Search Results - "BUCCHIGNANO, James J"

Two-Dimensional Pattern Formation Using Graphoepitaxy of PS‑b‑PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication by Tsai, Hsinyu, Pitera, Jed W, Miyazoe, Hiroyuki, Bangsaruntip, Sarunya, Engelmann, Sebastian U, Liu, Chi-Chun, Cheng, Joy Y, Bucchignano, James J, Klaus, David P, Joseph, Eric A, Sanders, Daniel P, Colburn, Matthew E, Guillorn, Michael A

“…Directed self-assembly (DSA) of lamellar phase block-co-polymers (BCPs) can be used to form nanoscale line-space patterns. However, exploiting the potential of…”
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High-Performance In0.7Ga0.3As-Channel MOSFETs With High-κ Gate Dielectrics and α-Si Passivation by YANNING SUN, KIEWRA, Edward W, DE SOUZA, Joel P, BUCCHIGNANO, James J, FOGEL, Keith E, SADANA, Devendra K, SHAHIDI, Ghavam G

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Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node by Ohuchi, K., Lavoie, C., Murray, C., D'Emic, C., Chu, J.O., Bin Yang, Besser, P., Gignac, L., Bruley, J., Singco, G.U., Pagette, F., Topol, A.W., Rooks, M.J., Bucchignano, J.J., Narayanan, V., Khare, M., Takayanagi, M., Ishimaru, K., Dae-Gyu Park, Shahidi, G., Solomon, P.

“…This paper shows ultra-low contact resistivities with standard NiPt silicide process that can reach below 10 -8 Omega-cm 2 for both n + and p + Si and…”
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Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme by Hsinyu Tsai, Miyazoe, Hiroyuki, Chang, Josephine B., Pitera, Jed, Chi-Chun Liu, Brink, Markus, Lauer, Isaac, Cheng, Joy Y., Engelmann, Sebastian, Rozen, John, Bucchignano, James J., Klaus, David P., Dawes, Simon, Gignac, Lynne, Breslin, Chris, Joseph, Eric A., Sanders, Daniel P., Colburn, Matthew E., Guillorn, Michael A.

“…In this work, we report electrical characterization FinFET devices with 29nm-pitch fins patterned using a technique called tone inverted grapho-epitaxy…”
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Extendibility of NiPt silicide to the 22-nm node CMOS technology by Ohuchi, K., Lavoie, C., Murray, C.E., D'Emic, C.P., Lauer, I., Chu, J.O., Bin Yang, Besser, P., Gignac, L.M., Bruley, J., Singco, G.U., Pagette, F., Topol, A.W., Rooks, M.J., Bucchignano, J.J., Narayanan, V., Khare, M., Takayanagi, M., Ishimaru, K., Dae-Gyu Park, Shahidi, G., Solomon, P.M.

“…This paper shows ultra-low contact resistivities with standard NiPt silicide process that can reach 1times10 -8 Omega-cm 2 for both n + and p + Si by using…”
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