Search Results - "BRINGANS, R. D"

From Printed Transistors to Printed Smart Systems by Street, R. A., Ng, T. N., Schwartz, D. E., Whiting, G. L., Lu, J. P., Bringans, R. D., Veres, J.

“…Printing as a manufacturing technique is a promising approach to fabricate low-cost, flexible, and large area electronics. Over the last two decades, a wide…”
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Reconstructions of GaAs(111) surfaces observed by scanning tunneling microscopy by BIEGELSEN, D. K, BRINGANS, R. D, NORTHRUP, J. E, SWARTZ, L.-E

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Symmetric arsenic dimers on the Si (100) surface by UHRBERG, R. I. G, BRINGANS, R. D, BACHRACH, R. Z, NORTHRUP, J. E

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Use of ZnSe as an interlayer for GaAs growth on Si by BRINGANS, R. D, BIEGELSEN, D. K, SWARTZ, L.-E, PONCE, F. A, TRAMONTANA, J. C

“…ZnSe has been used as an interlayer between Si substrates and GaAs layers in molecular beam epitaxial growth of GaAs on Si. It is found that thin GaAs layers…”
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Early stages of growth of GaAs on Si observed by scanning tunneling microscopy by BIEGELSEN, D. K, BRINGANS, R. D, NORTHRUP, J. E, SWARTZ, L. E

“…Using a system coupling molecular beam deposition, scanning tunneling microscopy, and Auger spectroscopy in a connected ultrahigh-vacuum environment, we have…”
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Arsenic-terminated Ge(111): an ideal 1×1 surface by BRINGANS, R. D, UHRBERG, R. I. G, BACHRACH, R. Z, NORTHRUP, J. E

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Formation of the interface between GaAs and Si: implications for GaAs-on-Si heteroepitaxy by BRINGANS, R. D, OLMSTEAD, M. A, UHRBERG, R. I. G, BACHRACH, R. Z

“…Results of photoemission core-level spectroscopy measurements for coverages of around one monolayer of As, Ga, and GaAs on Si substrates are presented. The…”
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GaAs epitaxy and heteroepitaxy: A scanning tunneling microscopy study by Biegelsen, D. K., Swartz, L.‐E., Bringans, R. D.

“…In this paper, we will compare and contrast scanning tunneling microscopy images of homoepitaxially grown GaAs(100) and heteroepitaxially grown Si(100):As and…”
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Misfit dislocations in ZnSe grown on vicinal Si(001) substrates by Romano, L. T., Knall, J., Bringans, R. D., Biegelsen, D. K.

“…High resolution electron microscopy (HREM) has been used to study misfit dislocations of ZnSe films grown on vicinal Si(001) substrates tilted 4° towards the…”
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Scanning Tunneling Microscopy Studies of Semiconductor Surface Passivation by Bringans, R. D., Biegelsen, D. K., J. E. Northrup, J. E. Northrup, L.-E. Swartz, L.-E. Swartz

“…Heteroepitaxial growth of compound semiconductors on Si surfaces is strongly affected by the bonding of the first atomic layer to the substrate. These effects,…”
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Photoemission study of the electronic structure of stoichiometric and substoichiometric TiN and ZrN by Höchst, H., Bringans, R. D., Steiner, P., Wolf, Th

“…The electronic structure of stoichiometric and substoichiometric titanium nitride (TiN) and zirconium nitride (ZrN) have been studied with ultraviolet and…”
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Electronic and atomic structure of GaAs epitaxial overlays on Si (111) by NORTHRUP, J. E, BRINGANS, R. D, UHRBERG, R. I. G, OLMSTEAD, M. A

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Low threshold, 633 nm, single tensile-strained quantum well Ga0.6In0.4P/(Al x Ga1− x )0.5In0.5P laser by Bour, D. P., Treat, D. W., Thornton, R. L., Paoli, T. L., Bringans, R. D., Krusor, B. S., Geels, R. S., Welch, D. F., Wang, T. Y.

“…Low threshold, 633 nm diode lasers are demonstrated. These devices contain a single, 80 Å, tensile-strained Ga0.6In0.4P quantum well (QW) active region, and…”
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Reflectance difference spectroscopy: Experiment and theory for the model system Si(001):As and application to Si(001) by Kipp, L, Biegelsen, DK, Northrup, JE, Swartz, L, Bringans, RD

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Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy by BIEGELSEN, D. K, BRINGANS, R. D, NORTHRUP, J. E, SWARTZ, L.-E

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Comparison between the Electronic Structures of GaAs(111) and GaAs ( 1 ― 1 ― 1 ― ) from Angle-Resolved Photoemission by Bringans, R. D., Bachrach, R. Z.

“…Angle-resolved photoemission spectra have been measured for the polar (111) and (111) surfaces of GaAs. The results show definitively that although both faces…”
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Photoemission resonance effects in the nitrides of titanium and zirconium by BRINGANS, R. D, HÖCHST, H

“…Photoemission measurements have been carried out on TiN, TiN sub 0.80 , ZrN and ZrN sub 0.82 in the photon energy range 15-150 eV. A resonant enhancement of…”
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Electronic and atomic structure of arsenic terminated Si(100) by Uhrberg, R. I. G., Bringans, R. D., Bachrach, R. Z., Northrup, John E.

“…A comparison between angle resolved photoemission data and a b i n i t i o pseudopotential calculations for a structural model of the As covered Si(100)…”
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Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface by UHRBERG, R. I. G, BRINGANS, R. D, OLMSTEAD, M. A, BACHRACH, R. Z, NORTHRUP, J. E

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Effect of interface chemistry on the growth of ZnSe on the Si(100) surface by BRINGANS, R. D, BIEGELSEN, D. K, SWARTZ, L.-E, PONCE, F. A, TRAMONTANA, J. C

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