Search Results - "BRIJS, B"

Influence of the electron mean free path on the resistivity of thin metal films by Zhang, W., Brongersma, S.H., Richard, O., Brijs, B., Palmans, R., Froyen, L., Maex, K.

“…In this paper, we discuss the influence of the electron mean free path on resistivity of thin metal films. The simulation results obtained by using…”
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High- k dielectrics for future generation memory devices (Invited Paper) by Kittl, J.A., Opsomer, K., Popovici, M., Menou, N., Kaczer, B., Wang, X.P., Adelmann, C., Pawlak, M.A., Tomida, K., Rothschild, A., Govoreanu, B., Degraeve, R., Schaekers, M., Zahid, M., Delabie, A., Meersschaut, J., Polspoel, W., Clima, S., Pourtois, G., Knaepen, W., Detavernier, C., Afanas’ev, V.V., Blomberg, T., Pierreux, D., Swerts, J., Fischer, P., Maes, J.W., Manger, D., Vandervorst, W., Conard, T., Franquet, A., Favia, P., Bender, H., Brijs, B., Van Elshocht, S., Jurczak, M., Van Houdt, J., Wouters, D.J.

“…The requirements and development of high- k dielectric films for application in storage cells of future generation flash and Dynamic Random Access Memory…”
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Deposition of HfO2 on germanium and the impact of surface pretreatments by Van Elshocht, S., Brijs, B., Caymax, M., Conard, T., Chiarella, T., De Gendt, S., De Jaeger, B., Kubicek, S., Meuris, M., Onsia, B., Richard, O., Teerlinck, I., Van Steenbergen, J., Zhao, C., Heyns, M.

“…The deposition behavior of HfO2 by metalorganic chemical vapor deposition on germanium has been investigated. HfO2 films can be deposited on Ge with equally…”
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Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions by Pawlak, B. J., Surdeanu, R., Colombeau, B., Smith, A. J., Cowern, N. E. B., Lindsay, R., Vandervorst, W., Brijs, B., Richard, O., Cristiano, F.

“…We investigate the thermal stability of boron-doped junctions formed by Ge preamorphization and solid phase epitaxial regrowth. Isochronal annealing and…”
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Ternary rare-earth metal oxide high- k layers on silicon oxide by Zhao, C., Witters, T., Brijs, B., Bender, H., Richard, O., Caymax, M., Heeg, T., Schubert, J., Afanas'ev, V. V., Stesmans, A., Schlom, D. G.

“…Ternary oxides, Gd Sc O 3 , Dy Sc O 3 , and La Sc O 3 , deposited by pulsed laser deposition using ceramics targets of stoichiometric composition, were studied…”
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Ion-implantation issues in the formation of shallow junctions in germanium by Simoen, E., Satta, A., D’Amore, A., Janssens, T., Clarysse, T., Martens, K., De Jaeger, B., Benedetti, A., Hoflijk, I., Brijs, B., Meuris, M., Vandervorst, W.

“…This paper provides an overview of the current state-of-the-art in the formation of shallow junctions in germanium by ion implantation, covering the issues of…”
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Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon by Pawlak, B. J., Janssens, T., Brijs, B., Vandervorst, W., Collart, E. J. H., Felch, S. B., Cowern, N. E. B.

“…We investigate the impact of amorphization and C co-implantation on B diffusion and activation properties after conventional spike rapid thermal annealing…”
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High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge by Souriau, L., Terzieva, V., Vandervorst, W., Clemente, F., Brijs, B., Moussa, A., Meuris, M., Loo, R., Caymax, M.

“…In the first part of this work, the fabrication of silicon germanium-on-insulator substrates (SGOI) by the Ge condensation technique was studied. Ge atomic…”
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Epitaxial NiMnSb films on GaAs(001) by Van Roy, W., De Boeck, J., Brijs, B., Borghs, G.

“…We show the growth of epitaxial NiMnSb(001) thin films, a half-metallic ferromagnet, on GaAs(001) by molecular-beam epitaxy. The Sb content of the films…”
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Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions by Vincent, B., Loo, R., Vandervorst, W., Delmotte, J., Douhard, B., Valev, V.K., Vanbel, M., Verbiest, T., Rip, J., Brijs, B., Conard, T., Claypool, C., Takeuchi, S., Zaima, S., Mitard, J., De Jaeger, B., Dekoster, J., Caymax, M.

“…► Impact of Si cap Ge passivation pn Ge pMOSFETs performances. ► Impact of RPCVD Si growth process conditions on Si crystallinity and Ge segregation. ► Offers…”
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Considerations about multiple and plural scattering in heavy-ion low-energy ERDA by Giangrandi, S., Arstila, K., Brijs, B., Sajavaara, T., Vantomme, A., Vandervorst, W.

“…Low-energy heavy-ion Elastic Recoil Detection Analysis (ERDA) is becoming a mature technique for high-resolution characterization of thin films, i.e. below 50…”
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Very low chemical disorder in epitaxial NiMnSb films on GaAs(111)B by Van Roy, W., Wójcik, M., Je̢dryka, E., Nadolski, S., Jalabert, D., Brijs, B., Borghs, G., De Boeck, J.

“…Single-crystalline NiMnSb(111) films with negligibly low defect levels have been grown epitaxially on GaAs(111)B using molecular beam epitaxy and characterized…”
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N 2 as carrier gas: an alternative to H 2 for enhanced epitaxy of Si, SiGe and SiGe:C by Meunier-Beillard, P, Caymax, M, Van Nieuwenhuysen, K, Doumen, G, Brijs, B, Hopstaken, M, Geenen, L, Vandervorst, W

“…Chemical vapor deposition (CVD) epitaxy at low temperature and high growth rate has always been difficult and is nowadays a challenge for the fabrication of…”
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Impact of the Ge concentration on the Ge-ionisation probability and the matrix sputter yield for a SiGe matrix under oxygen irradiation by Huyghebaert, C., Conard, T., Brijs, B., Vandervorst, W.

“…As SiGe becomes a building block of advanced devices, depth profiling of SiGe gains in importance, requiring an understanding of its basic behavior under…”
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Linewidth effect and phase control in Ni fully silicided gates by Kittl, J.A., Lauwers, A., Hoffmann, T., Veloso, A., Kubicek, S., Niwa, M., van Dal, M.J.H., Pawlak, M.A., Demeurisse, C., Vrancken, C., Brijs, B., Absil, P., Biesemans, S.

“…The scalability of Ni fully silicided (FUSI) gate processes to short gate lengths was studied for NiSi, Ni 2 Si, and Ni 31 Si 12 . It is shown that the control…”
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Errors in near-surface and interfacial profiling of boron and arsenic by Vandervorst, W, Janssens, T, Brijs, B, Conard, T, Huyghebaert, C, Frühauf, J, Bergmaier, A, Dollinger, G, Buyuklimanli, T, VandenBerg, J.A, Kimura, K

“…To get an insight in the diffusion behavior of dopants such as arsenic and boron after annealing and in particular their segregation characteristics towards…”
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Nucleation of atomic-layer-deposited HfO2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation by Green, M. L., Allen, A. J., Li, X., Wang, J., Ilavsky, J., Delabie, A., Puurunen, R. L., Brijs, B.

“…We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO2 films. The…”
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Observation of the interfacial layer in HfO2(10nm)/Si by high-resolution RBS in combination with grazing angle sputtering by Sakai, W., Nakajima, K., Suzuki, M., Kimura, K., Brijs, B.

“…A Si(001) wafer with a HfO2 layer of 10nm thickness prepared by atomic layer CVD, is irradiated by 1keV Xe+ ions at a grazing angle of 15°. The sample is…”
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The analysis of a thin SiO2/Si3N4/SiO2 stack: A comparative study of low-energy heavy ion elastic recoil detection, high-resolution Rutherford backscattering and secondary ion mass spectrometry by Brijs, B., Sajavaara, T., Giangrandi, S., Janssens, T., Conard, T., Arstila, K., Nakajima, K., Kimura, K., Bergmaier, A., Dollinger, G., Vantomme, A., Vandervorst, W.

“…The analysis of thin films in the range of 10nm and less has become very important in microelectronics. The goal of this article is an evaluation of low-energy…”
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Influence of Ti on CoSi2 nucleation by Detavernier, C., Van Meirhaeghe, R. L., Cardon, F., Maex, K., Vandervorst, W., Brijs, B.

“…Evidence is presented that impurities present in the precursor phase may influence the nucleation of a new phase. In case of the CoSi→CoSi2 transition, it is…”
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