Search Results - "BOZHKOV, V. G"

Electrochemical Deposition of Iridium onto Gallium Arsenide from a Sulfamate Electrolyte Based on Hexachloroiridic(IV) Acid by Bekezina, T. P., Vaisbekker, M. S., Burmistrova, V. A., Bozhkov, V. G.

“…The nature of cathodic polarization in an iridium-plating electrolyte based on a sulfamate solution of H 2 [IrCl 6 ] was studied. Spectroscopic analysis shows…”
Get full text

A Set of Receiving Equipment for Detection of Collective Thomson Scattering Spectra at the Gas-Dynamic Trap (GDT) Facility by Lubyako, L.V., Shalashov, A. G., Andriyanov, A. F., Bozhkov, V. G., Gospodchikov, E. D., Dorozhkina, D. S.

“…We describe the set of receiving equipment, which was designed for the experiments on detection of the Thomson collective scattering spectra of high-power…”
Get full text

AFM study of charging of the Au–n-GaAs contact by Shmargunov, A.V., Bozhkov, V.G., Novikov, V.A.

“…[Display omitted] •The effect of local changing of contact potential difference of Au–GaAs with charging is detected.•It is assumed that the CPD change is due…”
Get full text

A calibration system for microwave radiometers based on a modulator–calibrator by Krasilnikov, A. A., Kulikov, M. Yu, Ryskin, V. G., Fedoseev, L. I., Shvetsov, A. A., Bozhkov, V. G., Bol’shakov, O. S.

“…A system for automatic internal calibration of millimeter-range radiometers is described. This system is based on an electrically controlled…”
Get full text

Low-frequency noise in metal–semiconductor contacts with local barrier height lowering by Bozhkov, V.G., Vasiliev, O.V.

“…An analytical presentation and numerical analysis of low-frequency (1/f) noise of a spatially inhomogeneous Schottky barrier contact (SBC) (with local barrier…”
Get full text

Radiometer of the 3-mm wave range with a modulator-calibrator by Fedoseev, L. I., Bozhkov, V. G., Genneberg, V. A., Petrov, I. V., Shkaev, A. P.

“…We describe a radiometer intended for use in the spectroradiometric complex for remote sensing of the Earth's atmosphere. The main feature of the radiometer is…”
Get full text

Influence of the nonlinear bias dependence of the barrier height on measured Schottky-barrier contact parameters by Bozhkov, V. G., Shmargunov, A. V.

“…A numerical investigation of current-voltage characteristics (IVCs) of the metal-semiconductor Schottky-barrier contact (SBC) considering the influence of…”
Get full text

Development of terahertz mixers and a study of their characteristics by Bozhkov, V. G., Genneberg, V. A., Kuzyakov, D. Yu, Kurkan, K. I., Fedoseev, L. I.

“…We develop terahertz mixers with monolithic integrated circuits containing balanced, series and antiparallel pairs of Schottky diodes. The designs of these…”
Get full text

Designing 1.5-and 2-mm waveband radio spectrometers with optimized performance for atmospheric research by Rozanov, S. B., Sobel’man, I. I., Bozhkov, V. G., Esepkina, N. A., Ignat’ev, A. N., Kropotkina, E. P., Kruglov, S. K., Nikiforov, P. L., Perfil’ev, V. I., Pirogov, Yu. A., Saenko, I. I., Solomonov, S. V., Turygin, S. Yu, Shtanyuk, A. M.

“…Performance of 142-and 204-GHz radio spectrometers is optimized for remote sensing of ozone and chlorine monoxide in the Earth's atmosphere by means of…”
Get full text

Fractal nature of resitance of the drain-dopped channel of the GaN-based heterostructure of the field effect transistor with bidimensional electron gas by Torkhov, N A, Bozhkov, V G

“…It is shown that the specific resistivity of ρ 2D-channel of the drain-dropped HEMT-transistor based on GaN heterostructure in local approximation depends on…”
Get full text

Electron drift velocity in PHEMT by Ayzenshtat, G I, Bozhkov, V G, Yushchenko, A Y

“…The temperature dependence of drift velocity-field characteristics of two-dimensional electron gas in AlGaAs/InGaAs Pseudomorphic High Electron Mobility…”
Get full text

Fractal character of the distribution of surface potential irregularities in epitaxial n-GaAs (100) by Torkhov, N. A., Bozhkov, V. G.

“…The fractal geometric properties of the relief of the surface potential of a heavily doped n + -GaAs (100) wafer are studied by Kelvin’s method of atomic force…”
Get full text

Impact exerted by fractal pattern of ionized shallow-level donor impurity distribution on specific resistance of active layer of structure of field-effect transistor by Torkhov, N A, Bozhkov, V G, Zhuravlev, K S, Toropov, A I

“…It has been found that dependence of specific resistance ρ of the active GaAs layer in Schottky-barrier of structures of the field-effect transistor on width d…”
Get full text

Modified operating regime of gallium arsenide Gunn diodes with thin base by Torkhov, N A, Bozhkov, V G, Kozlova, A V, Samoilov, V I

“…Modified operating conditions of Gunn diode, SHF value of which on the first harmonic is determined by pumping processes in the charge layer and its diffusion,…”
Get full text

Fractal mode of distribution of surface potential of gate layer in gallium arsenide structure of field-effect transistor by Torkhov, N A, Bozhkov, V G, Novikov, V A, Ivonin, I V

“…On account of fractal nature (D f =2.62) of the gate layer of FET, instrumental characteristics, when length and width of the gate are reduced, will change…”
Get full text

Heterostructure P-I-N diodes by Ayzenshtat, G I, Bozhkov, V G, Yushchenko, A Y, Monastirev, E A

“…Heterostructure microwave beam lead p-i-n diodes are developed. Parameters of diodes were measured in a frequency range from 0.1 to 40 GHz. Insertion loss does…”
Get full text

Submillimeter-wave receiver with a balanced monolithic mixer by Bozhkov, V. G., Genneberg, V. A., Dryagin, Yu. A., Fedoseev, L. I.

“…We describe the design of a superheterodyne receiver with a balanced monolithic integrated mixer and describe the technique and results of parameter…”
Get full text

Semiconductor Detectors, Mixers, and Frequency Multipliers for the Terahertz Band by Bozhkov, V. G.

Get full text

Monolithic integrated circuit of limiters on basis of P-I-N diodes by Yushchenko, A Y, Monastyrev, E A, Ayzenshtat, G I, Bozhkov, V G, Akimov, A V

“…The paper presents the design and performance of broadband monolithic GaAs p-i-n diode limiter. MIC has low-signal insertion loss. The leakage power of the…”
Get full text

Transient Processes in the GaAs-Based Microwave-PIN-Diodes by Ayzenshtat, G. I., Yushchenko, А. Yu, Bozhkov, V. G.

“…The results of studies of transient characteristics of microwave-pin-diodes based on gallium arsenide are presented. It is shown that in these diodes, a…”
Get full text