Search Results - "BOUGRIOUA, Z"

Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers by Benzarti, Z., Sekrafi, T., Khalfallah, A., Bougrioua, Z., Vignaud, D., Evaristo, M., Cavaleiro, A.

“…•N-polar InN epilayers grown by PA-MBE on GaN/AlN/Al2O3(0001).•Growth temperature effect on physical and mechanical features was analysed.•Optimal growth…”
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Epitaxial orientation of III-nitrides grown on R-plane sapphire by metal-organic-vapor-phase epitaxy by Vennéguès, P., Bougrioua, Z.

“…The absolute epitaxial relationships between III-nitride films and R-plane sapphire are investigated using convergent beam electron diffraction. The resulting…”
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Magnesium diffusion profile in GaN grown by MOVPE by Benzarti, Z., Halidou, I., Bougrioua, Z., Boufaden, T., El Jani, B.

“…The diffusion of magnesium has been studied in GaN layers grown on sapphire substrate by atmospheric pressure metalorganic vapor-phase-epitaxy (MOVPE) in a…”
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Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns by Bougrioua, Z., Gibart, P., Calleja, E., Jahn, U., Trampert, A., Ristic, J., Utrera, M., Nataf, G.

“…Dislocation-free and strain-free GaN nanopillars, grown on Si by molecular beam epitaxy, were used as nanoseeds for a new form of epitaxial lateral overgrowth…”
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Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE by Bougrioua, Z., Azize, M., Lorenzini, P., Laügt, M., Haas, H.

“…Strategies for maintaining a low threading dislocation density in highly resistive GaN layers grown by MOVPE on sapphire or SiC substrates using Fe modulation…”
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Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates by Azize, M., Bougrioua, Z., Gibart, P.

“…AlGaN/GaN high-electron mobility transistors (HEMTs) structures regrown by metalorganic vapour phase epitaxy (MOVPE) on semi-insulating (SI) GaN templates,…”
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Comparison of Fe and Si doping of GaN: An EXAFS and Raman study by Katsikini, M., Pinakidou, F., Arvanitidis, J., Paloura, E.C., Ves, S., Komninou, Ph, Bougrioua, Z., Iliopoulos, E., Moustakas, T.D.

“…The effect of Fe and Si doping in GaN grown epitaxially on Al 2O 3 is studied using Extended X-ray Absorption Fine Structure (EXAFS) and Raman spectroscopies…”
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Reduction of stacking faults in (11$ bar 2 $0) and (11$ bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission by Bougrioua, Z., Laügt, M., Vennéguès, P., Cestier, I., Gühne, T., Frayssinet, E., Gibart, P., Leroux, M.

“…New conditions for one‐step ELO were implemented to grow coalesced (11$ \bar 2 $0) non‐polar and (11$ \bar 2 $2) semi‐polar GaN layers starting, respectively,…”
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Electrical behaviour of lateral Al/n-GaN/Al structures by Horváth, Zs. J., Dobos, L., Beaumont, B., Bougrioua, Z., Pécz, B.

“…The electrical behaviour of lateral Al/n-GaN/Al structures has been studied by current–voltage measurements between a large pad with an area of 22 mm 2 and…”
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Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures by Cordier, Y., Azize, M., Baron, N., Bougrioua, Z., Chenot, S., Tottereau, O., Massies, J., Gibart, P.

“…The regrowth of AlGaN/GaN high electron mobility transistor (HEMT) structures on semi-insulating (SI) GaN templates, after exposure to air, results in the…”
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The microstructure of Ti/Au contacts on n-type GaN annealed in nitrogen by Dobos, L., Tóth, L., Pécz, B., Horváth, Z.E., Tóth, A.L., Beaumont, B., Bougrioua, Z.

“…Ti(40nm)/Au(120nm) contacts have been prepared on n-GaN/sapphire. The contacts were annealed from 400°C to 900°C for 10min in nitrogen, respectively. The…”
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Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001) by Marchand, H., Desjardins, P., Guillon, S., Paultre, J.-E., Bougrioua, Z., Yip, R. Y.-F., Masut, R. A.

“…The metalorganic vapor phase epitaxy of coherent self-assembled InAs islands on InP(001) is demonstrated. Samples are characterized using transmission electron…”
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Improved AlGaN/GaN high electron mobility transistor using AlN interlayers by Jiménez, A., Bougrioua, Z., Tirado, J. M., Braña, A. F., Calleja, E., Muñoz, E., Moerman, I.

“…This work reports on the effects of AlN interlayers embedded into the GaN semi-insulating buffer of AlGaN/GaN high electron mobility transistors, in comparison…”
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Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN ∕ GaN heterostructures by Lorenzini, P., Bougrioua, Z., Tiberj, A., Tauk, R., Azize, M., Sakowicz, M., Karpierz, K., Knap, W.

“…The transport and quantum lifetimes were respectively deduced from low-temperature mobility and Shubnikov-de Haas measurements as a function of carrier density…”
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Metal contacts to n-GaN by Dobos, L., Pécz, B., Tóth, L., Horváth, Zs.J., Horváth, Z.E., Tóth, A., Horváth, E., Beaumont, B., Bougrioua, Z.

“…Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 deg C. The structure, phase and morphology were studied by cross-sectional…”
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Bilayer Cr/Au contacts on n-GaN by Dobos, L., Tóth, L., Pécz, B., Horváth, Zs.J., Horváth, Z.E., Tóth, A.L., Beaumont, B., Bougrioua, Z.

“…Cr/Au (40/65 nm) metal layers have been deposited by thermal evaporation onto n-GaN epitaxial layers grown by metal-organic chemical-vapour deposition (MOCVD)…”
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Al and Ti/Al contacts on n-GaN by Dobos, L., Pécz, B., Tóth, L., Horváth, Zs.J., Horváth, Z.E., Horváth, E., Tóth, A., Beaumont, B., Bougrioua, Z.

“…Al(60 nm) and Ti(40 nm)/Al(160 nm) metal layers have been deposited by thermal evaporation onto n-GaN epitaxial layers grown by metal organic chemical vapour…”
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Understanding the influence of physical properties on the mechanical characteristics of Mg-doped GaN thin films by Benzarti, Z., Khalfallah, A., Bougrioua, Z., Evaristo, M., Cavaleiro, A.

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Electrical conductivity improvement of Fe doped ZnO nanopowders by Saadi, H., Rhouma, F.I.H., Benzarti, Z., Bougrioua, Z., Guermazi, S., Khirouni, K.

“…[Display omitted] •Fe doped ZnO nanopowders with different doping concentrations were synthesized by the chemical co-precipitation method.•XRD study revealed…”
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Mosaicity and stress effects on luminescence properties of GaN by Toure, A., Bchetnia, A., Lafford, T. A., Benzarti, Z., Halidou, I., Bougrioua, Z., Jani, B. El

“…High‐resolution X‐ray diffraction (HRXRD) of several GaN layers grown on Si/N treated c ‐plane sapphire substrate by metal‐organic chemical vapour phase…”
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