Search Results - "BONCHYK, O. Yu"

TEM studies of structural defects in HgTe/HgCdTe quantum wells by Bonchyk, O. Yu, Savytskyy, H. V., Swiatek, Z., Morgiel, Y., Izhnin, I. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Fitsych, O. I., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Yakushev, M. V.

“…Bright-field and high-resolution transmission electron microscopy and microdiffraction have been used for the study of defects in two HgTe/HgCdTe single…”
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Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films by Izhnin, I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Swiatek, Z., Morgiel, J., Fitsych, O. I., Varavin, V. S., Marin, D. V., Yakushev, M. V., Bonchyk, O. Yu, Savytskyy, H. V.

“…Bright–field and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic…”
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Laser Formation of Periodic Micro- and Nanostructures on the Surface of Monocrystalline Silicon by Mohylyak, I. A., Bonchyk, O. Yu, Korniy, S. A., Kiyak, S. G., Popovych, D. I.

“…Experimental studies of the features of the formation of laser-induced periodic nanostructures on the surface of silicon wafers in the zones of action of…”
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Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study by Bonchyk, O. Yu, Savytskyy, H. V., Swiatek, Z., Morgiel, Y., Izhnin, I. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Fitsych, O. I., Varavin, V. S., Dvoretsky, S. A., Marin, D. V., Yakushev, M. V.

“…Radiation damage and its transformation under annealing were studied with bright-field and high-resolution transmission electron microscopy for…”
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Peculiarities of Morphology Formation of Silicon Surface under the Action of Laser Pulses by Bonchyk, O.Yu, Kiyak, S.G., Mohylyak, I.A., Popovych, D.I.

“…The experimental studies of geometry features of silicon layers in areas of second and millisecond laser pulses were carried out. The results of microscopic…”
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Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE by Izhnin, I. I., Fitsych, O. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Kurbanov, K. R., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Remesnik, V. G., Yakushev, M. V., Bonchyk, O. Yu, Savytskyy, H. V., Świątek, Z., Morgiel, J.

“…By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam epitaxy, and comparing the obtained data with the results…”
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Properties and structural-phase state of the surface layers of titanium after combined nitriding by Yas'kiv, O I, Pohrelyuk, I M, Fedirko, V M, Bonchyk, O Yu, Kravchyshyn, T M

“…We study the simultaneous nitriding of titanium alloys by two methods: thermodiffusion saturation and ion implantation. Prior to nitrogen implantation, a thin…”
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Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing by Korotaev, A.G., Izhnin, I.I., Mynbaev, K.D., Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Bonchyk, O.Yu, Savytskyy, H.V., Swiatek, Z., Morgiel, J.

“…Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation and thermal annealing are reported on. A…”
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Direct comparison of the results of arsenic ion implantation in n– and p–type Hg0.8Cd0.2Te by Izhnin, I.I., Mynbaev, K.D., Swiatek, Z., Morgiel, J., Voitsekhovskii, A.V., Korotaev, A.G., Varavin, V.S., Dvoretsky, S.A., Marin, D.V., Yakushev, M.V., Fitsych, O.I., Bonchyk, O.Yu, Savytskyy, H.V.

“…•n- and p-type samples were fabricated from a HgCdTe epitaxial film.•Both samples were implanted with arsenic in the same implantation cycle.•Optical…”
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Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis by Izhnin, I.I., Mynbaev, K.D., Voitsekhovsky, A.V., Korotaev, A.G., Syvorotka, I.I., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Remesnik, V.G., Yakushev, M.V., Swiatek, Z., Morgiel, J., Bonchyk, O.Yu, Savytskyy, H.V.

“…•HgCdTe film with p-type conductivity was implanted with arsenic.•Profiling of electrical parameters was performed after the implantation.•Discrete mobility…”
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Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy by Bonchyk, O. Yu, Savytskyy, H. V., Izhnin, I. I., Mynbaev, K. D., Syvorotka, I. I., Korotaev, A. G., Voitsekhovskii, A. V., Fitsych, O. I., Varavin, V. S., Marin, D. V., Mikhailov, N. N., Yakushev, M. V., Swiatek, Z., Morgiel, J., Jakiela, R.

“…Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced by implantation of arsenic ions…”
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Effect of stresses on the diffusion of impurities in the process of laser solid-phase alloying of silicon by Bonchyk, O. Yu, Kyyak, S. H., Pokhmurs’ka, H. V., Fl’orko, O. V., Chekurin, V. F.

“…We describe some results of experimental and theoretical investigations of diffusion of impurities into single-crystal silicon wafers under the action of laser…”
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Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions by Fodchuk, I.M.

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Reconstruction of lattice structure of ion-implanted near-surface regions of Hg1-xCdxTe epitaxial layers by VLASOV, A. P, BONCHYK, O. Yu, KIYAK, S. G, FODCHUK, I. M, ZAPLITNYY, R. M, KAZEMIRSKIY, T, BARCZ, A, ZIEBA, P. S, SWIATEK, Z, MAZIARZ, W

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The effect of built-in electric field on As diffusion in HgCdTe graded-band-gap epitaxial layers by Vlasov, A.P, Sokolovskii, B.S, Monastyrskii, L.S, Bonchyk, O.Yu, Barcz, A

“…Experiments have been carried out on As diffusion in graded-band-gap HgCdTe epitaxial layers grown by isothermal vapor-phase epitaxy (ISOVPE). For studying As…”
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Solid state doping of CdxHg1-xTe epitaxial layers with elements of V group by Vlasov, A.P.

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