Search Results - "BOGGESS, T. F"

Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices by Murray, L.M., Lokovic, K.S., Olson, B.V., Yildirim, A., Boggess, T.F., Prineas, J.P.

“…InAs/GaSb superlattice samples have been grown with variations in interface design and growth rates of InAs and GaSb. Time resolved photoluminescence…”
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Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux by Koerperick, E.J., Murray, L.M., Norton, D.T., Boggess, T.F., Prineas, J.P.

“…Growth optimization of unintentionally doped GaSb buffer layers on (1 0 0) GaSb substrates by molecular beam epitaxy is reported. Several growth parameters…”
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Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice by Olson, B. V., Shaner, E. A., Kim, J. K., Klem, J. F., Hawkins, S. D., Murray, L. M., Prineas, J. P., Flatté, M. E., Boggess, T. F.

“…Measurements of carrier recombination rates using time-resolved differential transmission are reported for an unintentionally doped mid-wave infrared InAsSb…”
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Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices by Aytac, Y., Olson, B. V., Kim, J. K., Shaner, E. A., Hawkins, S. D., Klem, J. F., Flatté, M. E., Boggess, T. F.

“…Measurements of carrier recombination rates using a time-resolved pump-probe technique are reported for mid-wave infrared InAs/InAs1−xSbx type-2 superlattices…”
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All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices by Olson, B. V., Murray, L. M., Prineas, J. P., Flatté, M. E., Olesberg, J. T., Boggess, T. F.

“…Time-resolved differential transmission measurements were used to investigate vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II…”
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GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 μm device applications by Calvez, S., Hopkins, J.-M., Smith, S.A., Clark, A.H., Macaluso, R., Sun, H.D., Dawson, M.D., Jouhti, T., Pessa, M., Gundogdu, K., Hall, K.C., Boggess, T.F.

“…We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical…”
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Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon by Muhowski, A.J., Bogh, C.L., Heise, R.L., Boggess, T.F., Prineas, J.P.

“…•Optical output of mid-infrared superlattice LEDs improved on silicon substrates.•Mid-IR SLEDs on Si perform better due to improved thermal management.•Mid-IR…”
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Simultaneous measurement of the two-photon coefficient and free-carrier cross section above the bandgap of crystalline silicon by Boggess, T., Bohnert, K., Mansour, K., Moss, S., Boyd, I., Smirl, A.

“…We report what is to our knowledge the first simultaneous measurement of the two-photon absorption coefficient and the free-carrier cross section above the…”
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Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells by Hall, K. C., Gündoğdu, K., Hicks, J. L., Kocbay, A. N., Flatté, M. E., Boggess, T. F., Holabird, K., Hunter, A., Chow, D. H., Zinck, J. J.

“…We report the demonstration of room temperature gate control over the electron spin dynamics using the Rashba effect in a (110) InAs ∕ AlSb two-dimensional…”
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n-type anode layer, high-power MWIR superlattice LED by Muhowski, A. J., Ricker, R. J., Boggess, T. F., Prineas, J. P.

“…Cascaded superlattice LEDs were designed, grown, fabricated, and tested with an n-type anode structure consisting of a variably doped n-GaSb buffer layer and a…”
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Optical limiting in GaAs by Boggess, T., Smirl, A., Moss, S., Boyd, I., Van Stryland, E.

“…We have used two-photon absorption, self-defocusing, and optically-induced melting in GaAs to limit 1 μm picosecond pulsed radiation. The contribution to the…”
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Bias-dependent spin relaxation in a [ 1 1 0 ] -InAs/AlSb 2DES by Hicks, J., Gündoğdu, K., Kocbay, A.N., Hall, K.C., Boggess, T.F., Holabird, K., Hunter, A., Zinck, J.J.

“…Manipulation of electron spin is a critical component of many proposed semiconductor spintronic devices. One promising approach utilizes the Rashba effect by…”
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Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys by Olson, B. V., Shaner, E. A., Kim, J. K., Klem, J. F., Hawkins, S. D., Flatté, M. E., Boggess, T. F.

“…Minority carrier lifetimes in doped and undoped mid-wave infrared InAs/InAsSb type-II superlattices (T2SLs) and InAsSb alloys were measured from 77–300 K. The…”
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Resonant tunneling in (110) oriented interband diodes by Zinck, J. J., Chow, D. H., Holabird, K. S., Schulman, J. N., Hall, K. C., Boggess, T. F.

“…Growth of high-quality Sb-based resonant tunneling diodes in the (110) orientation is demonstrated. The room-temperature current-voltage characteristics of the…”
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Picosecond transient orientational and concentration gratings in germanium by Smirl, A., Boggess, T., Wherrett, B., Perryman, G., Miller, A.

“…We present and discuss the results of picosecond transient grating self-diffraction measurements in germanium that can be understood in terms of an…”
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Femtosecond pulse generation in the red/deep red spectral region by Dawson, M., Boggess, T., Garvey, D., Smirl, A.

“…Optical pulses as short as 55 fs in duration have been generated near 675 nm in a synchronously pumped, hybridly mode-locked, sulforhodamine 101 dye laser…”
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Tunable near-infrared picosecond pulses from a short-cavity dye laser by Bohnert, K., Boggess, T., Mansour, K., Maxson, D., Smirl, A.

“…We report on the generation of tunable infrared picosecond pulses by a short-cavity dye laser system consisting of a short cavity, a three-stage amplifier, and…”
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Picosecond photorefractive and free-carrier transient energy transfer in GaAs at 1 mu m by Smirl, A.L., Valley, G.C., Bohnert, K.M., Boggess, T.F.

“…The strength, formation, and decay of photorefractive and free-carrier gratings written in GaAs by 43-ps pulses at a wavelength of 1 mu m are investigated…”
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High-Power MWIR Cascaded InAs-GaSb Superlattice LEDs by Koerperick, E.J., Olesberg, J.T., Hicks, J.L., Prineas, J.P., Boggess, T.F.

“…Midwave IR LEDs operating at 3.8 mum with output powers approaching 25 mW at 77 K are reported. Devices based on the InAs-GaSb superlattice material system…”
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High-Power MWIR Cascaded InAsaGaSb Superlattice LEDs by Koerperick, E J, Olesberg, J T, Hicks, J L, Prineas, J P, Boggess, T F

“…Midwave IR LEDs operating at 3.8 mum with output powers approaching 25 mW at 77 K are reported. Devices based on the InAs-GaSb superlattice material system…”
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