Search Results - "BETHGE, O"

Improving the ALD-grown Y2O3/Ge interface quality by surface and annealing treatments by Zimmermann, C., Bethge, O., Winkler, K., Lutzer, B., Bertagnolli, E.

“…•Investigation of interfacial mechanisms for hydrofluoric and thermal pre-treated Ge-surfaces.•Improvement of interface trap density due to proper annealing…”
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ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell by Bethge, O., Nobile, M., Abermann, S., Glaser, M., Bertagnolli, E.

“…Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al2O3, ZrO2, Y2O3, and La2O3…”
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Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability by Capriotti, M., Alexewicz, A., Fleury, C., Gavagnin, M., Bethge, O., Visalli, D., Derluyn, J., Wanzenböck, H. D., Bertagnolli, E., Pogany, D., Strasser, G.

“…Using a generalized extraction method, the fixed charge density Nint at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated…”
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Quality assurance in CT: implementation of the updated national diagnostic reference levels using an automated CT dose monitoring system by Appel, E., Kröpil, P., Bethge, O.T., Aissa, J., Thomas, C., Antoch, G., Boos, J.

“…To evaluate the implementation of the updated computed tomography (CT) diagnostic reference levels (DRLs) from the German Federal Office for Radiation…”
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Dose Monitoring in Radiology Departments: Status Quo and Future Perspectives by Boos, J, Meineke, A, Bethge, O T, Antoch, G, Kröpil, P

“…The number of computed tomography examinations has continuously increased over the last decades and accounts for a major part of the collective radiation dose…”
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Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness by Abermann, S., Bethge, O., Henkel, C., Bertagnolli, E.

“…We investigate ultrathin ZrO2/La2O3 high-k dielectric stacks on germanium grown by atomic layer deposition. La2O3 is deposited from…”
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Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric by Bethge, O., Henkel, C., Abermann, S., Pozzovivo, G., Stoeger-Pollach, M., Werner, W.S.M., Smoliner, J., Bertagnolli, E.

“…► Comparative XPS analysis of the chemical stability of La2O3 and GeO2 Ge surface passivation during ALD of ZrO2. ► Comparative electrical characterization of…”
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Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates by Alexewicz, A., Ostermaier, C., Henkel, C., Bethge, O., Carlin, J.-F., Lugani, L., Grandjean, N., Bertagnolli, E., Pogany, D., Strasser, G.

“…We present enhancement-mode GaN high electron mobility transistors on Si substrates with ZrO2 gate dielectrics of thicknesses tox between 10 and 24nm. The…”
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Ge p-MOSFETs With Scaled ALD La2O3/ZrO2 Gate Dielectrics by HENKEL, C, ABERMANN, S, BETHGE, O, POZZOVIVO, G, KLANG, P, REICHE, M, BERTAGNOLLI, E

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Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium by ABERMANN, S, HENKEL, C, BETHGE, O, POZZOVIVO, G, KLANG, P, BERTAGNOLLI, E

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Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors by Bethge, O., Abermann, S., Henkel, C., Straif, C. J., Hutter, H., Smoliner, J., Bertagnolli, E.

“…ZrO 2 / GeO 2 dielectrics are grown on germanium substrates by Atomic Layer Deposition (ALD) at substrate temperatures of 150, 200, and 250 °C, respectively…”
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Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics by Henkel, C., Abermann, S., Bethge, O., Pozzovivo, G., Klang, P., Stöger-Pollach, M., Bertagnolli, E.

“…Schottky barrier SOI-MOSFETs incorporating a La2O3/ZrO2 high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor…”
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Artificial cilia of magnetically tagged polymer nanowires for biomimetic mechanosensing by Schroeder, P, Schotter, J, Shoshi, A, Eggeling, M, Bethge, O, Hütten, A, Brückl, H

“…Polymeric nanowires of polypyrrole have been implemented as artificial cilia on giant-magneto-resistive multilayer sensors for a biomimetic sensing approach…”
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Ge p-MOSFETs With Scaled ALD \hbox \hbox/\hbox Gate Dielectrics by Henkel, C, Abermann, S, Bethge, O, Pozzovivo, G, Klang, P, Reiche, M, Bertagnolli, E

“…Dielectric thin films of La 2 O 3 /ZrO 2 deposited by atomic layer deposition (ALD) are investigated to be employed in Ge Schottky barrier p-MOSFETs. La 2 O 3…”
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Geometry effects and frequency dependence in scanning capacitance microscopy on GaAs Schottky and metal–oxide–semiconductor-Type junctions by Eckhardt, C., Brezna, W., Silvano, J., Bethge, O., Bertagnolli, E., Smoliner, J.

“…In this work, the influence of the tip-geometry and an unusual low frequency behavior in scanning capacitance microscopy is investigated experimentally and…”
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Improving the ALD-grown Y 2 O 3 /Ge interface quality by surface and annealing treatments by Zimmermann, C., Bethge, O., Winkler, K., Lutzer, B., Bertagnolli, E.

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Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors by Capriotti, M., Bahat Treidel, E., Fleury, C., Bethge, O., Ostermaier, C., Rigato, M., Lancaster, S.L.C., Brunner, F., Detz, H., Hilt, O., Würfl, J., Pogany, D., Strasser, G.

“…We perform a comprehensive electrical transport and physical characterization of metal oxide semiconductor heterostructure field effect transistors with ZrO2…”
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Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al{sub 2}O{sub 3} in AlGaN/GaN high electron mobility transistors with normally off capability by Capriotti, M., Alexewicz, A., Fleury, C., Gavagnin, M., Bethge, O., Wanzenböck, H. D., Bertagnolli, E., Pogany, D., Strasser, G., Visalli, D., Derluyn, J.

“…Using a generalized extraction method, the fixed charge density N{sub int} at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is…”
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Atomic layer deposition of ZrO 2 / La 2 O 3 high- k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness by Abermann, S., Bethge, O., Henkel, C., Bertagnolli, E.

“…We investigate ultrathin ZrO 2 / La 2 O 3 high- k dielectric stacks on germanium grown by atomic layer deposition. La 2 O 3 is deposited from tris( N , N ′…”
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Low spin current-driven dynamic excitations and metastabilityin spin-valve nanocontacts with unpinned artificial antiferromagnet by Eggeling, M., Dimopoulos, T., Uhrmann, T., Bethge, O., Heer, R., Höink, V., Brückl, H.

“…This work investigates the spin-torque-related dynamics of nonuniform magnetic vortexlike states in spin-valve nanocontacts, employing an unpinned artificial…”
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