Search Results - "BERGMAIER, A"

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  1. 1

    A position sensitive time of flight detector for heavy ion ERD by Eschbaumer, S., Bergmaier, A., Dollinger, G.

    “…A new 2D position sensitive time of flight detector for heavy ion ERD has been developed. The detector features separate time and position measurement in a…”
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    Journal Article
  2. 2

    Growth sector dependence and mechanism of stress formation in epitaxial diamond growth by Fischer, M., Gsell, S., Schreck, M., Bergmaier, A.

    Published in Applied physics letters (23-01-2012)
    “…Stress generation in epitaxial diamond growth was investigated by μ -Raman spectroscopy and high resolution x-ray diffraction. Intrinsic stress could be varied…”
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    Journal Article
  3. 3

    Hydrogen analysis depth calibration by CORTEO Monte-Carlo simulation by Moser, M., Reichart, P., Bergmaier, A., Greubel, C., Schiettekatte, F., Dollinger, G.

    “…Hydrogen imaging with sub-μm lateral resolution and sub-ppm sensitivity has become possible with coincident proton–proton (pp) scattering analysis (Reichart et…”
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    Journal Article
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    The live cell irradiation and observation setup at SNAKE by Hable, V., Greubel, C., Bergmaier, A., Reichart, P., Hauptner, A., Krücken, R., Strickfaden, H., Dietzel, S., Cremer, T., Drexler, G.A., Friedl, A.A., Dollinger, G.

    “…We describe a new setup at the ion microprobe SNAKE ( Superconducting Nanoscope for Applied nuclear ( Kern-) physics Experiments) at the Munich 14 MV Tandem…”
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    Journal Article
  6. 6

    Transport behaviour of boron delta-doped diamond by Scharpf, J., Denisenko, A., Pakes, C. I., Rubanov, S., Bergmaier, A., Dollinger, G., Pietzka, C., Kohn, E.

    “…The electrical transport properties of two‐dimensional (2D) boron‐doped delta layers were investigated by a comprehensive analysis of physical, electrochemical…”
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    Journal Article
  7. 7

    Superhard nc-TiN/a-BN and nc-TiN/a-TiBx/a-BN coatings prepared by plasma CVD and PVD: a comparative study of their properties by Karvankova, P, Veprek-Heijman, M.G.J, Zindulka, O, Bergmaier, A, Veprek, S

    Published in Surface & coatings technology (30-01-2003)
    “…We present a comparative study of the preparation and properties of superhard ‘Ti–B–N’ coatings deposited by plasma CVD and by Vacuum Arc Evaporation (PVD) of…”
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    Journal Article
  8. 8

    Determination of molecular stopping cross section of 12C, 16O, 28Si, 35Cl, 58Ni, 79Br, and 127I in silicon nitride by Barradas, N.P., Bergmaier, A., Mizohata, K., Msimanga, M., Räisänen, J., Sajavaara, T., Simon, A.

    “…Silicon nitride is a technologically important material in a range of applications due to a combination of important properties. Ion beam analysis techniques,…”
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    Journal Article
  9. 9

    Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films by Angerer, H., Brunner, D., Freudenberg, F., Ambacher, O., Stutzmann, M., Höpler, R., Metzger, T., Born, E., Dollinger, G., Bergmaier, A., Karsch, S., Körner, H.-J.

    Published in Applied physics letters (15-09-1997)
    “…Al x Ga 1−x N alloys were grown on c-plane sapphire by plasma-induced molecular beam epitaxy. The Al content x was varied over the whole composition range…”
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    Journal Article
  10. 10

    Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy by Hermann, M., Furtmayr, F., Bergmaier, A., Dollinger, G., Stutzmann, M., Eickhoff, M.

    Published in Applied physics letters (09-05-2005)
    “…We have studied the influence of the growth conditions on the Si incorporation in AlN films grown by plasma-assisted molecular-beam epitaxy. Nitrogen-rich…”
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    Journal Article
  11. 11

    Characteristics of boron δ-doped diamond for electronic applications by El-Hajj, H., Denisenko, A., Bergmaier, A., Dollinger, G., Kubovic, M., Kohn, E.

    Published in Diamond and related materials (01-04-2008)
    “…Boron delta-doped profiles with peak concentrations above the full activation limit have been grown on (100)-oriented single crystal diamond substrates by…”
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    Journal Article Conference Proceeding
  12. 12

    Diamond field effect transistors—concepts and challenges by Aleksov, A., Kubovic, M., Kaeb, N., Spitzberg, U., Bergmaier, A., Dollinger, G., Bauer, Th, Schreck, M., Stritzker, B., Kohn, E.

    Published in Diamond and related materials (01-03-2003)
    “…Field effect transistors (FETs) in diamond should outperform FET structures on other wide bandgap materials like SiC and GaN in high power/high temperature…”
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    Journal Article Conference Proceeding
  13. 13

    Nanosecond pulsed proton microbeam by Dollinger, G., Bergmaier, A., Hable, V., Hertenberger, R., Greubel, C., Hauptner, A., Reichart, P.

    “…We show the preparation of a pulsed 20 MeV proton beam at the Munich tandem accelerator which offers a fluence of more than 1 × 10 9 protons/cm 2 being…”
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    Journal Article
  14. 14

    Heavy ion irradiation of U–Mo/Al dispersion fuel by Wieschalla, N., Bergmaier, A., Böni, P., Böning, K., Dollinger, G., Großmann, R., Petry, W., Röhrmoser, A., Schneider, J.

    Published in Journal of nuclear materials (15-10-2006)
    “…The usage of high-density U–Mo/Al dispersion fuel for high burn up in research and test reactors seems to be limited by the unfavourable interdiffusion layer…”
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    Journal Article
  15. 15

    High resolution elastic recoil detection by Dollinger, G., Bergmaier, A., Goergens, L., Neumaier, P., Vandervorst, W., Jakschik, S.

    “…The quantitative analysis of light elements in ultra thin films being thinner than 10 nm is still a nontrivial task. This paper will summarise the prospects of…”
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    Journal Article
  16. 16

    Errors in near-surface and interfacial profiling of boron and arsenic by Vandervorst, W, Janssens, T, Brijs, B, Conard, T, Huyghebaert, C, Frühauf, J, Bergmaier, A, Dollinger, G, Buyuklimanli, T, VandenBerg, J.A, Kimura, K

    Published in Applied surface science (15-06-2004)
    “…To get an insight in the diffusion behavior of dopants such as arsenic and boron after annealing and in particular their segregation characteristics towards…”
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    Journal Article
  17. 17

    Bimodal range distributions of low-energy carbon ions in tetrahedral amorphous carbon by Neumaier, P, Bergmaier, A, Eckstein, W, Fischer, R, Hofsäss, H, Jäger, H. U, Kröger, H, Ronning, C, Dollinger, G

    Published in Europhysics letters (01-05-2010)
    “…Range and mixing distributions of carbon ions deposited onto tetrahedral amorphous carbon films at kinetic energies between 22 eV and 692 eV are measured…”
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    Journal Article
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    Sensitive 3D hydrogen microscopy by proton proton scattering by Reichart, P., Dollinger, G., Bergmaier, A., Datzmann, G., Hauptner, A., Körner, H.-J.

    “…Elastic proton proton scattering is a sensitive and fast method for hydrogen analysis. Utilising a nuclear microprobe it is actually the only technique for the…”
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    Journal Article
  20. 20

    δ-Doping in diamond by Kunze, M., Vescan, A., Dollinger, G., Bergmaier, A., Kohn, E.

    Published in Carbon (New York) (01-01-1999)
    “…δ-Boron-doped homoepitaxial diamond films grown by microwave CVD were optimized for field effect transistor application to obtain steep profiles. The critical…”
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    Journal Article Conference Proceeding