Search Results - "BAUMANN, F. H"

The electronic structure at the atomic scale of ultrathin gate oxides by Muller, D. A, Sorsch, T, Moccio, S, Baumann, F. H, Evans-Lutterodt, K, Timp, G

“…The narrowest feature on present-day integrated circuits is the gate oxide-the thin dielectric layer that forms the basis of field-effect device structures…”
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Microstructure Modulation in Copper Interconnects by Yang, C.-C, Li, B., Baumann, F. H., Li, J., Edelstein, D., Rosenberg, R.

“…Modulation of Cu interconnect microstructure in a low-k dielectric was achieved at an elevated anneal temperature of 250 °C. In contrast to the unpassivated…”
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Two-Dimensional Mapping of the Electrostatic Potential in Transistors by Electron Holography by Rau, W. D., Schwander, P., Baumann, F. H., Höppner, W., Ourmazd, A.

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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling by Venezia, V. C., Eaglesham, D. J., Haynes, T. E., Agarwal, Aditya, Jacobson, D. C., Gossmann, H.-J., Baumann, F. H.

“…A technique for profiling the clustered-vacancy region produced by high-energy ion implantation into silicon is described and tested. This technique takes…”
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Mapping projected potential, interfacial roughness, and composition in general crystalline solids by quantitative transmission electron microscopy by SCHWANDER, P, KISIELOWSKI, C, SEIBT, M, BAUMANN, F. H, KIM, Y, OURMAZD, A

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An approach to quantitative high-resolution transmission electron microscopy of crystalline materials by Kisielowski, C., Schwander, P., Baumann, F.H., Seibt, M., Kim, Y., Ourmazd, A.

“…We describe how lattice images may be used to measure the variation of the projected potential in crystalline solids in any projection, with no knowledge of…”
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Impact of gate-poly grain structure on the gate-oxide reliability [CMOS] by Kamgar, A., Vaidya, H.M., Baumann, F.H., Nakahara, S.

“…Time dependent dielectric breakdown of thin oxides, 1.5 to 5.0 nm has been studied for different gate-poly grain structures. The poly grain was varied by the…”
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Multilayers as microlabs for point defects: Effect of strain on diffusion in semiconductors by Baumann, FH, Huang, JH, Rentschler, JA, Chang, TY, Ourmazd, A

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Oxidation of Si beneath thin SiO2 layers during exposure to HBr/O2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy by Donnelly, V. M., Klemens, F. P., Sorsch, T. W., Timp, G. L., Baumann, F. H.

“…Thin SiO2 layers were exposed to an HBr/O2 plasma for a variety of short periods, reproducing the over-etching process after polycrystalline Si gate electrodes…”
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Effect of implant damage on the gate oxide thickness by Vuong, H.-H, Bude, J, Baumann, F.H, Evans-Lutterodt, K, Ning, J, Ma, Y, Mcmacken, J, Gossmann, H.-J, Silverman, P, Rafferty, C.S, Hillenius, S.J

“…Large area capacitors were fabricated with doping and oxide thickness representative of an n-MOSFET channel region. Capacitance–voltage ( C– V) measurements on…”
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Chemical characterization of (In,Ga)As/(Al,Ga)As strained interfaces grown by metalorganic chemical vapor deposition by KIM, J, ALWAN, J. J, FORBES, D. V, COLEMAN, J. J, ROBERTSON, I. M, WAYMAN, C. M, BAUMANN, F. H, BODE, M, KIM, Y, OURMAZD, A

“…We have used quantitative chemical mapping to determine the chemical abruptness of interfaces in In0.2Ga0.8As/Al0.2Ga0.8As strained multilayers grown by…”
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Interface Properties of Strained InGaAs/InP Quantum Wells Grown by LP-MOVPE by Schwedler, R., Gallmann, B., Wolter, K., Kohl, A., Leo, K., Kurz, H., Juillaguet, S., Camassel, J., Laurenti, J. P., Baumann, F. H.

“…We have analysed ultrathin (5-10 monolayers) In 1-x Ga x As/InP (0.17 < x > 1) quantum wells grown by low-pressure metal organic vapour phase epitaxy using…”
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Enhanced electromigration resistance through grain size modulation in copper interconnects by Yang, C.-C, Li, B., Baumann, F. H., Huang, E., Edelstein, D., Rosenberg, R.

“…Grain size modulation in Cu interconnects was achieved at an elevated anneal temperature of 250 °C. As compared to the conventional annealing at 100 °C, the…”
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Scanning capacitance microscopy imaging of silicon metal-oxide-semiconductor field effect transistors by Kleiman, R. N., O’Malley, M. L., Baumann, F. H., Garno, J. P., Timp, G. L.

“…We have studied cross-sectioned n- and p-metal-oxide-semiconductor field effect transistors with gate lengths approaching 60 nm using a scanning capacitance…”
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Real-space analysis of lattice images and its link to conventional theory by Maurice, J.-L., Schwander, P., Baumann, F.H., Ourmazd, A.

“…We show that real-space analysis of lattice images in terms of multidimensional vectors rests on a small number of physically significant dimensions, each…”
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A comparative study of the respiratory properties of bird blood by Baumann, F H, Baumann, R

“…Oxygen affinity and Bohr effect have been measured in the blood of four bird species (chicken, pigeon, Japanese quail and sparrow). Under physiological…”
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Capture of vacancies by extrinsic dislocation loops in silicon by Herner, S. B., Gossmann, H.-J., Baumann, F. H., Gilmer, G. H., Jacobson, D. C., Jones, K. S.

“…The capture of a flux of vacancies in Si by a band of extrinsic dislocation loops has been observed in Sb doping superlattices. Annealing Sb doping…”
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Characterization of stacked gate oxides by electron holography by Rau, W.-D., Baumann, F. H., Rentschler, J. A., Roy, P. K., Ourmazd, A.

“…We have used off-axis electron holography at a resolution of 3 Å to investigate amorphous bilayer gate oxides consisting of thermal and chemically deposited…”
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Low field mobility of ultra-thin SOI N- and P-MOSFETs: Measurements and implications on the performance of ultra-short MOSFETs by Esseni, D., Mastrapasqua, M., Celler, G.K., Baumann, F.H., Fiegna, C., Selmi, L., Sangiorgi, E.

“…Electron and hole effective mobilities of ultra-thin SOI N- and P-MOSFETs have been measured at different temperatures using a special test structure able to…”
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The impact of hole-induced electromigration on the cycling endurance of phase change memory by Lee, M H, Cheek, R, Chen, C F, Zhu, Y, Bruley, J, Baumann, F H, Shih, Y H, Lai, E K, Breitwisch, M, Schrott, A, Raoux, S, Joseph, E A, Cheng, H Y, Wu, J Y, Lung, H L, Lam, C

“…The high current density induced failure in Ge 2 Sb 2 Te 5 (GST)-based phase change memory (PCM) is investigated. A strong dependence of cycling endurance on…”
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