Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation

Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation

The Schottky barrier height (SBH) of Au on 4H-SiC(0001) has been studied using photoemission and synchrotron radiation. The Au was deposited in-situ on clean and well-ordered 3 x 3 R30 degrees reconstructed SiC surfaces prepared by in situ heating at approximately 950 C. The SBH was determined from...

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Bibliographic Details
Published in:Journal of electronic materials Vol. 31; no. 12; pp. 1353 - 1356
Main Authors: VIROJANADARA, C, GLANS, P.-A, BALASUBRUMNIAN, T, JOHANSSON, L. I, MACAK, E. B, WAHAB, Q, MADSEN, L. D
Format: Journal Article
Language:English
Published: New York, NY Institute of Electrical and Electronics Engineers 01-12-2002
Springer Nature B.V
Subjects:
Au/SiC
capacitance-voltage
Condensed matter: electronic structure, electrical, magnetic, and optical properties
contacts
current-voltage
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Fysik
Natural Sciences
Naturvetenskap
photoemission
Physical Sciences
Physics
Schottky barriers
silicon carbide
Surface double layers, schottky barriers, and work functions
surface treatment
TECHNOLOGY
TEKNIKVETENSKAP
Au/SiC
Gold
surface treatment
Schottky barriers
Silicon carbides
photoemission
Experimental study
Core levels
capacitance-voltage
silicon carbide
Surface reconstruction
current-voltage
Barrier height
IV characteristic
Synchrotron radiation
contacts
X-ray photoelectron spectra
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Description
Summary:The Schottky barrier height (SBH) of Au on 4H-SiC(0001) has been studied using photoemission and synchrotron radiation. The Au was deposited in-situ on clean and well-ordered 3 x 3 R30 degrees reconstructed SiC surfaces prepared by in situ heating at approximately 950 C. The SBH was determined from the shift observed in the Si 2p core level, in addition to the initial band bending determined for the clean surface. The results were compared with values obtained by electrical, C-V, and I-V characterization methods. A favorable comparison between the three independent, SBH determination methods was found. 13 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0361-5235
1543-186X
1543-186X
DOI:10.1007/s11664-002-0121-8