Search Results - "BACHLECHNER, M. E"

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  1. 1

    Structural correlations at Si/Si3N4 interface and atomic stresses in Si/Si3N4 nanopixel-10 million-atom molecular dynamics simulation on parallel computers by BACHLECHNER, M. E, KALIA, R. K, NAKANO, A, OMELTCHENKO, A, VASISHTA, P, EBBSJÖ, I, MADHUKAR, A, ZHAO, G.-L

    Published in Journal of the European Ceramic Society (01-01-1999)
    “…Calculations of charge transfer at the Si/Si3N4 interface were combined with interaction potential models for bulk Si and Si3N4 to produce a model for the…”
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    Conference Proceeding Journal Article
  2. 2

    Coupling length scales for multiscale atomistics-continuum simulations: atomistically induced stress distributions in Si/Si3N4 nanopixels by Lidorikis, E, Bachlechner, M E, Kalia, R K, Nakano, A, Vashishta, P, Voyiadjis, G Z

    Published in Physical review letters (20-08-2001)
    “…A hybrid molecular-dynamics (MD) and finite-element simulation approach is used to study stress distributions in silicon/silicon-nitride nanopixels. The hybrid…”
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    Journal Article
  3. 3

    Multiscale simulation of nanosystems by Nakano, A., Bachlechner, M.E., Kalia, R.K., Lidorikis, E., Vashishta, P., Voyiadjis, G.Z., Campbell, T.J., Ogata, S., Shimojo, F.

    Published in Computing in science & engineering (01-07-2001)
    “…The authors describe simulation approaches that seamlessly combine continuum mechanics with atomistic simulations and quantum mechanics. They also discuss…”
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    Journal Article
  4. 4

    Large-scale atomistic modeling of nanoelectronic structures by Nakano, A., Bachlechner, M.E., Branicio, P., Campbell, T.J., Ebbsjo, I., Kalia, R.K., Madhukar, A., Ogata, S., Omeltchenko, A., Rino, J.P., Shimojo, F., Walsh, P., Vashishta, P.

    Published in IEEE transactions on electron devices (01-10-2000)
    “…Large-scale molecular-dynamics simulations are performed on parallel computers to study critical issues on ultrathin dielectric films and device reliability in…”
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    Journal Article
  5. 5

    Multi-pair excitations in an electron liquid by Bachlechner, M.E., Holas, A., Böhm, H.M., Schinner, A.

    “…Single (particle-hole)-pair excitations, as described in the well-known Lindhard function, are restricted to a strip in the ( q, ω) plane — the so-called…”
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    Journal Article
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    Stress domains in Si(111)/a-Si3N4 nanopixel: ten-million-atom molecular dynamics simulations on parallel computers by Omeltchenko, A, Bachlechner, ME, Nakano, A, Kalia, RK, Vashishta, P, Ebbsjo, I, I, Madhukar, A, Messina, P

    Published in Physical review letters (10-01-2000)
    “…Parallel molecular dynamics simulations are performed to determine atomic-level stresses in Si(111)/Si(3)N4(0001) and Si(111)/a-Si3N4 nanopixels. Compared to…”
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    Journal Article
  10. 10

    Multimillion-atom molecular dynamics simulation of atomic level stresses in Si(111)/Si3N4(0001) nanopixels by Bachlechner, Martina E., Omeltchenko, Andrey, Nakano, Aiichiro, Kalia, Rajiv K., Vashishta, Priya, Ebbsjö, Ingvar, Madhukar, Anupam, Messina, Paul

    Published in Applied physics letters (20-04-1998)
    “…Ten million atom multiresolution molecular-dynamics simulations are performed on parallel computers to determine atomic-level stress distributions in a 54 nm…”
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    Journal Article
  11. 11

    Dislocation emission at the Silicon/Silicon nitride interface: A million atom molecular dynamics simulation on parallel computers by Bachlechner, ME, Omeltchenko, A, Nakano, A, Kalia, RK, Vashishta, P, Ebbsjo, I, I, Madhukar, A

    Published in Physical review letters (10-01-2000)
    “…Mechanical behavior of the Si(111)/Si(3)N4(0001) interface is studied using million atom molecular dynamics simulations. At a critical value of applied strain…”
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    Journal Article
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