Search Results - "Azhdarov, G. Kh"

A Model for Crystal Growth of Solid Solutions in the InAs–GaAs System by a Modified Floating-Zone Technique by Agamaliyev, Z. A., Ramazanov, M. A., Azhdarov, G. Kh

“…— In this paper, we present a principle and theoretical basis of the growth of single crystals of semiconductor solid solutions by a new modified floating zone…”
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Deep donor center in Ge1 − xSix〈Cu,In,Sb〉 crystals at 1050–1080 K by Azhdarov, G. Kh, Zeynalov, Z. M., Kyazimova, V. K., Huseynli, L. A.

“…Hall effect measurements demonstrate that quenching of Ge 1 − x Si x 〈Cu,In,Sb〉 (0 ≤ x ≤ 0.20) multiply doped crystals from 1050–1080 K leads to the formation…”
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Donor Complexes Formed by Cu and Zn Multi-Acceptor Impurities in Ge Crystals by Aghamaliev, Z. A., Azhdarov, G. Kh

“…― Based on Hall effect measurements it is shown that quenching of complexly doped Ge〈Zn,Сu〉 crystals at 1070–1100 K leads to the formation of additional…”
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Segregation of aluminum and indium impurities in Ge1−x Si x crystals by Zakhrabekova, Z. M., Zeinalov, Z. M., Kyazimova, V. K., Azhdarov, G. Kh

“…Crystals of aluminum-and indium-doped Ge1-x Si x (01-x Si x crystals are linear functions of the solid-solution composition…”
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Modeling the distribution of Ga and Sb impurities in Ge‒Si single crystals grown by double feeding of the melt: Growth conditions for homogeneous single crystals by Aghamaliyev, Z. A., Islamzade, E. M., Azhdarov, G. Kh

“…Mathematical modeling of the distribution of Ga and Sb impurities in homogeneous (with respect to the content of the main components) single crystals of Ge–Si…”
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Hybrid technique for growing homogeneous single crystals of semiconductor solid solutions from melt by Azhdarov, G. Kh, Agamaliev, Z. A., Islamzade, E. M.

“…A concept and fundamentals of a hybrid technique for growing homogeneous single crystals of semiconductor solid solutions (SSs) from melt are presented. The…”
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Distribution of Al and in impurities along homogeneous Ge-Si crystals grown by the Czochralski method using Si feeding rod by Kyazimova, V. K., Alekperov, A. I., Zakhrabekova, Z. M., Azhdarov, G. Kh

“…A distribution of Al and In impurities in Ge 1 − x Si x crystals (0 ≤ x ≤ 0.3) grown by a modified Czochralski method (with continuous feeding of melt using a…”
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Deep acceptor complex in thermally processed Ge-Si〈Ga,Ni〉 crystals by Islamzade, E. M., Agamaliev, Z. A., Zakhrabekova, Z. M., Azhdarov, G. Kh

“…Based on experimental data on the temperature dependences of the free carrier concentration in complex-doped Ge 1 − x Si x 〈Ga,Ni〉 crystals (0 ≤ x ≤ 0.25), it…”
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Modeling the concentration profiles of aluminum and indium impurities in crystals of germanium–silicon solid solutions by Agamaliev, Z. A., Zakhrabekova, Z. M., Kyazimova, V. K., Azhdarov, G. Kh

“…A one-dimensional problem of the axial distribution of Al and In impurities in uniform crystals of Ge–Si solid solutions grown by double feeding of the melt…”
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The distribution of Ga and Sb impurities in Ge-Si crystals grown by the Bridgman method using a feeding rod by Azhdarov, G. Kh, Zeynalov, Z. M., Huseynli, L. A.

“…Gallium- and antimony-doped Ge 1 − x Si x crystals (0 ≤ x ≤ 0.25) have been grown by the improved Bridgman method using a silicon seed and a macrohomogeneous…”
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Growth of single crystals of semiconductor solid solutions by double feeding of the melt method by Azhdarov, G. Kh, Zeynalov, Z. M., Agamaliyev, Z. A., Kyazimova, A. I.

“…The problem of component distribution in solid solution crystals grown from a melt fed by rods made of the components of the system, with allowance for the…”
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Growth dynamics of Ge1−x Si x single crystals obtained by directional constitutional supercooling of the melt by Azhdarov, G. Kh, Zeynalov, Z. M., Agamaliyev, Z. A., Mamedova, S. O.

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Growth dynamics of Ge1−xSix single crystals obtained by directional constitutional supercooling of the melt by Azhdarov, G. Kh, Zeynalov, Z. M., Agamaliyev, Z. A., Mamedova, S. O.

“…The problem of growth dynamics for crystals of binary solid solutions, obtained by the constitutional supercooling of the melt with a silicon feeding rod, has…”
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Deep donor center in Ge1 − x Si x 〈Cu,In,Sb〉 crystals at 1050–1080 K by Azhdarov, G. Kh, Zeynalov, Z. M., Kyazimova, V. K., Huseynli, L. A.

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Electroactive complex in thermally treated Ge-Si 〈Cu, Al〉 crystals by Azhdarov, G. Kh, Zeynalov, Z. M., Zakhrabekova, Z. M., Kyazimova, A. I.

“…It is shown by Hall measurements that quenching complexly doped Ge 1 − x Si x 〈Cu, Al〉 (0 ≤ x ≤ 0.20) crystals from 1050–1080 K leads to the formation of…”
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Distribution of aluminum and indium impurities in crystals of Ge-Si solid solutions grown from the melt by Kyazimova, V. K., Zeynalov, Z. M., Zakhrabekova, Z. M., Azhdarov, G. Kh

“…The problem regarding the distribution of aluminum and indium impurities in bulk crystals of solid solutions with a variable composition Ge{sub 1-x}Si{sub x}…”
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Distribution of components in Ge–Si bulk single crystals grown under the continuous feeding of the melt with the second component (Si) by Azhdarov, G.Kh, Küçükömeroglu, T., Varilci, A., Altunbaş, M., Kobya, A., Azhdarov, P.G.

“…A component distribution in Ge-rich Ge–Si single crystals grown under the continuous feeding of the melt with the second component (Si) has been analyzed…”
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Growth of homogeneous single crystals of GeSi solid solutions using a Ge seed by the modified Bridgman method by Azhdarov, G. Kh, Kyazimzade, R. Z.

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Deep impurity levels in Ge1-xSix alloys by AZHDAROV, G. K, KYAZIMZADE, R. Z, HOSTUT, M

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