Search Results - "Azarov, Alexander Yu"

Cubic silicon carbide as a potential photovoltaic material by Syväjärvi, Mikael, Ma, Quanbao, Jokubavicius, Valdas, Galeckas, Augustinas, Sun, Jianwu, Liu, Xinyu, Jansson, Mattias, Wellmann, Peter, Linnarsson, Margareta, Runde, Paal, Johansen, Bertil Andre, Thøgersen, Annett, Diplas, Spyros, Carvalho, Patricia Almeida, Løvvik, Ole Martin, Wright, Daniel Nilsen, Azarov, Alexander Yu, Svensson, Bengt G.

“…In this work we present a significant advancement in cubic silicon carbide (3C-SiC) growth in terms of crystal quality and domain size, and indicate its…”
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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy by Egorov, Konstantin V., Lebedinskii, Yury Yu, Soloviev, Anatoly A., Chouprik, Anastasia A., Azarov, Alexander Yu, Markeev, Andrey M.

“…[Display omitted] •The in vacuo angle resolved XPS was applied to study ALD Ru growth.•Influence of plasma treatment of substrate on Ru nucleation process was…”
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Annealing of ion implanted 4H-SiC in the temperature range of 100-800 degrees C analysed by ion beam techniques by Usman, Mohammad, Nour, Magzoub, Azarov, Alexander Yu, Hallén, Anders

“…Ion implantation induced damage formation and subsequent annealing in 4H-SiC in the temperature range of 100-800 degrees C has been investigated. Silicon…”
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Influence of ion irradiation on internal residual stress in DLC films by Karaseov, Platon A., Podsvirov, Oleg A., Karabeshkin, Konstantin V., Vinogradov, Andrei Ya, Azarov, Alexander Yu, Karasev, Nikita N., Titov, Andrei I., Smirnov, Alexander S.

“…The dependence of internal residual stress in thin diamond-like carbon films grown on Si substrate by PECVD technique on most important growth parameters,…”
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