Search Results - "Ayling, S.G."

Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion by Boon Siew Ooi, McIlvaney, K., Street, M.W., Helmy, A.S., Ayling, S.G., Bryce, A.C., Marsh, J.H., Roberts, J.S.

“…Impurity-free vacancy disordering (IFVD) using SiO/sub 2/ and SrF/sub 2/ dielectric caps to induce selective quantum-well (QW) intermixing in the GaAs-AlGaAs…”
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Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run by Balmer, R.S., Heaton, J.M., Maclean, J.O., Ayling, S.G., Newey, J.P., Houlton, M., Calcott, P.D.J., Wight, D.R., Martin, T.

“…Next-generation optical-communications systems require on-wafer integration of active and passive opto-electronic components to increase operating speed and…”
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Fabrication of multiple wavelength lasers in GaAs-AlGaAs structures using a one-step spatially controlled quantum-well intermixing technique by Ooi, B.S., Ayling, S.G., Bryce, A.C., Marsh, J.H.

“…We have applied a new technique, based on impurity-free vacancy diffusion, to control the degree of intermixing across a wafer. Bandgap tuned lasers were…”
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Single-mode operation of a surface grating distributed feedback GaAs-AlGaAs laser with variable-width waveguide by Abe, H., Ayling, S.G., Marsh, J.H., De La Rue, R.M., Roberts, J.S.

“…Single-mode distributed feedback laser operation can be achieved by introducing an appropriate phase jump within the feedback grating, causing lasing to occur…”
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Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE) by Balmer, R.S, Martin, T, Kane, M.J, Maclean, J.O, Whitaker, T.J, Ayling, S.G, Calcott, P.D.J, Houlton, M, Newey, J.P, O'Mahony, S.J

“…An integration concept which involves the selective deposition of quantum wells in spatially selected areas of a wafer and in the middle of a waveguide…”
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Low-loss extended cavity lasers by dielectric cap disordering with a novel masking technique by Beauvais, J., Ayling, S.G., Marsh, J.H.

“…Low-loss extended cavity lasers fabricated in GaAs/AlGaAs quantum-well material busing silica cap disordering and strontium fluoride selective area masking are…”
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Novel integrated laser devices with greatly enhanced quantum efficiency and intrinsic RF matching for low loss, broad band opto-microwave applications by Ayling, S.G., Wight, D.R., Allenson, M.B., Hilton, K.P., Smith, G.W.

“…Fibre-optic analogue links and optically coupled transistors are inherently lossy unless narrow band matched. We demonstrate two novel laser devices with…”
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Lasing properties of GaAs/AlGaAs lasers grown by MOVPE and bandgap-shifted by impurity free vacancy diffusion by Ayling, S.G., Bryce, A.C., Marsh, J.H., Roberts, J.S.

“…Bandgap shifting by impurity-free vacancy diffusion was investigated using carbon p-doped quantum well laser structures. Spectra and L-I characteristics were…”
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Quantum well intermixing technologies for quasi-phase-matching gratings by Helmy, A.S., Hutchings, D.C., Kleckner, T.C., Aitchison, J.S., Bryce, A.C., Marsh, J.H., Martin, P., Landesman, J.P., Brown, C.T.A., Moutzouris, K., Ebrahimzadeh, M., Ayling, S.G.

“…Most of the studies carried out to date on the spatial selectively of the quantum well intermixing process have involved characterising either large intermixed…”
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First demonstration of a high power, wide band microwave amplifier based upon an optically coupled transistor by Ayling, S.G., Chidley, E.T.R., Evans, M.R., Wight, D.R., Allenson, M.B., Hilton, K.P., Smith, G.W., Roberts, J.S.

“…We demonstrate a microwave amplifier intrinsically broadband matched to 50 /spl Omega/ consisting of a ten element series connected laser diode array and…”
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