Search Results - "Axness, C. L."

Modeling the time-dependent transient radiation response of semiconductor junctions by Wunsch, T.F., Axness, C.L.

“…Analytical one-dimensional time-dependent photocurrent models are developed from new solutions to the ambipolar transport equation. The p-n junction model…”
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Latent interface-trap buildup and its implications for hardness assurance (MOS transistors) by Schwank, J.R., Fleetwood, D.M., Shaneyfelt, M.R., Winokur, P.S., Axness, C.L., Riewe, L.C.

“…Long-term anneals at temperatures from 25 degrees C to 135 degrees C were performed on irradiated MOS transistors. Following the normal saturation of…”
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A comparison of seven geostatistically based inverse approaches to estimate transmissivities for modeling advective transport by groundwater flow by Zimmerman, D. A., Marsily, G., Gotway, C. A., Marietta, M. G., Axness, C. L., Beauheim, R. L., Bras, R. L., Carrera, J., Dagan, G., Davies, P. B., Gallegos, D. P., Galli, A., Gómez‐Hernández, J., Grindrod, P., Gutjahr, A. L., Kitanidis, P. K., Lavenue, A. M., McLaughlin, D., Neuman, S. P., RamaRao, B. S., Ravenne, C., Rubin, Y.

“…This paper describes the first major attempt to compare seven different inverse approaches for identifying aquifer transmissivity. The ultimate objective was…”
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SEU simulation and testing of resistor-hardened D-latches in the SA3300 microprocessor by Sexton, F.W., Corbett, W.T., Treece, R.K., Hass, K.J., Hughes, K.L., Axness, C.L., Hash, G.L., Shaneyfelt, M.R., Wunsch, T.F.

“…The SEU tolerance of the SA3300 microprocessor with feedback resistors is presented and compared to the SA3300 without feedback resistors and to the commercial…”
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Radiation characteristics of SIPOS and polysilicon resistors by Axness, C.L., Riewe, L., Reber, R.A., Liang, A.Y., Ang, S.S., Brown, W.D.

“…The radiation characteristics of polysilicon and SIPOS resistors are compared. SIPOS is being considered as a replacement material for polysilicon in feedback…”
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Single event upset in irradiated 16K CMOS SRAMs by AXNESS, C L, Schwank, J R, Winokur, P S, Browning, J S, Koga, R

“…The single-event-upset (SEU) characteristics of a CMOS SRAM cell irradiated under conditions that simulate the total-dose degradation anticipated in space…”
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RAM cell recovery mechanisms following high-energy ion strikes by Weaver, H.T., Axness, C.L., Fu, J.S., Binkley, J.S., Mansfield, J.

“…Recovery times for a RAM cell following a high-energy ion strike are calculated using simulation techniques in which transport and circuit behavior are modeled…”
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Memory SEU simulations using 2-D transport calculations by Fu, J.S., Axness, C.L., Weaver, H.T.

“…An advance in the simulation of a single event upset (SEU) of a static memory is achieved by combining transport and circuit effects in a single calculation…”
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An SEU Tolerant Memory Cell Derived from Fundamental Studies of SEU Mechanisms in SRAM by Weaver, H. T., Axness, C. L., McBrayer, J. D., Browning, J. S., Fu, J. S., Ochoa, A., Koga, R.

“…A new single event upset (SEU) hardening concept, an LRAM cell, is demonstrated theoretically and experimentally. Decoupling resistors in the LRAM are used…”
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SEU characterization and design dependence of the SA3300 microprocessor by Sexton, F.W., Treece, R.K., Hass, K.J., Hughes, K.L., Hash, G.L., Axness, C.L., Buchner, S.P., Kang, K.

“…A detailed characterization is presented of the single-event upset (SEU) sensitivity of the SA3300 microprocessor focusing specifically on the internal…”
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A proposed new structure for SEU immunity in SRAM employing drain resistance by Ochoa, A., Axness, C.L., Weaver, H.T., Fu, J.S.

“…A novel static random access memory (SRAM) cell is proposed (LRAM) in which resistors are used to delay ion-induced transients conventionally, and to divide…”
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The 2D Steady Hydraulic Head Field Surrounding a Pumping Well in a Finite Heterogeneous Confined Aquifer by Axness, Carl L, Carrera, Jesus

“…We present a second-order analytic solution [in terms of a heterogeneous log-transmissivity Y(r) = ln T(r)] for the hydraulic head field in a finite 2D…”
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Mechanisms Leading to Single Event Upset by Axness, C. L., Weaver, H. T., Fu, J. S., Koga, R., Kolasinski, W. A.

“…SRAM cell recovery time following a 140 MeV Krypton strike on a Sandia SRAM is modelled using a two-dimensional transient numerical simulator and circuit code…”
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Upscaling transmissivity under radially convergent flow in heterogeneous media by Sánchez‐Vila, Xavier, Axness, Carl L., Carrera, Jesús

“…Most field methods used to estimate transmissivity values rely on the analysis of drawdown under convergent flow conditions. For a single well in a homogeneous…”
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Latent interface-trap buildup and its implications for hardnessassurance MOS transistors by Schwank, J R, Fleetwood, D M, Shaneyfelt, M R, Winokur, P S, Axness, C L, Riewe, L C

“…Long-term anneals at temperatures from 25 deg C to 135 deg C were performed on irradiated MOS transistors. Following the normal saturation of interface-trap…”
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Two-Dimensional Simulation of Single Event Indujced Bipolar Current in CMOS Structures by Fu, J. S., Axness, C. L., Weaver, H. T.

“…Single particle effects are analyzed using an advanced two-dimensional transient numerical simulator. Layered structures representative of an n-channel MOSFET…”
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Single event upset in irradiated 16 K CMOS SRAMs by Axness, C.L., Schwank, J.R., Winokur, P.S., Browning, J.S., Koga, R., Fleetwood, D.M.

“…The single-event-upset (SEU) characteristics of a CMOS SRAM cell irradiated under conditions that simulate the total-dose degradation anticipated in space…”
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SEU characterization and design dependence of the SA3300 microprocessor by Sexton, F W, Treece, R K, Axness, C L, Hughes, K H, Hash, G L, Hass, K J

“…The SA3300 16-bit microprocessor is a key component for interplanetary space probes to be launched in the 1990's. A full SEU characterization of the D-latches…”
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Single Event Upset In CMOS Static Ram And Latches by Axness, C.L., Weaver, H.T., Giddings, A.E., Shafer, B.D.

“…Single event upset (SEU) susceptibility due to high-energy ion hits on static RAM (SRAM) cells and various latch designs is evaluated using the two-dimensional…”
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