Search Results - "Axmann, A."
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1.54-μm Luminescence of erbium-implanted III-V semiconductors and silicon
Published in Applied physics letters (01-01-1983)“…Well-resolved sharply structured luminescence spectra at 1.54 μm were observed in erbium-implanted GaP, GaAs, InP, and Si. The optical transitions occur…”
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Subpicosecond carrier lifetimes in radiation-damaged GaAs
Published in Applied physics letters (29-04-1991)“…We investigate the dependence of carrier lifetimes in radiation-damaged, GaAs on proton implantation dose by means of time-resolved reflectivity and…”
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1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy
Published in Applied physics letters (01-01-1985)“…The feasibility of producing erbium-doped silicon light-emitting diodes by molecular beam epitaxy is demonstrated. The p-n junctions are formed by growing an…”
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FRM-II: The new German research reactor
Published in Nuclear engineering and design (01-12-1997)“…A new German high-flux research reactor is presently being built in Garching by the Technical University of Munich. The new reactor, called FRM-II, shall…”
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Transit time limited response of GaAs metal-semiconductor-metal photodiodes
Published in Applied physics letters (03-06-1991)“…The response of GaAs metal-semiconductor-metal (MSM) photodiodes at low temperatures has been investigated in the time domain by photoconductive sampling. The…”
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Source materials for ion implantation
Published in Applied physics letters (01-01-1973)“…A survey is given of source materials which can be used to draw ion currents from a Nielsen source. More than 50 different ion species are listed including…”
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Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes
Published in Applied physics letters (01-04-1991)“…The temporal evolution of the photocurrent in interdigitated GaAs metal-semiconductor- metal Schottky photodiodes is directly measured in the time domain by…”
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10 Gbit/s Monolithic Integrated Optoelectronic Receiver using an MSM Photodiode and AlGaAs/GaAs HEMTs
Published in ESSDERC '91: 21st European Solid State Device Research Conference (1991)“…A 10 Gbit/s monolithic integrated optoelectronic receiver has been fabricated with a metal-semiconductor-metal (MSM) photodiode and enhancement/depletion 0.5…”
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Eastern Europe and Community of Independent States
Published in International migration (01-01-1998)“…The countries of the CIS are Armenia, Azerbaijan, Belarus, Estonia, Georgia, Kazakhstan, Kyrgyzstan, Latvia, Lithuania, Moldova, Russian Federation,…”
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Implantation doping of germanium with Sb, As, and P
Published in Applied Physics (01-02-1977)Get full text
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Picosecond Optoelectronic Switches
Published in Physica scripta (01-01-1986)“…Picosecond optoelectronic switches are used to generate electrical pulses with picosecond duration from correspondingly short optical pulses. This is…”
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Problems of chloroquine-resistant plasmodium falciparum
Published in Therapia Hungarica (English edition) (1988)Get more information
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Transforming growth factor-beta1-induced activation of the Raf-MEK-MAPK signaling pathway in rat lung fibroblasts via a PKC-dependent mechanism
Published in Biochemical and biophysical research communications (19-08-1998)“…In fibroblasts transforming growth factor-beta1 (TGF-beta1) regulates cell proliferation and turnover of macromolecular components of the extracellular matrix…”
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Transforming growth factor-beta1 induces activation of Ras, Raf-1, MEK and MAPK in rat hepatic stellate cells
Published in FEBS letters (10-02-1997)“…The transdifferentiation of hepatic stellate cells into myofibroblast-like cells and the proliferation of the transdifferentiated cells are controlled by…”
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Neutron-Scattering Studies of an Electron-Irradiated 62Ni--41.4 at.-%--65Cu Alloy
Published in Physical review. B, Condensed matter (15-04-1980)“…Neutron-diffraction studies of the null matrix 62Ni--41.4 at.-%--65Cu have been performed after thermal treatment and after irradiation with 3 MeV electrons at…”
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Neutron-scattering studies of an electron-irradiated Ni 62 -41.4-at.%- Cu 65 alloy
Published in Physical review. B, Condensed matter (01-04-1980)Get full text
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