Search Results - "Awan, Kashif M."

Group III-V semiconductors as promising nonlinear integrated photonic platforms by Vyas, Kaustubh, Espinosa, Daniel H. G., Hutama, Daniel, Jain, Shubhendra Kumar, Mahjoub, Rania, Mobini, Ehsan, Awan, Kashif M., Lundeen, Jeff, Dolgaleva, Ksenia

“…Group III-V semiconductors are based on the elements of groups III and V of the periodic table. The possibility to grow thin-films made of binary, ternary, and…”
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Hyperpolarizability of Plasmonic Meta-Atoms in Metasurfaces by Bin-Alam, M Saad, Baxter, Joshua, Awan, Kashif M, Kiviniemi, Antti, Mamchur, Yaryna, Lesina, Antonio Calà, Tsakmakidis, Kosmas L, Huttunen, Mikko J, Ramunno, Lora, Dolgaleva, Ksenia

“…Plasmonic metasurfaces are promising as enablers of nanoscale nonlinear optics and flat nonlinear optical components. Nonlinear optical responses of such…”
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Spectroscopic Signatures of Plasmonic Near‐Fields on High‐Harmonic Emission by Jalil, Sohail A., Awan, Kashif M., Baxter, Joshua, Bart, Graeme, Purschke, David N., Fennel, Thomas, Villeneuve, David M., Staudte, André, Berini, Pierre, Brabec, Thomas, Ramunno, Lora, Vampa, Giulio

“…Intense laser fields can reveal the attosecond and femtosecond response of matter in the emitted photoelectrons and high‐harmonic photons. The complementary…”
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Tuneable four-wave mixing in AlGaAs nanowires by Dolgaleva, Ksenia, Sarrafi, Peyman, Kultavewuti, Pisek, Awan, Kashif M, Feher, Norbert, Aitchison, J Stewart, Qian, Li, Volatier, Maïté, Arès, Richard, Aimez, Vincent

“…We have experimentally demonstrated broadband tuneable four-wave mixing in AlGaAs nanowires with the widths ranging between 400 and 650 nm and lengths from 0…”
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Tunable four-wave mixing in AlGaAs waveguides of three different geometries by Espinosa, Daniel H.G., Awan, Kashif M., Odungide, Mfon, Harrigan, Stephen R., Sanchez, David R., Dolgaleva, Ksenia

“…The AlGaAs material platform has been intensively used to develop nonlinear photonic devices on-a-chip, thanks to its superior nonlinear optical properties. We…”
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Demonstration of optical nonlinearity in InGaAsP/InP passive waveguides by Saeidi, Shayan, Rasekh, Payman, Awan, Kashif M., Tüğen, Alperen, Huttunen, Mikko J., Dolgaleva, Ksenia

“…We report on the study of the third-order nonlinear optical interactions in InxGa1-xAsyP1-y/InP strip-loaded waveguides. The material composition and waveguide…”
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Aluminium gallium arsenide waveguide designs for efficient four-wave mixing by Awan, Kashif M., Feher, Norbert, Boyd, Robert, Dolgaleva, Ksenia

“…Explosive growth in internet traffic has prompted huge interest in the area of all-optical signal processing. It can provide much higher data rates at much…”
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Epitaxially-grown Gallium Nitride on Gallium Oxide substrate for photon pair generation in visible and telecomm wavelengths by Awan, Kashif M., Dolgaleva, Ksenia, Muhammed, Mufasila M., Roqan, Iman S.

“…Gallium Nitride (GaN), along with other III-Nitrides, is attractive for optoelectronic and electronic applications due to its wide direct energy bandgap, as…”
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Controlling the polarization and phase of high-order harmonics with a plasmonic metasurface by Jalil, Sohail A., Awan, Kashif M., Ali, Idriss A., Rashid, Sabaa, Baxter, Joshua, Korobenko, Aleksey, Ernotte, Guilmot, Naumov, Andrei, Villeneuve, David M., Staudte, André, Berini, Pierre, Ramunno, Lora, Vampa, Giulio

“…Nanostructured surfaces, or metasurfaces, allow exquisite control of linear and nonlinear optical processes by reshaping the amplitude, phase, and polarization…”
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Fabrication and optical characterization of GaN waveguides on (−201)-oriented β-Ga_2O_3 by Awan, Kashif M., Muhammad, Mufasila M., Sivan, Madhavi, Bonca, Spencer, Roqan, Iman S., Dolgaleva, Ksenia

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Fabrication and optical characterization of GaN waveguides on (−201)-oriented β-Ga^sub 2^O^sub 3 by Awan, Kashif M, Muhammad, Mufasila M, Sivan, Madhavi, Bonca, Spencer, Roqan, Iman S, Dolgaleva, Ksenia

“…Gallium nitride (GaN), a wide-bandgap III–V semiconductor material with a bandgap wavelength λg = 366 nm (for Wurtzite GaN) and transparency window covering…”
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Quaternary III-V semiconductor compounds for integrated nonlinear optics by Saeidi, Shayan, Awan, Kashif M., Dolgaleva, Ksenia

“…In this study, we propose several designs for integrated waveguides based on quaternary III-V semiconductor compounds InGaAsP (on InP substrate) and AlGaAsSb…”
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Geometry-dependent two-photon absorption followed by free-carrier absorption in AlGaAs waveguides by Espinosa, Daniel H. G, Harrigan, Stephen R, Awan, Kashif M, Rasekh, Payman, Dolgaleva, Ksenia

“…Nonlinear absorption can limit the efficiency of nonlinear optical devices. However, it can also be exploited for optical limiting or switching applications…”
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Tunable Four-Wave Mixing in AlGaAs Waveguides of Three Different Geometries by Espinosa, Daniel H. G, Awan, Kashif M, Odungide, Mfon, Harrigan, Stephen R, J, David R. Sanchez, Dolgaleva, Ksenia

“…The AlGaAs material platform has been intensively used to develop nonlinear photonic devices on-a-chip, thanks to its superior nonlinear optical properties. We…”
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Hyperpolarizability of plasmonic meta-atoms in metasurfaces by Bin-Alam, M. Saad, Baxter, Joshua, Awan, Kashif M, Kiviniemi, Antti, Mamchur, Yaryna, Lesina, Antonio Cala', Tsakmakidis, Kosmas L, Huttunen, Mikko J, Ramunno, Lora, Dolgaleva, Ksenia

“…Plasmonic metasurfaces are promising as enablers of nanoscale nonlinear optics and flat nonlinear optical components. Nonlinear optical responses of such…”
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Demonstration of Optical Nonlinearity in InGaAsP/InP Passive Waveguides by Saeidi, Shayan, Rasekh, Payman, Awan, Kashif M, Tüğen, Alperen, Huttunen, Mikko J, Dolgaleva, Ksenia

“…We report on the study of the third-order nonlinear optical interactions in In$_{x}$Ga$_{1-x}$As$_{y}$P$_{1-y}$/InP strip-loaded waveguides. The material…”
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Gallium nitride on gallium oxide substrate for integrated nonlinear optics by Awan, Kashif M., Dolgaleva, Ksenia, Muhammed, Mufasila M., Roqan, Iman S.

“…Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic…”
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