Search Results - "Avset, B. S."

Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon by MIKELSEN, M, MONAKHOV, E. V, ALFIERI, G, AVSET, B. S, SVENSSON, B. G

“…In this work the thermal kinetics of the transformation from the divacancy (V{sub 2}) to the divacancy-oxygen (V{sub 2}O) complex has been studied in detail,…”
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Annealing dynamics of irradiation-induced defects in high-purity silicon in the presence of hydrogen by Bleka, J. H., Malmbekk, H., Monakhov, E. V., Svensson, B. G., Avset, B. S.

“…A reaction model explaining (i) the hydrogen-mediated transformation of the vacancy-oxygen (V O) center into a vacancy-oxygen-hydrogen center (V OH*), with an…”
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End-user survey for digital sensor characteristics: a pilot questionnaire study by Li, G, van der Stelt, P F, Verheij, J G C, Speller, R, Galbiati, A, Psomadellis, F, Turchetta, R, Theodoridis, S, Hall, G, Avset, B S, Triantis, F A, Longo, R

“…To survey end-user opinions on dental digital sensor characteristics for the design of a new X-ray imaging sensor. 100 questionnaires were sent out to dentists…”
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Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si by Monakhov, E. V., Avset, B. S., Hallén, Anders, Svensson, B. G.

“…Deep-level transient spectroscopy studies of electronic defect levels in 7-MeV proton-irradiated n-type float-zone Si with a doping of (3-5)x10(12) cm(-3) and…”
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On the formation of the L-centre in silicon during heat treatment in the temperature range 205–285°C by Mikelsen, M, Monakhov, E V, Avset, B S, Svensson, B G

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Punch-through currents and floating strip potentials in silicon detectors by Ellison, J., Hall, G., Roe, S., Wheadon, R., Avset, B.S., Evensen, L.

“…Punch-through currents flowing between adjacent p/sup +/ strips on the surface of silicon microstrip drift detectors have been observed. Measurements of the…”
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Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon by Mikelsen, M., Bleka, J. H., Christensen, J. S., Monakhov, E. V., Svensson, B. G., Härkönen, J., Avset, B. S.

“…After low dose electron irradiation, annealing kinetics of divacancy-oxygen (V{sub 2}O) and vacancy-oxygen (VO) complexes in carbon-lean n-type magnetic…”
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A new microstrip detector with double-sided readout by Avset, B.S., Evensen, L., Chabaud, V., Dijkstra, H., Horisberger, R., Hubbeling, L., Maehlum, G., Peisert, A., Roditi, I., Weilhammer, P., Czermak, A., Jalocha, P., Turala, M., Bambade, P., Dulinski, W., Turchetta, R., Schaeffer, M., Battaglia, M., Hietanen, I., Tuuva, T.

“…A silicon microstrip detector has been developed with 50- mu m-pitch strips on both the p- and n-side, using the principle of capacitive coupling between p/sup…”
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A silicon drift photodiode by Avset, B.S., Ellison, J.A., Evensen, L., Hall, G., Hansen, T.-E., Roe, S., Wheadon, R.

“…A low-capacitance photodiode based on the principle of the solid-state drift chamber has been constructed and tested. The device is based on a cellular design…”
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On the identity of a crucial defect contributing to leakage current in silicon particle detectors by Bleka, J. H., Murin, L., Monakhov, E. V., Avset, B. S., Svensson, B. G.

“…The annealing kinetics of the so-called E4/E5 center or E4a/E4b center in electron-irradiated Si particle detectors has been studied at four different…”
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Silicon wafer oxygenation from SiO2 layers for radiation hard detectors by Fonseca, L., Lozano, M., Campabadal, F., Martı́nez, C., Ullán, M., Avset, B.S., Ruzin, A., Lemeilleur, F., Nossarzewska-Orlowska, E.

“…Radiation produces lattice damage in silicon by displacing the atoms from their original positions and thereby generating the corresponding defects. As a…”
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Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon by Bleka, J. H., Pintilie, I., Monakhov, E. V., Avset, B. S., Svensson, B. G.

“…In hydrogenated high-purity Si, the vacancy-oxygen (VO) center is shown to anneal already at temperatures below 200 deg. C and is replaced by a center,…”
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Divacancy annealing in Si: Influence of hydrogen by Monakhov, E. V., Ulyashin, A., Alfieri, G., Kuznetsov, A. Yu, Avset, B. S., Svensson, B. G.

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Room-temperature annealing of vacancy-type defect in high-purity n -type Si by Bleka, J. H., Monakhov, E. V., Svensson, B. G., Avset, B. S.

“…Electron-irradiated p{sup +}-n{sup -}-n{sup +} diodes produced from low-doped high-purity Si wafers were found, by deep-level transient spectroscopy (DLTS), to…”
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On the identity of a crucial defect contributing to leakage currentin silicon particle detectors by Bleka, J. H., Murin, L., Monakhov, E. V., Avset, B. S., Svensson, B. G.

“…The annealing kinetics of the so-called E4/E5 center or E4a/E4b center in electron-irradiated Si particle detectors has been studied at four different…”
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The I-Imas project: end-users driven specifications for the design of a novel digital medical imaging system by Galbiati, A., Metaxas, M.G., Avset, B.S., Bergamaschi, A., Cavouras, D., Evangelou, I., Fant, A., French, M.J., Georgiou, H., Hall, G., Iles, G., Li, G., Longo, R., Manthos, N., Ostby, J.M., Pani, S., Peterzol, A., Psomadellis, F., Royle, G.J., Schulerud, H., Speller, R.D., van der Stelt, P.F., Theodoridis, S., Triantis, F., Turchctta, R.

“…The I-Imas (Intelligent Imaging Sensors) is an EU project whose objective is to design and develop intelligent imaging sensors and evaluate their use within an…”
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Radiation-hard semiconductor detectors for SuperLHC by Bruzzi, M., Alfieri, G., Assouak, S., Avset, B.S., Baranova, E., Basile, A., Bisello, D., Bolla, G., Bosisio, L., V. Bowcock, T.J., Brukhanov, A., Buda, M., Buhmann, P., Campabadal, F., Campbell, D., Cavallini, A., Chren, D., Cindro, V., Collins, P., Coutinho, J., Cunningham, W., Dalla Betta, G.-F., Davies, G., Dawson, I., Dervan, P., Ferbel, T., Fizzotti, F., Fleta, C., Franchenko, S., Garcia, C., Garcia-Navarro, J.E., Glaser, M., González Sevilla, S., Grigoriev, E., Grillo, A., Groza, A., Haddad, L., Hauler, F., Horazdovsky, T., Horisberger, R., Hruban, A., Joram, C., Kalinina, E., Kaminski, P., Karpenko, A., Kazlauskiene, V., Klaiber-Lodewigs, J., Kodys, P., Krasel, O., Kuznetsov, A., Lastovetsky, V., Leroy, C., Lindstrom, L., Litovchenko, A., Litvinov, V., Lo Giudice, A., Luczynski, Z., Mainwood, A., Makarenko, L.F., Marunko, S., Mathieson, K., Menichelli, D., Miglio, S., Monakhov, E., Nava, F., Oshea, V., Parkes, C., Pein, U., Petasecca, M., Piatkowski, B., Pinho, N., Popa, A.I., Pucker, G., Rafí, J.M., Rohe, T., Ronchin, S., Rott, C., Roy, A., Ruzin, A., Ryazanov, A., Sadrozinski, H.F.W., Sakalauskas, S., Sciortino, S., Seiden, A., Sellin, P., Shipsey, I., Son, S., Strupinski, W., Surma, B., Svensson, B.G., Uebersee, H., Uher, J., Vaitkus, J.V., Vrba, V., Wilhelm, I., Worm, S., Wunstorf, R., Zaluzhny, A., Zen, M., Zorzi, N.

“…An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10 35 cm −2 s −1 has been envisaged to extend the physics reach of the…”
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Development of radiation tolerant semiconductor detectors for the Super-LHC by Moll, M., Adey, J., Artuso, M., Assouak, S., Biagi, S.F., Bilei, G.M., Bisello, D., Bortoletto, D., Boscardin, M., Bosisio, L., Broz, J., Candelori, A., Casse, G., Chilingarov, A., Cindro, V., Collins, P., Cunningham, W., Dawson, I., De Palma, M., Dittongo, S., Dolezal, Z., Dolgolenko, A., Fall, C., Fleta, C., Forton, E., Gaubas, E., Gill, K.A., Giolo, K., González Sevilla, S., Gorelov, I., Goss, J., Gouldwell Bates, A., Grégoire, G., Grigoriev, E., Grillo, A.A., Hönniger, F., Horisberger, R., Houdayer, A., Hourahine, B., Hughes, G., Irmscher, K., Ivanov, A., Joram, C., Kaminski, P., Kazukauskas, V., Khivrich, V., Khomenkov, V., Kierstead, J., Kodys, P., Korjenevski, S., Kozlowski, R., Kozodaev, M., Kuznetsov, A., Lassila-Perini, K., Lazanu, S., Litovchenko, P., Luczynski, Z., Mandić, I., Manfredotti, C., Menichelli, D., Metcalfe, J., Miglio, S., Mikuž, M., Nossarzewska-Orlowska, E., Passeri, D., Perera, L., Piemonte, C., Pignatel, G.U., Pinho, N., Pintilie, L., Polivtsev, L., Popa, A., Popule, J., Pozza, A., Rafí, J.M., Ronchin, S., Rott, C., Ruzin, A., Sciortino, S., Scorzoni, A., Seidel, S., Seiden, A., Sicho, P., Sloan, T., Sopko, V., Stahl, J., Stolze, D., Storasta, J., Surma, B., Suvorov, A., Tipton, P., Tsvetkov, A., Tuuva, T., Uebersee, H., Ullán, M., Velthuis, J., Vrba, V., Zabierowski, P., Zavrtanik, M., Zorzi, N.

“…The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10 35 cm −2 s −1 will…”
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Recent advancements in the development of radiation hard semiconductor detectors for S-LHC by Adey, J., Alfieri, G., Allport, P.P., Assouak, S., Avset, B.S., Barabash, L., Bates, R., Bilei, G.M., Bisello, D., Blue, A., Bortoletto, D., Boscardin, M., Bosisio, L., Bowcock, T.J.V., Broz, J., Candelori, A., Casse, G., Cindro, V., Collins, P., Coutinho, J., Cunningham, L., Dawson, I., De Palma, M., Demina, R., Dervan, P., Dittongo, S., Dolezal, Z., Dolgolenko, A., Eberlein, T., Fall, C., Forton, E., Garcia-Navarro, J.E., Gaubas, E., Giolo, K., Glaser, M., González Sevilla, S., Gorelov, I., Gouldwell Bates, A., Grégoire, G., Grigoriev, E., Grillo, A.A., Groza, A., Hoeferkamp, M., Hönniger, F., Horisberger, R., Horn, M., Houdayer, A., Hourahine, B., Irmscher, K., Ivanov, A., Jones, B.K., Jones, R., Joram, C., Kaminski, P., Kazukauskas, V., Khomenkov, V., Kierstead, J., Kodys, P., Kozlowski, R., Kozodaev, M., Kuznetsov, A., Lassila-Perini, K., Lazanu, S., Lozano, M., Luczynski, Z., Mandić, I., Manfredotti, C., Menichelli, D., Miglio, S., Mikuž, M., Moll, M., Monakhov, E., Nossarzewska-Orlowska, E., Pellegrini, G., Perera, L., Pignatel, G.U., Pinho, N., Pintilie, I., Radicci, V., Rafí, J.M., Rando, R., Roy, A., Sakalauskas, S., Schumm, B., Segneri, G., Solar, M., Sopko, B., Sopko, V., Spencer, N., Stone, R., Storasta, J., Tipton, P., Tomasek, M., Tuominen, E., Tuovinen, E., Tuuva, T., Velthuis, J., Vrba, V., Wilhelm, I., Worm, S.

“…The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of…”
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Silicon wafer oxygenation from SiO sub(2) layers for radiation hard detectors by Fonseca, L, Lozano, M, Campabadal, F, Martinez, C, Ullan, M, Avset, B S, Ruzin, A, Lemeilleur, F, Nossarzewska-Orlowska, E

“…Radiation produces lattice damage in silicon by displacing the atoms from their original positions and thereby generating the corresponding detects. As a…”
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