Search Results - "Avsar, Ahmet"

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  1. 1

    Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide by Ciarrocchi, Alberto, Avsar, Ahmet, Ovchinnikov, Dmitry, Kis, Andras

    Published in Nature communications (02-03-2018)
    “…The possibility of tailoring physical properties by changing the number of layers in van der Waals crystals is one of the driving forces behind the emergence…”
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  2. 2

    Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures by Ciarrocchi, Alberto, Unuchek, Dmitrii, Avsar, Ahmet, Watanabe, Kenji, Taniguchi, Takashi, Kis, Andras

    Published in Nature photonics (01-02-2019)
    “…The long-lived interlayer excitons in van der Waals heterostructures based on transition-metal dichalcogenides, together with unique spin–valley physics, make…”
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  3. 3

    Valley-polarized exciton currents in a van der Waals heterostructure by Unuchek, Dmitrii, Ciarrocchi, Alberto, Avsar, Ahmet, Sun, Zhe, Watanabe, Kenji, Taniguchi, Takashi, Kis, Andras

    Published in Nature nanotechnology (01-12-2019)
    “…Valleytronics is an appealing alternative to conventional charge-based electronics that aims at encoding data in the valley degree of freedom, that is, the…”
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  4. 4

    Logic-in-memory based on an atomically thin semiconductor by Migliato Marega, Guilherme, Zhao, Yanfei, Avsar, Ahmet, Wang, Zhenyu, Tripathi, Mukesh, Radenovic, Aleksandra, Kis, Andras

    Published in Nature (London) (05-11-2020)
    “…The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with…”
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  5. 5

    Defect induced, layer-modulated magnetism in ultrathin metallic PtSe2 by Avsar, Ahmet, Ciarrocchi, Alberto, Pizzochero, Michele, Unuchek, Dmitrii, Yazyev, Oleg V., Kis, Andras

    Published in Nature nanotechnology (01-07-2019)
    “…Defects are ubiquitous in solids and often introduce new properties that are absent in pristine materials. One of the opportunities offered by these crystal…”
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  6. 6

    Direct observation of water-mediated single-proton transport between hBN surface defects by Comtet, Jean, Grosjean, Benoit, Glushkov, Evgenii, Avsar, Ahmet, Watanabe, Kenji, Taniguchi, Takashi, Vuilleumier, Rodolphe, Bocquet, Marie-Laure, Radenovic, Aleksandra

    Published in Nature nanotechnology (01-07-2020)
    “…Aqueous proton transport at interfaces is ubiquitous and crucial for a number of fields, ranging from cellular transport and signalling, to catalysis and…”
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  7. 7

    Probing magnetism in atomically thin semiconducting PtSe2 by Avsar, Ahmet, Cheon, Cheol-Yeon, Pizzochero, Michele, Tripathi, Mukesh, Ciarrocchi, Alberto, Yazyev, Oleg V., Kis, Andras

    Published in Nature communications (23-09-2020)
    “…Atomic-scale disorder in two-dimensional transition metal dichalcogenides is often accompanied by local magnetic moments, which can conceivably induce…”
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  8. 8

    Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors by Avsar, Ahmet, Vera-Marun, Ivan J, Tan, Jun You, Watanabe, Kenji, Taniguchi, Takashi, Castro Neto, Antonio H, Özyilmaz, Barbaros

    Published in ACS nano (28-04-2015)
    “…The presence of direct bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future…”
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  9. 9

    Resolving the spin splitting in the conduction band of monolayer MoS2 by Marinov, Kolyo, Avsar, Ahmet, Watanabe, Kenji, Taniguchi, Takashi, Kis, Andras

    Published in Nature communications (05-12-2017)
    “…Time-reversal symmetry and broken spin degeneracy enable the exploration of spin and valley quantum degrees of freedom in monolayer transition-metal…”
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  10. 10

    Electrical spectroscopy of defect states and their hybridization in monolayer MoS2 by Zhao, Yanfei, Tripathi, Mukesh, Čerņevičs, Kristiāns, Avsar, Ahmet, Ji, Hyun Goo, Gonzalez Marin, Juan Francisco, Cheon, Cheol-Yeon, Wang, Zhenyu, Yazyev, Oleg V., Kis, Andras

    Published in Nature communications (03-01-2023)
    “…Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of…”
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  11. 11

    Toward Wafer Scale Fabrication of Graphene Based Spin Valve Devices by Avsar, Ahmet, Yang, Tsung-Yeh, Bae, Sukang, Balakrishnan, Jayakumar, Volmer, Frank, Jaiswal, Manu, Yi, Zheng, Ali, Syed Rizwan, Güntherodt, Gernot, Hong, Byung Hee, Beschoten, Bernd, Özyilmaz, Barbaros

    Published in Nano letters (08-06-2011)
    “…We demonstrate injection, transport, and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized…”
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  12. 12

    Electronic spin transport in dual-gated bilayer graphene by Avsar, Ahmet, Vera-Marun, Ivan Jesus, Tan, Jun You, Koon, Gavin Kok Wai, Watanabe, Kenji, Taniguchi, Takashi, Adam, Shaffique, Özyilmaz, Barbaros

    Published in NPG Asia materials (01-06-2016)
    “…The elimination of extrinsic sources of spin relaxation is key to realizing the exceptional intrinsic spin transport performance of graphene. Toward this, we…”
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  13. 13

    Highly anisotropic van der Waals magnetism by Avsar, Ahmet

    Published in Nature materials (01-07-2022)
    “…Ultrathin CrSBr, a two-dimensional magnet, has been shown to exhibit very rich magnetic behaviours, from an unexpected magnetic order to optical emissions…”
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  14. 14

    Room-temperature electrical control of exciton flux in a van der Waals heterostructure by Unuchek, Dmitrii, Ciarrocchi, Alberto, Avsar, Ahmet, Watanabe, Kenji, Taniguchi, Takashi, Kis, Andras

    Published in Nature (London) (01-08-2018)
    “…Devices that rely on the manipulation of excitons—bound pairs of electrons and holes—hold great promise for realizing efficient interconnects between optical…”
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  15. 15

    Excitonic devices with van der Waals heterostructures: valleytronics meets twistronics by Ciarrocchi, Alberto, Tagarelli, Fedele, Avsar, Ahmet, Kis, Andras

    Published in Nature reviews. Materials (31-01-2022)
    “…2D semiconducting transition metal dichalcogenides comprise an emerging class of materials with distinct properties, including large exciton binding energies…”
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  16. 16

    Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes by Avsar, Ahmet, Tan, Jun Y., Kurpas, Marcin, Gmitra, Martin, Watanabe, Kenji, Taniguchi, Takashi, Fabian, Jaroslav, Özyilmaz, Barbaros

    Published in Nature physics (01-09-2017)
    “…Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron’s spin. Although…”
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  17. 17

    Optospintronics in Graphene via Proximity Coupling by Avsar, Ahmet, Unuchek, Dmitrii, Liu, Jiawei, Sanchez, Oriol Lopez, Watanabe, Kenji, Taniguchi, Takashi, Özyilmaz, Barbaros, Kis, Andras

    Published in ACS nano (28-11-2017)
    “…The observation of micrometer size spin relaxation makes graphene a promising material for applications in spintronics requiring long-distance spin…”
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  18. 18

    Highly anisotropic spin transport in ultrathin black phosphorus by Cording, Luke, Liu, Jiawei, Tan, Jun You, Watanabe, Kenji, Taniguchi, Takashi, Avsar, Ahmet, Özyilmaz, Barbaros

    Published in Nature materials (01-04-2024)
    “…In anisotropic crystals, the direction-dependent effective mass of carriers can have a profound impact on spin transport dynamics. The puckered crystal…”
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  19. 19

    Engineering Optically Active Defects in Hexagonal Boron Nitride Using Focused Ion Beam and Water by Glushkov, Evgenii, Macha, Michal, Räth, Esther, Navikas, Vytautas, Ronceray, Nathan, Cheon, Cheol Yeon, Ahmed, Aqeel, Avsar, Ahmet, Watanabe, Kenji, Taniguchi, Takashi, Shorubalko, Ivan, Kis, Andras, Fantner, Georg, Radenovic, Aleksandra

    Published in ACS nano (22-03-2022)
    “…Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically active defects with…”
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  20. 20

    van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices by Avsar, Ahmet, Tan, Jun Y, Luo, Xin, Khoo, Khoong Hong, Yeo, Yuting, Watanabe, Kenji, Taniguchi, Takashi, Quek, Su Ying, Özyilmaz, Barbaros

    Published in Nano letters (13-09-2017)
    “…Because of the chemical inertness of two dimensional (2D) hexagonal-boron nitride (h-BN), few atomic-layer h-BN is often used to encapsulate air-sensitive 2D…”
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