Search Results - "Avrutin, V.S."

Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge + ions by Avrutin, V.S., Izyumskaya, N.F., Vyatkin, A.F., Zinenko, V.I., Agafonov, Yu.A., Irzhak, D.V., Roshchupkin, D.V., Steinman, E.A., Vdovin, V.I., Yugova, T.G.

“…Pseudomorphic Si 0.76Ge 0.24/Si heterostructures grown by molecular beam epitaxy were implanted with Ge + ions at 400 °C in such a way that an ion-damaged…”
Get full text

Low-temperature strain relaxation in ion-irradiated pseudomorphic SiGe/Si structures by Avrutin, V.S, Izyumskaya, N.F, Vyatkin, A.F, Zinenko, V.I, Agafonov, Yu.A, Irzhak, D.V, Roshchupkin, D.V, Steinman, E.A, Vdovin, V.I, Yugova, T.G

“…The effect of non-equilibrium point defects on strain relaxation in pseudomorphic Si 0.76Ge 0.24/Si heterostructures was studied by X-ray diffraction (XRD) and…”
Get full text

Effect of annealing environment on antimony redistribution in pseudomorphic Si/SiGe/Si〈Sb〉 heterostructures by Avrutin, V.S., Barabanenkov, M.Yu, Izyumskaya, N.F., Pustovit, A.N., Vyatkin, A.F., Loiko, N.N.

“…Sb redistribution in an MBE-grown strained Si/Si 0.85Ge 0.15/Si〈Sb〉 heterostructure was studied by secondary ion mass-spectrometry. Two types of annealing…”
Get full text

Silicon molecular beam epitaxial growth on ultra-small mesa structures by Avrutin, V.S., Izumskaya, N.F., Vyatkin, A.F., Yunkin, V.A.

“…The effect of temperature and deposition rate on faceting of local silicon epitaxial structures in the temperature range 450–900°C was studied. Epitaxial…”
Get full text

Causes of cracking of vacuum deposited thick amorphous silicon film by Avrutin, V.S., Izumskaya, N.F., Hartman, Y.M., Andreeva, A.V., Vyatkin, A.F., Melnik, N.N.

“…Cracking of thick amorphous silicon films deposited in ultra high vacuum on crystalline substrates was investigated. It was found that microvoids occurring in…”
Get full text

Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers by Vyarkin, A.F., Avrutin, V.S., Izyumskaya, N.F., Egorov, V.K., Starkov, V.V., Zinenko, V.I., Smirnova, I.A., Hemment, P.L.F., Nejim, A., Vdovin, V.I., Yugova, T.G.

“…The effects of irradiation with Ge/sup +/ and Ar/sup +/ ions at elevated temperatures on the relaxation behavior of pseudomorphic Si/sub 0.79/Ge/sub 0.21//Si…”
Get full text