Search Results - "Avramescu, Adrian"

Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures by Krieg, Linus, Meierhofer, Florian, Gorny, Sascha, Leis, Stefan, Splith, Daniel, Zhang, Zhipeng, von Wenckstern, Holger, Grundmann, Marius, Wang, Xiaoxue, Hartmann, Jana, Margenfeld, Christoph, Manglano Clavero, Irene, Avramescu, Adrian, Schimpke, Tilman, Scholz, Dominik, Lugauer, Hans-Jürgen, Strassburg, Martin, Jungclaus, Jörgen, Bornemann, Steffen, Spende, Hendrik, Waag, Andreas, Gleason, Karen K., Voss, Tobias

“…The combination of inorganic semiconductors with organic thin films promises new strategies for the realization of complex hybrid optoelectronic devices…”
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500 nm electrically driven InGaN based laser diodes by Queren, Désirée, Avramescu, Adrian, Brüderl, Georg, Breidenassel, Andreas, Schillgalies, Marc, Lutgen, Stephan, Strauß, Uwe

“…Based on recent improvements of growth of In-rich InGaN quantum wells with low defect density, we demonstrate current driven InGaN laser diodes at wavelengths…”
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Quality and thermal stability of thin InGaN films by Queren, Désirée, Schillgalies, Marc, Avramescu, Adrian, Brüderl, Georg, Laubsch, Ansgar, Lutgen, Stephan, Strauß, Uwe

“…Laser diodes with InGaN quantum wells emitting at long wavelengths are required for the application in compact laser projection. However, quantum wells with…”
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True green InGaN laser diodes by Lutgen, Stephan, Avramescu, Adrian, Lermer, Teresa, Queren, Desiree, Müller, Jens, Bruederl, Georg, Strauss, Uwe

“…We present true green InGaN ridge waveguide (RWG) laser diodes (LDs) at 520 nm on c‐plane GaN substrates in pulse operation at room temperature. Defect…”
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Pros and cons of green InGaN laser on c-plane GaN by Strauß, Uwe, Avramescu, Adrian, Lermer, Teresa, Queren, Désirée, Gomez-Iglesias, Alvaro, Eichler, Christoph, Müller, Jens, Brüderl, Georg, Lutgen, Stephan

“…The challenges of green InGaN lasers are discussed concerning material quality as a function of InGaN composition, quantum well design and piezoelectrical…”
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Study of defects and lifetime of green InGaN laser diodes by Strauss, Uwe, Lermer, Teresa, Müller, Jens, Hager, Thomas, Brüderl, Georg, Avramescu, Adrian, Lell, Alfred, Eichler, Christoph

“…InGaN quantum wells for direct green lasers with indium concentrations of about 30% are studied in respect to defect structure and influence of defects on…”
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Waveguide design of green InGaN laser diodes by Lermer, Teresa, Schillgalies, Marc, Breidenassel, Andreas, Queren, Désirée, Eichler, Christoph, Avramescu, Adrian, Müller, Jens, Scheibenzuber, Wolfgang, Schwarz, Ulrich, Lutgen, Stephan, Strauss, Uwe

“…In this paper we investigate the waveguiding (WG) of direct green InGaN laser diodes grown on c‐plane GaN substrates. The problem of parasitic modes emerges…”
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Size-Dependent Electroluminescence and Current-Voltage Measurements of Blue InGaN/GaN µLEDs down to the Submicron Scale by Wolter, Stefan, Spende, Hendrik, Gülink, Jan, Hartmann, Jana, Wehmann, Hergo-Heinrich, Waag, Andreas, Lex, Andreas, Avramescu, Adrian, Lugauer, Hans-Jürgen, Malm, Norwin von, Drolet, Jean-Jacques, Strassburg, Martin

“…Besides high-power light-emitting diodes (LEDs) with dimensions in the range of mm, micro-LEDs (μLEDs) are increasingly gaining interest today, motivated by…”
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Investigation of long wavelength green InGaN lasers on c-plane GaN up to 529 nm continuous wave operation by Müller, Jens, Strauß, Uwe, Lermer, Teresa, Brüderl, Georg, Eichler, Christoph, Avramescu, Adrian, Lutgen, Stephan

“…We present analysis of the experimentally determined gain coefficients g0 for green InGaN lasers with pulsed wavelengths from 495 to 526 nm. Variable facet…”
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Interdependency of surface morphology and wavelength fluctuations of indium-rich InGaN/GaN quantum wells by Lermer, Teresa, Pietzonka, Ines, Avramescu, Adrian, Brüderl, Georg, Müller, Jens, Lutgen, Stephan, Strauss, Uwe

“…The origin of indium fluctuations in indium‐rich quantum wells (QWs) is of high interest for direct green laser diodes. We present the correlation of…”
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Nucleation and growth kinetics of AlN films on atomically smooth 6H–SiC (0001) surfaces by Yamada, Satoshi, Kato, Jun-ichi, Tanaka, Satoru, Suemune, Ikuo, Avramescu, Adrian, Aoyagi, Yoshinobu, Teraguchi, Nobuaki, Suzuki, Akira

“…Nucleation and growth kinetics of AlN films on atomically smooth 6H–SiC (0001) surfaces, which were obtained by HCl etching at elevated temperatures prior to…”
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Role of pixel design and emission wavelength on the light extraction of nitride-based micro-LEDs by Vögl, Florian, Avramescu, Adrian, Knorr, Fabian, Lex, Andreas, Waag, Andreas, Hetzl, Martin, von Malm, Norwin

“…Micro-light emitting diodes (µ-LEDs) suffer from a drastic drop in internal quantum efficiency that emerges with the miniaturization of pixels down to the…”
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Optical characteristics of thin film-based InGaN micro-LED arrays: a study on size effect and far field behavior by Vögl, Florian, Avramescu, Adrian, Gelfert, Sven, Lex, Andreas, Waag, Andreas, Hetzl, Martin, von Malm, Norwin

“…Micro-light emitting diodes (µ-LEDs) are considered the key enabler for various high-resolution micro-display applications such as augmented reality,…”
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Nucleation and Faceting in Selectively Grown ZnS Pyramidal Dot Array for Short-Wavelength Light Emitters by Akio Ueta, Akio Ueta, Adrian Avramescu, Adrian Avramescu, Ikuo Suemune, Ikuo Suemune, Hideaki Machida, Hideaki Machida, Norio Shimoyama, Norio Shimoyama

“…A ZnS dot array was selectively grown on (001) GaAs using metalorganic molecular-beam epitaxy. The ZnS dot array has smooth facets and excellent uniformity. To…”
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Self-organized CdSe quantum dots on (100)ZnSe/GaAs surfaces grown by metalorganic molecular beam epitaxy by ARITA, M, AVRAMESCU, A, UESUGI, K, SUEMUNE, I, NUMAI, T, MACHIDA, H, SHIMOYAMA, N

“…II–VI semiconductor low-dimensional structures, quantum dots, have been grown on GaAs substrates by metalorganic molecular beam epitaxy (MOMBE). Before the…”
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Photoluminescence of planar and 3D InGaN/GaN LED structures excited with femtosecond laser pulses close to the damage threshold by Jaros, Angelina, Hartmann, Jana, Zhou, Hao, Szafranski, Barbara, Strassburg, Martin, Avramescu, Adrian, Waag, Andreas, Voss, Tobias

“…We study the photoluminescence emission from planar and 3D InGaN/GaN LED structures, excited using a femtosecond laser with fluences close to sample’s damage…”
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Measurement of specimen thickness and composition in AlxGa1-xN/GaN using high-angle annular dark field images by Rosenauer, Andreas, Gries, Katharina, Müller, Knut, Pretorius, Angelika, Schowalter, Marco, Avramescu, Adrian, Engl, Karl, Lutgen, Stephan

“…In scanning transmission electron microscopy using a high-angle annular dark field detector, image intensity strongly depends on specimen thickness and…”
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Atomic force microscope lithography on carbonaceous films deposited by electron-beam irradiation by Avramescu, Adrian, Ueta, Akio, Uesugi, Katsuhiro, Suemune, Ikuo

“…A nanometer-scale mask that can be used for selective growth or selective etching was obtained by two-stage patterning. In the first step, a microscopic…”
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InGaN laser diodes with 50 mW output power emitting at 515 nm by Avramescu, Adrian, Lermer, Teresa, Müller, Jens, Tautz, Sönke, Queren, Désirée, Lutgen, Stephan, Strauß, Uwe

“…We demonstrate direct green laser operation from InGaN based diodes at wavelengths as long as 515.9 nm with 50 mW output power in pulse operation. A factor of…”
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Nucleation in the Nanometer Scale Selective Area Growth of II-VI Semiconductors by Adrian Avramescu, Adrian Avramescu, Akio Ueta, Akio Ueta, Katsuhiro Uesugi, Katsuhiro Uesugi, Ikuo Suemune, Ikuo Suemune

“…Nanometer-scale selective area growth of ZnS and ZnSe was investigated. The growth was performed by metalorganic molecular-beam epitaxy (MOMBE) on a…”
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