Search Results - "Autruffe, Antoine"

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  1. 1

    Dislocation generation at near-coincidence site lattice grain boundaries during silicon directional solidification by Autruffe, Antoine, Stenhjem Hagen, Vegard, Arnberg, Lars, Di Sabatino, Marisa

    Published in Journal of crystal growth (01-02-2015)
    “…Bi-crystal silicon ingots separated by near-coincident site lattice (near-CSL) grain boundaries (GBs), namely Σ9 and Σ27a, have been grown in a small scale…”
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    Journal Article
  2. 2

    The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon by Autruffe, Antoine, Kivambe, Maulid, Arnberg, Lars, Di Sabatino, Marisa

    “…We have investigated the source of dislocations generated during growth and subsequent cooling of quasi‐monocrystalline silicon. Bi‐crystals of silicon…”
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    Journal Article
  3. 3

    High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects by Castellanos, Sergio, Ekstrom, Kai E., Autruffe, Antoine, Jensen, Mallory A., Morishige, Ashley E., Hofstetter, Jasmin, Yen, Patricia, Lai, Barry, Stokkan, Gaute, del Canizo, Carlos, Buonassisi, Tonio

    Published in IEEE journal of photovoltaics (01-05-2016)
    “…In recent years, high-performance multicrystalline silicon (HPMC-Si) has emerged as an attractive alternative to traditional ingot-based multicrystalline…”
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    Journal Article
  4. 4

    Impact of growth rate on impurities segregation at grain boundaries in silicon during Bridgman growth by Autruffe, Antoine, Vines, Lasse, Arnberg, Lars, Di Sabatino, Marisa

    Published in Journal of crystal growth (01-06-2013)
    “…Bi-crystal silicon ingots with low angle grain boundaries have been grown at three different pulling rates, namely 3µm/s, 13µm/s and 40µm/s, in a small scale…”
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    Journal Article
  5. 5

    Influence of pulling rate on multicrystalline silicon ingots' properties by Autruffe, Antoine, Søndenå, Rune, Vines, Lasse, Arnberg, Lars, Di Sabatino, Marisa

    Published in Journal of crystal growth (2014)
    “…In this study, the influence of pulling rate on lifetime and impurity distribution in multicrystalline silicon has been investigated. Ingots have been pulled…”
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    Journal Article
  6. 6

    The nature of a low angle grain boundary in a Si bi-crystal with added Fe impurities by Mørtsell, Eva A., Zhao, Dongdong, Autruffe, Antoine, Chen, Yimeng, Sabatino, Marisa Di, Li, Yanjun

    Published in Acta materialia (15-06-2023)
    “…Silicon solar cell performance can be severely degraded when low-angle grain boundaries and impurities are present in the material. These two factors often…”
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    Journal Article
  7. 7

    Coincident site lattice bi-crystals growth—Impurity segregation towards grain boundaries by Autruffe, Antoine, Vines, Lasse, Arnberg, Lars, Di Sabatino, Marisa

    Published in Journal of crystal growth (15-04-2015)
    “…Bi-crystal silicon ingots with coincident site lattice (CSL) grain boundaries (GB), namely Σ3, Σ9, Σ27a, have been grown in a small scale Bridgman type furnace…”
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    Journal Article
  8. 8

    Impurity control in high performance multicrystalline silicon by Stokkan, Gaute, Marisa, Di Sabatino, Søndenå, Rune, Juel, Mari, Autruffe, Antoine, Adamczyk, Krzysztof, Skarstad, Hanna Vaksvik, Ekstrøm, Kai Erik, Wiig, Marie Syre, You, Chang Chuan, Haug, Halvard, M‘Hamdi, Mohammed

    “…We report results from a national project about impurities in high performance multicrystalline silicon: Contamination sources, transport routes, interaction…”
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    Journal Article
  9. 9

    Electromagnetic stirring and retention to improve segregation in silicon for photovoltaics by Santara, Fatoumata, Delannoy, Yves, Autruffe, Antoine

    Published in Journal of crystal growth (01-02-2012)
    “…The segregation of impurities was investigated during the crystallization of upgraded metallurgical grade silicon (UMG Si). An experimental solidification…”
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    Journal Article
  10. 10

    Effect of Grain Orientation and Cooling Rate on Stress Distribution in a Small-scale Silicon Ingot by Gouttebroze, Sylvain, Autruffe, Antoine, Aas, Lars Martin Sandvik, Kildemo, Morten, Ma, Xiang

    “…Small-scale solidification simulations were carried out in order to study the effect of the grain orientation and cooling rate on the stresses in mono- and…”
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    Journal Article
  11. 11

    Indentation Behaviour of Interlocked Structures Made of Ice: Influence of the Friction Coefficient by Autruffe, A., Pelloux, F., Brugger, C., Duval, P., Bréchet, Y., Fivel, M.

    Published in Advanced engineering materials (01-08-2007)
    “…Planar assemblies of osteomorphic blocks made of ice have been tested in indentation loading. The interlocked structure is shown to dissipate mechanical energy…”
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  12. 12