Search Results - "Autruffe, Antoine"
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Dislocation generation at near-coincidence site lattice grain boundaries during silicon directional solidification
Published in Journal of crystal growth (01-02-2015)“…Bi-crystal silicon ingots separated by near-coincident site lattice (near-CSL) grain boundaries (GBs), namely Σ9 and Σ27a, have been grown in a small scale…”
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The impact of oxygen precipitation on dislocation generation at small angle grain boundaries during seed-assisted directional solidification of silicon
Published in Physica status solidi. A, Applications and materials science (01-01-2016)“…We have investigated the source of dislocations generated during growth and subsequent cooling of quasi‐monocrystalline silicon. Bi‐crystals of silicon…”
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High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects
Published in IEEE journal of photovoltaics (01-05-2016)“…In recent years, high-performance multicrystalline silicon (HPMC-Si) has emerged as an attractive alternative to traditional ingot-based multicrystalline…”
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Impact of growth rate on impurities segregation at grain boundaries in silicon during Bridgman growth
Published in Journal of crystal growth (01-06-2013)“…Bi-crystal silicon ingots with low angle grain boundaries have been grown at three different pulling rates, namely 3µm/s, 13µm/s and 40µm/s, in a small scale…”
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Influence of pulling rate on multicrystalline silicon ingots' properties
Published in Journal of crystal growth (2014)“…In this study, the influence of pulling rate on lifetime and impurity distribution in multicrystalline silicon has been investigated. Ingots have been pulled…”
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The nature of a low angle grain boundary in a Si bi-crystal with added Fe impurities
Published in Acta materialia (15-06-2023)“…Silicon solar cell performance can be severely degraded when low-angle grain boundaries and impurities are present in the material. These two factors often…”
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Coincident site lattice bi-crystals growth—Impurity segregation towards grain boundaries
Published in Journal of crystal growth (15-04-2015)“…Bi-crystal silicon ingots with coincident site lattice (CSL) grain boundaries (GB), namely Σ3, Σ9, Σ27a, have been grown in a small scale Bridgman type furnace…”
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Impurity control in high performance multicrystalline silicon
Published in Physica status solidi. A, Applications and materials science (01-07-2017)“…We report results from a national project about impurities in high performance multicrystalline silicon: Contamination sources, transport routes, interaction…”
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Electromagnetic stirring and retention to improve segregation in silicon for photovoltaics
Published in Journal of crystal growth (01-02-2012)“…The segregation of impurities was investigated during the crystallization of upgraded metallurgical grade silicon (UMG Si). An experimental solidification…”
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Effect of Grain Orientation and Cooling Rate on Stress Distribution in a Small-scale Silicon Ingot
Published in Metallurgical and materials transactions. E, Materials for energy systems (01-06-2014)“…Small-scale solidification simulations were carried out in order to study the effect of the grain orientation and cooling rate on the stresses in mono- and…”
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Indentation Behaviour of Interlocked Structures Made of Ice: Influence of the Friction Coefficient
Published in Advanced engineering materials (01-08-2007)“…Planar assemblies of osteomorphic blocks made of ice have been tested in indentation loading. The interlocked structure is shown to dissipate mechanical energy…”
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Indentation Behaviour of Interlocked StructuresMade of Ice: Influence of the Friction Coefficient
Published in Advanced engineering materials (2007)Get full text
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