Search Results - "Auth, C."

A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors by Auth, C., Allen, C., Blattner, A., Bergstrom, D., Brazier, M., Bost, M., Buehler, M., Chikarmane, V., Ghani, T., Glassman, T., Grover, R., Han, W., Hanken, D., Hattendorf, M., Hentges, P., Heussner, R., Hicks, J., Ingerly, D., Jain, P., Jaloviar, S., James, R., Jones, D., Jopling, J., Joshi, S., Kenyon, C., Liu, H., McFadden, R., McIntyre, B., Neirynck, J., Parker, C., Pipes, L., Post, I., Pradhan, S., Prince, M., Ramey, S., Reynolds, T., Roesler, J., Sandford, J., Seiple, J., Smith, P., Thomas, C., Towner, D., Troeger, T., Weber, C., Yashar, P., Zawadzki, K., Mistry, K.

“…A 22nm generation logic technology is described incorporating fully-depleted tri-gate transistors for the first time. These transistors feature a 3 rd…”
Get full text

A logic nanotechnology featuring strained-silicon by Thompson, S.E., Armstrong, M., Auth, C., Cea, S., Chau, R., Glass, G., Hoffman, T., Klaus, J., Zhiyong Ma, Mcintyre, B., Murthy, A., Obradovic, B., Shifren, L., Sivakumar, S., Tyagi, S., Ghani, T., Mistry, K., Bohr, M., El-Mansy, Y.

“…Strained-silicon (Si) is incorporated into a leading edge 90-nm logic technology . Strained-Si increases saturated n-type and p-type metal-oxide-semiconductor…”
Get full text

Intrinsic transistor reliability improvements from 22nm tri-gate technology by Ramey, S., Ashutosh, A., Auth, C., Clifford, J., Hattendorf, M., Hicks, J., James, R., Rahman, A., Sharma, V., St. Amour, A., Wiegand, C.

“…This paper highlights the intrinsic reliability capabilities of Intel's 22nm process technology, which introduced the tri-gate transistor architecture and…”
Get full text

A 90-nm logic technology featuring strained-silicon by Thompson, S.E., Armstrong, M., Auth, C., Alavi, M., Buehler, M., Chau, R., Cea, S., Ghani, T., Glass, G., Hoffman, T., Jan, C.-H., Kenyon, C., Klaus, J., Kuhn, K., Zhiyong Ma, Mcintyre, B., Mistry, K., Murthy, A., Obradovic, B., Nagisetty, R., Phi Nguyen, Sivakumar, S., Shaheed, R., Shifren, L., Tufts, B., Tyagi, S., Bohr, M., El-Mansy, Y.

“…A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl…”
Get full text

A Reliability Overview of Intel's 10+ Logic Technology by Grover, R., Acosta, T., AnDyke, C., Armagan, E., Auth, C., Chugh, S., Downes, K., Hattendorf, M., Jack, N., Joshi, S., Kasim, R., Leatherman, G., Lee, S.-H., Lin, C.-Y., Madhavan, A., Mao, H., Lowrie, A., Martin, G., McPherson, G., Nayak, P., Neale, A., Nminibapiel, D., Orr, B., Palmer, J., Pelto, C., Poon, S. S., Post, I., Pramanik, T., Rahman, A., Ramey, S., Seifert, N., Sethi, K., Schmitz, A., Wu, H., Yeoh, A.

“…We provide a comprehensive overview of the reliability characteristics of Intel's 10+ logic technology. This is a 10 nm technology featuring the third…”
Get full text

Reliability Characteristics of a High Density Metal- Insulator-Metal Capacitor on Intel's 10+ Process by Lin, C.-Y., Avci, U. E., Blount, M. A., Grover, R., Hicks, J., Kasim, R., Kundu, A., Pelto, C. M., Ryder, C., Schmitz, A., Sethi, K., Seghete, D., Towner, D. J., Welsh, A. J., Weber, J., Auth, C.

“…We present a high density MIM decoupling capacitor that enables improved microprocessor performance by providing robust on-chip power supply droop reduction…”
Get full text

Threshold in the Stopping of Slow Protons Scattered from the Surface of a Wide-Band-Gap Insulator by Auth, C., Mertens, A., Winter, H., Borisov, A.

Get full text

High fractions of negative ions in grazing scattering of fast oxygen atoms from a LiF(100) surface by Auth, C, Borisov, AG, Winter, H

Get full text

A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate and cobalt local interconnects by Auth, C., Aliyarukunju, A., Asoro, M., Bergstrom, D., Bhagwat, V., Birdsall, J., Bisnik, N., Buehler, M., Chikarmane, V., Ding, G., Fu, Q., Gomez, H., Han, W., Hanken, D., Haran, M., Hattendorf, M., Heussner, R., Hiramatsu, H., Ho, B., Jaloviar, S., Jin, I., Joshi, S., Kirby, S., Kosaraju, S., Kothari, H., Leatherman, G., Lee, K., Leib, J., Madhavan, A., Marla, K., Meyer, H., Mule, T., Parker, C., Parthasarathy, S., Pelto, C., Pipes, L., Post, I., Prince, M., Rahman, A., Rajamani, S., Saha, A., Santos, J. Dacuna, Sharma, M., Sharma, V., Shin, J., Sinha, P., Smith, P., Sprinkle, M., St. Amour, A., Staus, C., Suri, R., Towner, D., Tripathi, A., Tura, A., Ward, C., Yeoh, A.

“…A 10nm logic technology using 3rd-generation FinFET transistors with Self-Aligned Quad Patterning (SAQP) for critical patterning layers, and cobalt local…”
Get full text

Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology by Mistry, K., Armstrong, M., Auth, C., Cea, S., Coan, T., Ghani, T., Hoffmann, T., Murthy, A., Sandford, J., Shaheed, R., Zawadzki, K., Zhang, K., Thompson, S., Bohr, M.

“…We describe the device physics of uniaxial strained silicon transistors. Uniaxial strain is more effective, less costly and easier to implement. The highest…”
Get full text

Charge State Dependence of the Energy Loss of Slow Ions in Metals by Juaristi, J. I., Arnau, A., Echenique, P. M., Auth, C., Winter, H.

Get full text

Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's by Auth, C.P., Plummer, J.D.

“…We present a scaling theory for fully-depleted, cylindrical MOSFET's. This theory was derived from the cylindrical form of Poisson's equation by assuming a…”
Get full text

Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress by Shifren, L., Wang, X., Matagne, P., Obradovic, B., Auth, C., Cea, S., Ghani, T., He, J., Hoffman, T., Kotlyar, R., Ma, Z., Mistry, K., Nagisetty, R., Shaheed, R., Stettler, M., Weber, C., Giles, M. D.

“…Recent attention has been given to metal–oxide–semiconductor field-effect transistor (MOSFET) device designs that utilize stress to achieve performance gain in…”
Get full text

Image acceleration of highly charged xenon ions in front a metal surface by WINTER, H, AUTH, C, SCHUCH, R, BEEBE, E

Get full text

Unexpected behavior of the stopping of slow ions in ionic crystals by Juaristi, JI, Auth, C, Winter, H, Arnau, A, Eder, K, Semrad, D, Aumayr, F, Bauer, P, Echenique, PM

“…The energy loss of slow ions during grazing scattering from a LiF(100) surface as a function of the projectile atomic number Z1 is observed to show…”
Get full text

Electronic processes during impact of fast hydrogen atoms on a LiF( [formula omitted]) surface by Winter, H., Mertens, A., Lederer, S., Auth, C., Aumayr, F., Winter, HP

“…We present an analysis of data obtained in coincident studies on projectile energy loss and number distributions of emitted electrons for scattering of…”
Get full text

Image charge acceleration of multicharged ions in front of the surface of an insulator by Auth, C, Hecht, T, Igel, T, Winter, H

Get full text

Multigrid solution of convection problems with strongly variable viscosity by Auth, C., Harder, H.

“…We investigate the robustness and efficiency of various multigrid (MG) algorithms used for simulation of thermal convection with strongly variable viscosity…”
Get full text

Resonant Coherent Excitation of Fast Hydrogen Atoms in Front of a LiF(001) Surface by Auth, C., Mertens, A., Winter, H., Borisov, A. G., García de Abajo, F. J.

Get full text

Energy Loss and Charge Fractions of Multicharged Chlorine Ions after Grazing Scattering from an Al(111) Surface by Auth, C, Winter, H

Get full text