Search Results - "Austin, Dustin Z"

Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor by Austin, Dustin Z, Jenkins, Melanie A, Allman, Derryl, Hose, Sallie, Price, David, Dezelah, Charles L, Conley, John F

“…Atomic layer deposition (ALD) processes are reported for ruthenium (Ru) and ruthenium oxide (RuO2) using a zero-oxidation state liquid precursor,…”
Get full text

Laminate Al2O3/Ta2O5 Metal/Insulator/Insulator/Metal (MIIM) Devices for High-Voltage Applications by Jenkins, Melanie A., Austin, Dustin Z., Holden, Konner E. K., Allman, Derryl, Conley, John F.

“…We evaluate for high-voltage (HV) applications a series of metal/insulator/insulator/metal (MIIM) devices with relatively thick asymmetric Al 2 O 3 /Ta 2 O 5…”
Get full text

Correction to Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero Oxidation State Precursor by Austin, Dustin Z, Jenkins, Melanie A, Allman, Derryl, Hose, Sallie, Price, David, Dezelah, Charles L, Conley, John F

Get full text

Assessment of Energy Barriers Between ZrCuAlNi Amorphous Metal and Atomic Layer Deposition Insulators Using Internal Photoemission Spectroscopy by Jenkins, Melanie A., Klarr, Tyler, Austin, Dustin Z., Li, Wei, Nguyen, Nhan V., Conley, John F.

“…The energy barrier heights between an ultra‐smooth amorphous metal electrode, ZrCuAlNi, and several atomic layer deposited (ALD) insulators are measured using…”
Get full text

Laminate Al 2 O 3 /Ta 2 O 5 Metal/Insulator/Insulator/Metal (MIIM) Devices for High-Voltage Applications by Jenkins, Melanie A., Austin, Dustin Z., Holden, Konner E. K., Allman, Derryl, Conley, John F.

Get full text

Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors by Austin, Dustin Z., Allman, Derryl, Price, David, Hose, Sallie, Conley, John F.

“…Metal-insulator-insulator-metal (MIIM) capacitors with bilayers of Al 2 O 3 and SiO 2 are deposited at 200 °C via plasma enhanced atomic layer deposition…”
Get full text

Atomic layer deposition of bismuth oxide using Bi(OCMe2 iPr)3 and H2O by Austin, Dustin Z., Allman, Derryl, Price, David, Hose, Sallie, Saly, Mark, Conley, John F.

“…Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe2 iPr)3 and H2O at deposition temperatures between 90 and 270 °C on Si3N4, TaN,…”
Get full text

Atomic layer deposition of bismuth oxide using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O by Austin, Dustin Z., Conley, John F., Allman, Derryl, Price, David, Hose, Sallie, Saly, Mark

“…Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O at deposition temperatures between 90…”
Get full text