Search Results - "Auret, F D"

Analysis of temperature dependent I – V measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant by Mtangi, W., Auret, F.D., Nyamhere, C., Janse van Rensburg, P.J., Chawanda, M. Diale, A.

“…Temperature dependent current–voltage ( I – V ) and Hall measurements were performed on Pd/ZnO Schottky barrier diodes in the range 20–300 K. The apparent…”
Get full text

Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes by Diale, M., Auret, F.D.

“…We have studied Au/ n-GaN Schottky barrier diodes. GaN surfaces have been prepared by cleaning in HCl and (NH 4) 2S prior to metal deposition. The zero-biased…”
Get full text

Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width by Omotoso, E, Paradzah, A T, Igumbor, E, Taleatu, B A, Meyer, W E, Auret, F D

“…The capture barrier energy of the E-center deep level defect introduced in Pd/Sb-doped Ge by alpha-particle irradiation has been studied. Palladium Schottky…”
Get full text

Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (1 0 0) by Chawanda, A., Nyamhere, C., Auret, F.D., Mtangi, W., Diale, M., Nel, J.M.

“…Platinum (Pt) and titanium (Ti) Schottky barrier diodes were fabricated on bulk grown (1 0 0) Sb-doped n-type germanium using the electron beam whereas nickel…”
Get full text

Electrical characterization of 1.8 MeV proton-bombarded ZnO by Auret, F. D., Goodman, S. A., Hayes, M., Legodi, M. J., van Laarhoven, H. A., Look, D. C.

“…We report on the electrical characterization of single-crystal ZnO and Au Schottky contacts formed thereon before and after bombarding them with 1.8 MeV…”
Get full text

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0) by Chawanda, A., Coelho, S.M.M., Auret, F.D., Mtangi, W., Nyamhere, C., Nel, J.M., Diale, M.

“…► Ir/n-Ge (1 0 0) Schottky diodes were characterized using I– V, C– V and SEM techniques under various annealing conditions. ► The variation of the electrical…”
Get full text

Boron carbide coatings on diamond particles by Ras, A.H., Auret, F.D., Nel, J.M.

“…Boron carbide (B 4C) coatings on diamond offer potential for obtaining homogeneous B 4C-diamond composites with improved properties. A method was developed for…”
Get full text

The dependence of barrier height on temperature for Pd Schottky contacts on ZnO by Mtangi, W., Auret, F.D., Nyamhere, C., Janse van Rensburg, P.J., Chawanda, A., Diale, M., Nel, J.M., Meyer, W.E.

“…Temperature dependent current–voltage ( I– V) and capacitance–voltage ( C– V) measurements have been performed on Pd/ZnO Schottky barrier diodes in the range…”
Get full text

Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO by Mtangi, W., Nel, J.M., Auret, F.D., Chawanda, A., Diale, M., Nyamhere, C.

“…We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors…”
Get full text

Analysis of GaN cleaning procedures by Diale, M., Auret, F.D., van der Berg, N.G., Odendaal, R.Q., Roos, W.D.

“…In this study, various surface cleaning techniques for the removal of contaminants from GaN were investigated. Auger electron spectroscopy (AES) analysis was…”
Get full text

Electrical characterization of vapor-phase-grown single-crystal ZnO by Auret, F. D., Goodman, S. A., Legodi, M. J., Meyer, W. E., Look, D. C.

“…Gold Schottky-barrier diodes (SBDs) were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the…”
Get full text

Comparison of two models for phonon assisted tunneling field enhanced emission from defects in Ge measured by DLTS by Pienaar, J., Meyer, W.E., Auret, F.D., Coelho, S.M.M.

“…Deep Level Transient Spectroscopy (DLTS) was used to measure the field enhanced emission rate from a defect introduced in n-type Ge. The defect was introduced…”
Get full text

A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes by Ahmed, Mustafa A. M., Auret, F. D., Nel, J. M., Venter, Andrè

“…4H-SiC Schottky barrier diodes (SBDs) were exposed to 5.4 MeV alpha particles with fluences of 2.55× 10 11  cm −2 , 5.11 × 10 11  cm −2 and 7.67 × 10 11  cm −2…”
Get full text

Characterization of AlGaN-based metal–semiconductor solar-blind UV photodiodes with IrO2 Schottky contacts by van Schalkwyk, L., Meyer, W.E., Auret, F.D., Nel, J.M., Ngoepe, P.N.M., Diale, M.

“…Intrinsically solar-blind ultraviolet (UV) AlGaN-based Schottky photodiodes were fabricated using Iridium oxide (IrO2) as the Schottky barrier material. The Ir…”
Get full text

dc-Hydrogen plasma induced defects in bulk n-Ge by Nyamhere, C., Venter, A., Murape, D.M., Auret, F.D., Coelho, S.M.M., Botha, J.R.

“…Bulk antimony doped germanium (n-Ge) has been exposed to a dc–hydrogen plasma. Capacitance–voltage depth profiles revealed extensive near surface passivation…”
Get full text

Optoelectronic characterization of Au/Ni/n-AlGaN photodiodes after annealing at different temperatures by Ngoepe, P.N.M., Meyer, W.E., Diale, M., Auret, F.D., van Schalkwyk, L.

“…The optoelectronic characteristics of Ni/Au Schottky photodiodes based on Al0.35Ga0.65N were investigated. The transmission of the Ni (50Å)/Au (50Å) layer was…”
Get full text

Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures by Ngoepe, PNM, Meyer, WE, Diale, M, Auret, FD, van Schalkwyk, L

“…In this study a comparison is made between the optical and electrical properties of Ni/Au and Ni/Ir/Au Schottky photodiodes based on Al0.35Ga0.65N. The effects…”
Get full text

Inductively coupled plasma induced deep levels in epitaxial n-GaAs by Auret, F.D., Janse van Rensburg, P.J., Meyer, W.E., Coelho, S.M.M., Kolkovsky, Vl, Botha, J.R., Nyamhere, C., Venter, A.

“…The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level…”
Get full text

A comparative study of electronic properties of the defects introduced in p -Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation by Das, A.G.M., Nyamhere, C., Auret, F.D., Hayes, M.

“…The electronic properties of defects introduced unintentionally, during electron beam deposition (EBD) of Ti and Mo on Cz grown, B-doped Si and those…”
Get full text

Shallow levels in virgin hydrothermally grown n-type ZnO studied by thermal admittance spectroscopy by Schifano, R., Monakhov, E.V., Svensson, B.G., Mtangi, W., Janse van Rensburg, P., Auret, F.D.

“…Three n-type single crystal hydrothermally grown ZnO samples with resistivities of 5.1±0.6, 15±2 and 220±20 Ω cm, respectively, have been electrically…”
Get full text