Search Results - "Aur, S."

(798) Safety of Levosimendan Infusion Before LVAD Implantation. A Retrospective Study by Godinho, R., Nowacka, A., Aur, S., Regamey, J., Ltaief, Z., Rusca, M., Hullin, R., Liaudet, L., Kirsch, M., Yerly, P.

“…With its long lasting inotropic effect, preoperative levosimendan (LEVO) was proposed to prevent right ventricular failure (RVF) after left ventricular assist…”
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(835) Preoperative Levosimendan to Reduce Risk of Right Ventricular Failure after LVAD Surgery by Godinho, R., Nowacka, A., Aur, S., Regamey, J., Ltaief, Z., Rusca, M., Hullin, R., Liaudet, L., Kirsch, M., Yerly, P.

“…Right ventricular failure (RVF) is frequent after left ventricular assist device (LVAD) implantation and associated with high mortality. Because of decreased…”
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Arrhythmia burden, rhythm interventions and outcome in a large Swiss multicenter population of d-TGA patients with atrial switch by Nozica, N, Asatryan, B, Aur, S, Greutmann, M, Schwerzmann, M, Bouchardy, J, Gass, M, Duru, F, Pascale, P, Reichlin, T, Pruvot, E, Wolber, T, Roten, L

“…Abstract Funding Acknowledgements Type of funding sources: None. Background Patients with dextro-transposition of the great arteries (d-TGA) and atrial switch…”
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Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics by Shanware, A., Visokay, M.R., Chambers, J.J., Rotondaro, A.L.P., Bu, H., Bevan, M.J., Khamankar, R., Aur, S., Nicollian, P.E., McPherson, J., Colombo, L.

“…Electrical instability due to charge trapping in high-k materials is a primary concern for the usefulness of these films in future CMOS devices. This paper…”
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MOSFET asymmetry and gate-drain/source overlap effects on hot carrier reliability by Aur, S., Shyh-Horng Yang, Toan Tran

“…The MOSFET gate-drain/source overlap is a critical factor in device performance. An understanding of trade-off between performance and reliability is important…”
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An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes by Khamankar, R., Bu, H., Bowen, C., Chakravarthi, S., Chidambaram, P.R., Bevan, M., Krishnan, A., Niimi, H., Smith, B., Blatchford, J., Hornung, B., Lu, J.P., Nicollian, P., Kirkpatrick, B., Miles, D., Hewson, M., Farber, D., Hall, L., Alshareef, H., Varghese, A., Gurba, A., Ukraintsev, V., Rathsack, B., DeLoach, J., Tran, J., Kaneshige, C., Somervell, M., Aur, S., Machala, C., Grider, T.

“…In this abstract we present a highly manufacturable, high performance 90nm technology with best in class performance for 35nm gate-length N and P transistors…”
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Hot-electron reliability and ESD latent damage by Aur, S., Chatterjee, A., Polgreen, T.

“…The impact of noncatastrophic electrostatic discharge (ESD) stress on hot-electron reliability as well as the effect of hot-electron (HE) injection on the ESD…”
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Identification of DRAM sense-amplifier imbalance using hot-carrier evaluation by Aur, S., Duvvury, C., McAdams, H., Perrin, C.

“…A study of the cause of an inherent imbalance in a DRAM sense amplifier is presented. Refresh time measurements were used to assess this imbalance before and…”
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Utilization of plasma hydrogenation in stacked SRAM's with poly-Si PMOSFET's and bulk-Si NMOSFET's by Rodder, M., Aur, S.

“…Poly-si PMOSFETs were utilized with bulk-Si NMOSFETs in stacked SRAM cells. Results regarding utilization of a plasma hydrogenation step in a stacked SRAM…”
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Sudden cardiac death and syncope of unknown origin: Think about catecholaminergic polymorphic ventricular tachycardia by Aur, S., Fellmann, F., Good, J.M., Fodstad, H., Sekarski, N., Bhuiyan, Z.A., Schlaepfer, J.

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IVB-6 hot-carrier reliability of trench transistor by Aur, S., Ping Yang

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Setting the trap for hot carriers [MOS VLSI] by Aur, S., Duvvury, C., Hunter, W.R.

“…The device degradation under ac and dc stress have been discussed and a relationship between the two has been established,. We have shown that the commonly…”
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Failure in CMOS circuits induced by hot carriers in multi-gate transistors by Chatterjee, A., Aur, S.-W., Niuya, T., Yang, P., Seitchik, J.A.

“…The problem of vertical isolation in circuits fabricated using shallow n-well epitaxial CMOS technology is analyzed. Unexpectedly high substrate current…”
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Antenna device reliability for ULSI processing by Krishnan, S., Amerasekera, A., Rangan, S., Aur, S.

“…In this paper we assess gate oxide thickness (t/sub OX/) scaling issues with respect to key plasma processes-metal etch, contact etch and deposition, and…”
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High density plasma etch induced damage to thin gate oxide by Krishnan, S., Aur, S., Wilhite, G., Rajgopal, R.

“…We report here severe charging caused by an inductively coupled plasma (ICP) etch, a high density plasma tool, on devices targeted for the 0.35 /spl mu/m…”
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A model for channel hot carrier reliability degradation due to plasma damage in MOS devices by Rangan, S., Krishnan, S., Amerasekara, A., Aur, S., Ashok, S.

“…An empirical relationship between device channel hot carrier lifetime and process induced damage has been developed, by correlating the antenna ratio (AR) to…”
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Effects of advanced processes on hot carrier reliability by Aur, S., Grider, T., McNeil, V., Holloway, T., Eklund, R.

“…There are several advanced processes which are being actively studied as candidates for sub-0.25 /spl mu/m technology and beyond. This paper studies the…”
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A comprehensive assessment of microtrenching during high density polysilicon etch by Gupta, I.J., Kraft, R., Krishnan, S., Gale, B., Aur, S., Rodder, M., Laaksonen, T.

“…We have used a modified MOS capacitor (MMOS) to assess microtrenching during the polysilicon gate etch process. We demonstrate for the first time that…”
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Trends for deep submicron VLSI and their implications for reliability by Chatterjee, P.K., Hunter, W.R., Amerasekera, A., Aur, S., Duvvury, C., Nicollian, P.E., Ting, L.M., Ping Yang

“…We examine the technology trends in both device and interconnect process integration flow design, in order to put into perspective the corresponding…”
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Atomic structure of amorphous particles produced by spark erosion by Aur, S., Egami, T., Berkowitz, A. E., Walter, J. L.

“…The atomic structure of amorphous particles of composition Fe sub 75 Si sub 15 B sub 10 produced by spark erosion was studied by the energy-dispersive X-ray…”
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