Search Results - "Aumer, M.E."

RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz by Jessen, G.H., Gillespie, J.K., Via, G.D., Crespo, A., Langley, D., Aumer, M.E., Ward, C.S., Henry, H.G., Thomson, D.B., Partlow, D.P.

“…Unstrained high-electron mobility transistors (HEMTs) were fabricated from InAlN/GaN on semi-insulating SiC substrates. The devices had 0.24-mum T-gates with a…”
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Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system by McIntosh, F.G, Piner, E.L, Roberts, J.C, Behbehani, M.K, Aumer, M.E, El-Masry, N.A, Bedair, S.M

“…The growth of GaInN ternary alloys has been investigated using atomic layer epitaxy. Single crystal films have been deposited at 100 Torr in the 600°C to 700°C…”
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