Search Results - "Aukarasereenont, Patjaree"
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2‐nm‐Thick Indium Oxide Featuring High Mobility
Published in Advanced materials interfaces (01-03-2023)“…Thin film transistors (TFTs) are key components for the fabrication of electronic and optoelectronic devices, resulting in a push for the wider exploration of…”
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An X‐Ray Absorption Spectroscopy Investigation into the Fundamental Structure of Liquid Metal Alloys
Published in Small science (01-11-2024)“…Gallium and gallium alloys have gained significant interest due to gallium's low melting point. This property allows for gallium‐based catalysts to take…”
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High‑k 2D Sb2O3 Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process
Published in ACS nano (26-10-2021)“…High dielectric constant (high-k) ultrathin films are required as insulating gate materials. The well-known high-k dielectrics, including HfO2, ZrO2, and…”
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High-mobility p-type semiconducting two-dimensional β-TeO2
Published in Nature electronics (01-04-2021)“…Wide-bandgap oxide semiconductors are essential for the development of high-speed and energy-efficient transparent electronics. However, while many…”
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High- k 2D Sb 2 O 3 Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process
Published in ACS nano (26-10-2021)Get full text
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Atomically Thin Antimony‐Doped Indium Oxide Nanosheets for Optoelectronics
Published in Advanced optical materials (01-10-2022)“…Wide bandgap semiconducting oxides are emerging as potential 2D materials for transparent electronics and optoelectronics. This fuels the quest for discovering…”
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Hydrogen-Terminated Diamond MOSFETs Using Ultrathin Glassy Ga2O3 Dielectric Formed by Low-Temperature Liquid Metal Printing Method
Published in ACS applied electronic materials (24-05-2022)“…The p-type surface conductivity of hydrogen-terminated diamond (H-diamond) provides a viable approach toward diamond-based wide-bandgap…”
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Author Correction: High-mobility p-type semiconducting two-dimensional β-TeO2
Published in Nature electronics (07-06-2021)Get full text
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