Search Results - "Augendre, E."

Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers by Ben Bakir, B, Descos, A, Olivier, N, Bordel, D, Grosse, P, Augendre, E, Fulbert, L, Fedeli, J M

“…We report the first demonstration of an electrically driven hybrid silicon/III-V laser based on adiabatic mode transformers. The hybrid structure is formed by…”
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Crossover from spin accumulation into interface states to spin injection in the germanium conduction band by Jain, A, Rojas-Sanchez, J-C, Cubukcu, M, Peiro, J, Le Breton, J C, Prestat, E, Vergnaud, C, Louahadj, L, Portemont, C, Ducruet, C, Baltz, V, Barski, A, Bayle-Guillemaud, P, Vila, L, Attané, J-P, Augendre, E, Desfonds, G, Gambarelli, S, Jaffrès, H, George, J-M, Jamet, M

“…Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices…”
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Electrical spin injection and detection at Al2O3/ n -type germanium interface using three terminal geometry by Jain, A., Louahadj, L., Peiro, J., Le Breton, J. C., Vergnaud, C., Barski, A., Beigné, C., Notin, L., Marty, A., Baltz, V., Auffret, S., Augendre, E., Jaffrès, H., George, J. M., Jamet, M.

“…In this letter, we report on electrical spin injection and detection in n-type germanium-on-insulator using a Co/Py/Al2O3 spin injector and 3-terminal…”
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"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS by Mercha, A., Rafi, J.M., Simoen, E., Augendre, E., Claeys, C.

“…In this paper, evidence will be provided for the existence of a new class of floating body effects, occurring in SOI and bulk MOSFETs in the linear operation…”
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Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers by Ben Bakir, B., Descos, A., Olivier, N., Bordel, D., Grosse, P., Augendre, E., Fulbert, L., Fedeli, J. M.

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Efficient coupler between silicon photonic and metal-insulator-silicon-metal plasmonic waveguides by Emboras, A., Briggs, R. M., Najar, A., Nambiar, S., Delacour, C., Grosse, Ph, Augendre, E., Fedeli, J. M., de Salvo, B., Atwater, H. A., Espiau de Lamaestre, R.

“…We report the experimental realization of a compact, efficient coupler between silicon waveguides and vertical metal-insulator-silicon-metal (MISM) plasmonic…”
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Electrical and thermal spin accumulation in germanium by Jain, A., Vergnaud, C., Peiro, J., Le Breton, J. C., Prestat, E., Louahadj, L., Portemont, C., Ducruet, C., Baltz, V., Marty, A., Barski, A., Bayle-Guillemaud, P., Vila, L., Attané, J.-P., Augendre, E., Jaffrès, H., George, J.-M., Jamet, M.

“…In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate…”
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A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs by Severi, S., Pantisano, L., Augendre, E., San Andres, E., Eyben, P., De Meyer, K.

“…When comparing the extracted carrier mobility of long- and short-channel transistors, special consideration must be given to the metallurgical gate length (L…”
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Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction by Van Den Daele, W., Augendre, E., Le Royer, C., Damlencourt, J.-F., Grandchamp, B., Cristoloveanu, S.

“…We present the fabrication and characterization of Fully-Depleted pMOSFETs processed on ultra-thin GeOI (Germanium-On-Insulator) wafers obtained by the…”
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Groups III and V impurity solubilities in silicon due to laser, flash,and solid-phase-epitaxial-regrowth anneals by Duffy, R., Dao, T., Tamminga, Y., van der Tak, K., Roozeboom, F., Augendre, E.

“…In this work the authors studied impurity solubilities of groups III and V elements in silicon resulting from laser anneal, flash anneal, and…”
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Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs by Van Den Daele, W., Le Royer, C., Augendre, E., Mitard, J., Ghibaudo, G., Cristoloveanu, S.

“…► In depth characterization of fully-depleted pMOSFET on GeOI substrates. ► A methodology to extract the empirical factor on FD-GeOI is proposed. ► We…”
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High performance 70 nm gate length germanium-on-insulator pMOSFET with high- k/metal gate by Romanjek, K., Hutin, L., Le Royer, C., Pouydebasque, A., Jaud, M.-A., Tabone, C., Augendre, E., Sanchez, L., Hartmann, J.-M., Grampeix, H., Mazzocchi, V., Soliveres, S., Truche, R., Clavelier, L., Scheiblin, P., Garros, X., Reimbold, G., Vinet, M., Boulanger, F., Deleonibus, S.

“…We demonstrate for the first time 70 nm gate length TiN/HfO 2 pMOSFETs on 200 mm GeOI wafers, with excellent performance: I ON = 260 μA/μm and I OFF = 500…”
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Improved GeOI substrates for pMOSFET off-state leakage control by Romanjek, K., Augendre, E., Van Den Daele, W., Grandchamp, B., Sanchez, L., Le Royer, C., Hartmann, J.-M., Ghyselen, B., Guiot, E., Bourdelle, K., Cristoloveanu, S., Boulanger, F., Clavelier, L.

“…The origin of parasitic leakage that occurs in some GeOI pMOSFETs has been investigated and located at the Ge-buried oxide (BOX) interface. Silicon passivation…”
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Characterization of impact of process options in Germanium-On-Insulator (GeOI) high-k & metal gate pMOSFETs by low-frequency noise by Valenza, M., Gyani, J., Martinez, F., Soliveres, S., Le Royer, C., Augendre, E., Clavelier, L.

“…► Low frequency noise (LFN) is measured at front and back interfaces of GeOI pMOSFETs. ► Three types of As ion implantation and four types of halo implantation…”
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Investigation of 1/ f noise in germanium-on-insulator 0.12 μm PMOS transistors from weak to strong inversion by Gyani, J., Valenza, M., Soliveres, S., Martinez, F., Le Royer, C., Augendre, E., Romanjek, K., Drazek, C.

“…This paper presents an experimental analysis of the noise measurements performed in germanium-on-insulator (GeOI) 0.12 μm PMOS transistors from weak to strong…”
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UTBB FDSOI scaling enablers for the 10nm node by Grenouillet, L., Liu, Q., Wacquez, R., Morin, P., Loubet, N., Cooper, D., Pofelski, A., Weng, W., Bauman, F., Gribelyuk, M., Wang, Y., De Salvo, B., Gimbert, J., Cheng, K., Le Tiec, Y., Chanemougame, D., Augendre, E., Maitrejean, S., Khakifirooz, A., Kuss, J., Schulz, R., Janicki, C., Lherron, B., Guillaumet, S., Rozeau, O., Chafik, F., Bataillon, J. L., Wu, T., Kleemeier, W., Celik, M., Faynot, O., Sampson, R., Doris, B., Vinet, M.

“…UTBB FDSOI technology is a faster, cooler and simpler technology addressing the performance/energy consumption trade-off. In this paper we present the main…”
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Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETs by Pouydebasque, A., Romanjek, K., Le Royer, C., Tabone, C., Previtali, B., Allain, F., Augendre, E., Hartmann, J.-M., Grampeix, H., Vinet, M.

“…In this brief, the hole transport properties of narrow-width germanium-on-insulator (GeOI) pMOSFETs are investigated. We report, for the first time, +65%…”
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Germanium oxynitride (GeOxNy) as a back interface passivation layer for Germanium-on-insulator substrates by Signamarcheix, T., Allibert, F., Letertre, F., Chevolleau, T., Sanchez, L., Augendre, E., Deguet, C., Moriceau, H., Clavelier, L., Rieutord, F.

“…This paper describes the development of a GeOxNy surface passivation of germanium, which is mandatory for microelectronics germanium-on-insulator (GeOI)…”
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A comparative 1/ f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology by Valenza, M., El Husseini, J., Gyani, J., Martinez, F., Bawedin, M., Le Royer, C., Augendre, E., Damlencourt, J.F.

“…This paper presents an experimental investigation of Low-frequency Noise (LFN) measurements on Germanium-On-Insulator (GeOI) PMOS transistors processed on…”
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Advanced CMOS device technologies for 45 nm node and below by Veloso, A., Hoffmann, T., Lauwers, A., Yu, H., Severi, S., Augendre, E., Kubicek, S., Verheyen, P., Collaert, N., Absil, P., Jurczak, M., Biesemans, S.

“…We review and discuss the latest developments and technology options for 45 nm node and below, with scaled planar bulk MOSFETs and MuGFETs as emerging devices…”
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