Search Results - "Assayag, G. Ben"

Extended defects in shallow implants by Claverie, A., Colombeau, B., de Mauduit, B., Bonafos, C., Hebras, X., Ben Assayag, G., Cristiano, F.

“…Extended defects are often found after ion implantation and annealing of silicon and they are known to affect dopant diffusion. The article reviews the…”
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Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories by Bonafos, C., Spiegel, Y., Normand, P., Ben-Assayag, G., Groenen, J., Carrada, M., Dimitrakis, P., Kapetanakis, E., Sahu, B. S., Slaoui, A., Torregrosa, F.

“…Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate…”
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A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si by Grisolia, J., Ben Assayag, G., Claverie, A., Aspar, B., Lagahe, C., Laanab, L.

“…Proton implantation and thermal annealing of silicon result in the formation of a specific type of extended defects involving hydrogen, named “platelets” or…”
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Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium by Fazzini, P.F., Cristiano, F., Talbot, E., Assayag, G. Ben, Paul, S., Lerch, W., Pakfar, A., Hartmann, J.M.

“…We studied the evolution of extended defects in relaxed and strained Si and SiGe structures after an amorphising implant. The investigated structures included…”
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Synthesis of localized 2D-layers of silicon nanoparticles embedded in a SiO2 layer by a stencil-masked ultra-low energy ion implantation process by Dumas, C., Grisolia, J., Ressier, L., Arbouet, A., Paillard, V., Ben Assayag, G., Claverie, A., van den Boogaart, M. A. F., Brugger, J.

“…We propose an original approach called “stencil‐masked ion implantation process” to perform a spatially localized synthesis of a limited number of Si…”
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Structural and magnetic properties of N + -irradiated Co/Pt multilayers with perpendicular bimodal behaviour by Blon, T., Baules, P., Ben Assayag, G., Kolinský, V., Ousset, J.-C., Snoeck, E.

“…We report on microstructural and magnetic investigations of the modification of (Co 0.5 nm/Pt 6 nm) 15 multilayer (ML) films by 150 keV nitrogen ion…”
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Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications by Bonafos, C., Coffin, H., Schamm, S., Cherkashin, N., Ben Assayag, G., Dimitrakis, P., Normand, P., Carrada, M., Paillard, V., Claverie, A.

“…In this work, we show how to manipulate two-dimensional arrays of Si NCs in thin (⩽10 nm) SiO 2 layers by ultra-low-energy (⩽1 keV) ion implantation and…”
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An electron microscopy study of the growth of Ge nanoparticles in SiO2 by Bonafos, C., Garrido, B., Lopez, M., Perez-Rodriguez, A., Morante, J. R., Kihn, Y., Ben Assayag, G., Claverie, A.

“…Ion implantation followed by high temperature annealing can be used to synthesize group IV semiconducting nanoparticles in SiO2. The density and the size…”
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From continuous to quantized charging response of silicon nanocrystals obtained by ultra-low energy ion implantation by Shalchian, M., Grisolia, J., Ben Assayag, G., Coffin, H., Atarodi, S.M., Claverie, A.

“…In this paper, we present a study on the contribution of silicon nanocrystals to the electrical transport characteristics of large (100 μm × 100 μm) and small…”
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Characterization of silicon nanocrystals embedded in thin oxide layers by TOF-SIMS by Perego, M., Ferrari, S., Fanciulli, M., Ben Assayag, G., Bonafos, C., Carrada, M., Claverie, A.

“…In this paper TOF-SIMS is used to characterize nanocrystals synthetized by ion implantation and subsequent annealing. The variation of the Si n − signals…”
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Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation by Ioannou-Sougleridis, V., Dimitrakis, P., Vamvakas, V.Em, Normand, P., Bonafos, C., Schamm, S., Cherkashin, N., Ben Assayag, G., Perego, M., Fanciulli, M.

“…This work presents an alternative method for the formation of the top oxide in oxide-nitride-oxide structures. The method utilizes low-energy (1 keV) Si ion…”
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Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon by Colombeau, B., Cristiano, F., Altibelli, A., Bonafos, C., Assayag, G. Ben, Claverie, A.

“…In this letter, a physically based model describing the kinetic evolution of extrinsic defects during annealing is presented. The fundamental concepts of…”
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Ion beam synthesis of GaN precipitates in GaAs by Amine, S, Ben Assayag, G, Bonafos, C, de Mauduit, B, Hidriss, H, Claverie, A

“…In this paper, we report on the fabrication of GaN nanoparticles by ion implantation of nitrogen in GaAs and subsequent thermal annealing. The samples are…”
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Field effect white and tunable electroluminescence from ion beam synthesized Si- and C-rich SiO2 layers by Jambois, O., Carreras, Josep, Pérez-Rodríguez, A., Garrido, B., Bonafos, C., Schamm, S., Assayag, G. Ben

“…White and tunable electroluminescence has been obtained by field effect injection in 40nm thick Si- and C-rich SiO2 layers. The films, synthesized by ion…”
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Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO2 by BONAFOS, C, GARRIDO, B, LOPEZ, M, PEREZ-RODRIGUEZ, A, MORANTE, J. R, KIHN, Y, BEN ASSAYAG, G, CLAVERIE, A

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Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitor by Shalchian, M., Grisolia, J., Assayag, G. Ben, Coffin, H., Atarodi, S. M., Claverie, A.

“…In this article, we present the room-temperature current-voltage characteristics of a nanometer scale (100×100nm2) metal-oxide-semiconductor capacitor…”
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Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applications by DIMITRAKIS, P, MOUTI, A, BONAFOS, C, SCHAMM, S, BEN ASSAYAG, G, IOANNOU-SOUGLERIDIS, V, SCHMIDT, B, BECKE, J, NORMAND, P

“…Structural and electrical properties of ALD-grown 5 and 7 nm-thick Al2O3 layers before and after implantation of Ge ions (1 keV, 0.5–1 × 1016 cm−2) and thermal…”
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Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology by Müller, T., Heinig, K.-H., Möller, W., Bonafos, C., Coffin, H., Cherkashin, N., Assayag, G. Ben, Schamm, S., Zanchi, G., Claverie, A., Tencé, M., Colliex, C.

“…Scalability and performance of current flash memories can be improved substantially by replacing the floating polycrystalline-silicon gate by a layer of Si…”
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Magnetic easy-axis switching in Co/Pt and Co/Au superlattices induced by nitrogen ion beam irradiation by Blon, T., Ben Assayag, G., Ousset, J.-C., Pecassou, B., Claverie, A., Snoeck, E.

“…In this paper, the sputtering-grown [Au 6nm/Co 0.5nm]×10 and [Pt 6nm/Co 0.5nm]×15 superlattices are irradiated using N+ 150keV ions with fluences ranging from…”
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Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications by Normand, P., Kapetanakis, E., Dimitrakis, P., Skarlatos, D., Beltsios, K., Tsoukalas, D., Bonafos, C., Ben Assayag, G., Cherkashin, N., Claverie, A., Van Den Berg, J.A., Soncini, V., Agarwal, A., Ameen, M., Perego, M., Fanciulli, M.

“…An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy…”
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