Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

In this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)- based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD simulators to obtain the RC netlists. We then use these R...

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Bibliographic Details

Published in:	2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) pp. 153 - 156
Main Authors:	Jaehyun Lee, Jie Liang, Amoroso, Salvatore M., Sadi, Toufik, Liping Wang, Asenov, Flamen, Pender, Andrew, Reid, Dave T., Georgiev, Vihar P., Millar, Campbell, Todri-Sanial, Aida, Asenov, Asen
Format:	Conference Proceeding
Language:	English
Published:	The Japan Society of Applied Physics 01-09-2017
Subjects:	Carbon nanotubes carbon nanotubes (CNTs) circuit simulation Conductivity Cu-CNT composites Delays Density Functional Theory (DFT) hierarchical models Integrated circuit interconnections Integrated circuit modeling interconnects Quantum capacitance
Online Access:	Get full text
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