Search Results - "Asanovski, R."

Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes by Tondelli, L., Asanovski, R., Scholten, A. J., Dinh, T. V., Tam, S.-W., Pijper, R. M. T., Selmi, L.

“…Accurate determination of thermal resistances having a clear physical interpretation is crucial for analyzing self-heating effects (SHEs) in bulk FinFETs and…”
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Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis by Asanovski, R., Arimura, H., de Marneffe, J.-F., Palestri, P., Horiguchi, N., Kaczer, B., Selmi, L., Franco, J.

“…This study presents a comprehensive investigation of defects in the gate-stack of low-thermal budget replacement metal gate (RMG) MOSFETs treated with novel…”
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New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications by Asanovski, R., Grill, A., Franco, J., Palestri, P., Beckers, A., Kaczer, B., Selmi, L.

“…Cryo-CMOS characterization, modeling, and development have significantly progressed to help overcome the interconnection bottleneck between qubits and the…”
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Probing Band Tail States in MOSFETs at Cryogenic Temperatures through Noise Spectroscopy by Asanovski, R., Grill, A., Franco, J., Palestri, P., Li, R., Kubicek, S., De Greve, K., Kaczer, B., Selmi, L.

“…Low-frequency noise is one of the main limiting factors for the design of cryogenic electronics and it is also responsible for qubit errors in quantum…”
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Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K by Asanovski, R., Grill, A., Franco, J., Palestri, P., Mertens, H., Ritzenthaler, R., Horiguchi, N., Kaczer, B., Selmi, L.

“…The DC and low-frequency noise performance of an array of 800 parallel Forksheet MOSFETs were investigated by performing measurements over a wide temperature…”
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On the Output Conductance Dispersion due to Traps and Self-Heating in Large Bulk, FDSOI and FinFET nMOS Devices by Tondelli, L., Scholten, A. J., Asanovski, R., Pijper, R. M. T., Dinh, T. V., Selmi, L.

“…We report experimental investigations on the AC small signal output conductance (g_{D D}) of large nMOSFETs with bulk, FDSOI, and bulk FinFET architecture. The…”
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Assessment of the Transient Self-Heating Effect and its Impact on the Performance of Watt-Level RF Power Amplifier in a FinFET Technology by Dinh, T. V., Tam, S-W., Scholten, A. J., Tondelli, L., Pijper, R. M. T., Kondapalli, S. H., Xie, J., Wong, A., To, I., Asanovski, R., Selmi, L.

“…The dynamic behavior of self-heating effect in FinFET devices has a profound impact on the performance of RF circuits. Hence an accurate assessment of such…”
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Gate oxide reliability: upcoming trends, challenges, and opportunities by Kaczer, B., Degraeve, R., Franco, J., Grasser, T., Roussel, Ph. J., Bury, E., Weckx, P., Chasin, A., Tyaginov, S., Vandemaele, M., Grill, A., O'Sullivan, B., Fortuny, J. Diaz, Canflanca, P. Saraza, Waltl, M., Rinaudo, P., Zhao, Y., Kao, E., Asanovski, R., Catapano, E., Beckers, A., Vici, A., Truijen, B., Higashi, Y., Clima, S., Xiang, Y., Sangani, D., Panarella, L., Smets, Q., Knobloch, T., Waldhor, D., Van Troeye, B., Guo, Y., Kruv, A., Viswakarma, K., Gonzalez, M., Linten, D.

“…Any product that stops functioning before its declared useful lifetime will be deemed substandard at best, dangerous or fatal at worst. Integrated circuits…”
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