Search Results - "As, Donat J."

Single-photon emission from cubic GaN quantum dots by Kako, Satoshi, Holmes, Mark, Sergent, Sylvain, Bürger, Matthias, As, Donat J., Arakawa, Yasuhiko

“…We report the demonstration of single-photon emission from cubic GaN/AlN quantum dots grown by molecular beam epitaxy. We have observed spectrally clean and…”
Get full text

MBE growth and applications of cubic AlN/GaN quantum wells by As, Donat J., Mietze, Christian

“…Molecular beam epitaxy (MBE) of cubic group III‐nitrides is a direct way to eliminate polarization effects which inherently limit the performance of…”
Get full text

Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy by Blumenthal, Sarah, Reuter, Dirk, As, Donat J.

“…We have investigated the optical properties of self‐assembled cubic GaN quantum dots (QDs) in a cubic AlN matrix grown in Stranski–Krastanov growth mode. Two…”
Get full text

Capacitance Voltage Characteristics and Electron Holography on Cubic AlGaN/GaN Heterojunctions by As, Donat J, Zado, Alexander, Wei, Qiyang Y, Li, Ti, Huang, Jingyi Y, Ponce, Fernando A

“…Cubic Al x Ga 1-x N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on free-standing 3C-SiC(001). The samples consist of an…”
Get full text

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN by Baron, Elias, Goldhahn, Rüdiger, Deppe, Michael, As, Donat J., Feneberg, Martin

“…An investigation of different n‐type doped zincblende gallium nitride thin films measured by photoluminescence from 7 K to room temperature is presented. The…”
Get full text

Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells by Wecker, Tobias, Callsen, Gordon, Hoffmann, Axel, Reuter, Dirk, As, Donat J.

“…The carrier transfer via non‐resonant tunneling is of great significance for many devices like the quantum cascade laser. In this study time‐resolved…”
Get full text

Stacked Self‐Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy by Blumenthal, Sarah, Rieger, Torsten, Meertens, Doris, Pawlis, Alexander, Reuter, Dirk, As, Donat J.

“…We have investigated the stacking of self‐assembled cubic GaN quantum dots (QDs) grown in Stranski–Krastanov (SK) growth mode. The number of stacked layers is…”
Get full text

Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic AlxGa1−xN by Deppe, Michael, Henksmeier, Tobias, Gerlach, Jürgen W., Reuter, Dirk, As, Donat J.

“…In cubic (c‐)GaN Ge has emerged as a promising alternative to Si for n‐type doping, offering the advantage of slightly improved electrical properties. Herein,…”
Get full text

Incorporation of germanium for n‐type doping of cubic GaN by Deppe, Michael, Gerlach, Jürgen W., Reuter, Dirk, As, Donat J.

“…We introduce germanium as an alternative to silicon for n‐type doping of cubic gallium nitride. Layers with electron concentrations up to 3.7 × 1020 cm−3 were…”
Get full text

Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice by Jostmeier, Thorben, Wecker, Tobias, Reuter, Dirk, As, Donat J., Betz, Markus

“…We investigate the linear and dynamical nonlinear optical properties of a superlattice composed of ultra-narrow n-doped GaN/AlN quantum wells. Owing to huge…”
Get full text

Optical properties of cubic GaN from 1 to 20 eV by Feneberg, Martin, Röppischer, Marcus, Cobet, Christoph, Esser, Norbert, Schörmann, Jörg, Schupp, Thorsten, As, Donat J., Hörich, Florian, Bläsing, Jürgen, Krost, Alois, Goldhahn, Rüdiger

“…We present a comprehensive overview of the optical properties of zinc-blende GaN. By a variety of different methods, such as temperature-dependent…”
Get full text

Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots by Rothfuchs, Charlotte, Kukharchyk, Nadezhda, Koppe, Tristan, Semond, Fabrice, Blumenthal, Sarah, Becker, Hans-Werner, As, Donat J., Hofsäss, Hans C., Wieck, Andreas D., Ludwig, Arne

“…We report on ion implantation into GaN QDs and investigate their radiation hardness. The experimental study is carried out by photoluminescence (PL)…”
Get full text

Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy by Wecker, Tobias, Callsen, Gordon, Hoffmann, Axel, Reuter, Dirk, As, Donat J.

“…Optical transitions involving higher energy levels of cubic AlGaN quantum wells are investigated by means of photoluminescence excitation spectroscopy. An…”
Get full text

Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells by Li, Shunfeng, Schörmann, Jörg, As, Donat J., Lischka, Klaus

“…Cubic InGaN∕GaN multi-quantum-wells (MQWs) with high structural and optical quality are achieved by utilizing freestanding 3C-SiC (001) substrates and…”
Get full text

Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N by Deppe, Michael, Henksmeier, Tobias, Gerlach, Jürgen W., Reuter, Dirk, As, Donat J.

Get full text

Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al 0.64 Ga 0.36 N Double Quantum Wells by Wecker, Tobias, Callsen, Gordon, Hoffmann, Axel, Reuter, Dirk, As, Donat J.

Get full text

Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures by Herval, Leonilson K.S., de Godoy, Marcio P.F., Wecker, Tobias, As, Donat J.

“…Cubic (Al)GaN/AlN multiple quantum wells were grown by plasma assisted molecular beam epitaxy with three different configurations at interfaces. We employ…”
Get full text

Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al 0.25 Ga 0.75 N double quantum well grown by molecular beam epitaxy by Wecker, Tobias, Callsen, Gordon, Hoffmann, Axel, Reuter, Dirk, As, Donat J.

“…Optical transitions involving higher energy levels of cubic AlGaN quantum wells are investigated by means of photoluminescence excitation spectroscopy. An…”
Get full text

Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al sub(0.25) Ga sub(0.75) N double quantum well grown by molecular beam epitaxy by Wecker, Tobias, Callsen, Gordon, Hoffmann, Axel, Reuter, Dirk, As, Donat J

“…Optical transitions involving higher energy levels of cubic AlGaN quantum wells are investigated by means of photoluminescence excitation spectroscopy. An…”
Get full text

Mechanisms for the emission of visible light from GaAs field-effect transistors by ZAPPE, H. P, AS, D. J

“…The emission of visible light from GaAs metal-semiconductor field-effect transistors under high electric field conditions is studied in detail in order to…”
Get full text