Search Results - "Aryadeep, M."

A study of interstitial effect on UMOS performance by Hema, E. P., Gene Sheu, Aryadeep, M., Yang, S. M.

“…Threshold voltage shift is a major problem for UMOS device. This study explains how device performance can be affected by silicon defects (interstitial and…”
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Optimization of NLDMOS structure for higher breakdown voltage and lower On-Resistance by Hema, E. P., Sheu, Gene, Aryadeep, M., Kurniawan, Erry Dwi, Yang, S. M., Chen, P. A.

“…In this work, high voltage NLDMOS performance in terms of high blocking voltage and On-Resistance have been investigated. In order to obtain the optimum…”
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