Search Results - "Arthur, S. D."

High-power and reliable operation of vertical light-emitting diodes on bulk GaN by Cao, X. A., Arthur, S. D.

“…In Ga N ∕ Ga N light-emitting diodes (LEDs) with lateral and vertical geometries have been fabricated on free-standing GaN substrates. Current spreading was…”
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Microstructural origin of leakage current in GaN/InGaN light-emitting diodes by Cao, X.A, Teetsov, J.A, Shahedipour-Sandvik, F, Arthur, S.D

“…A combination of atomic force microscopy (AFM), conductive AFM (C-AFM) and scanning Kelvin probe microscopy (SKPM) was used to investigate the correlation…”
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Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates by Cao, X. A., LeBoeuf, S. F., D’Evelyn, M. P., Arthur, S. D., Kretchmer, J., Yan, C. H., Yang, Z. H.

“…Blue and near-ultraviolet (UV) InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission at 465 nm and 405 nm, respectively, were grown…”
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Growth and characterization of GaN PiN rectifiers on free-standing GaN by Cao, X. A., Lu, H., LeBoeuf, S. F., Cowen, C., Arthur, S. D., Wang, W.

“…GaN PiN rectifiers with high structural quality were grown on free-standing GaN substrates using metalorganic chemical vapor deposition. The lattice mismatch…”
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Outcome implications for the timing of bilateral total knee arthroplasties by Ritter, M, Mamlin, L A, Melfi, C A, Katz, B P, Freund, D A, Arthur, D S

“…Health Care Financing Administration data from 1985 to 1990 revealed 339,152 total knee arthroplasties of which 62,730 (18.6%) were bilateral procedures…”
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Stacking-fault formation and propagation in 4H-SiC PiN diodes by Stahlbush, R. E., Fatemi, M., Fedison, J. B., Arthur, S. D., Rowland, L. B., Wang, S.

“…Stacking-fault growth in SiC PiN diodes has been examined using light-emission imaging and stressing at 80 A/cm super(2) and 160 A/cm super(2). Dark areas in…”
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Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes by Twigg, M. E., Stahlbush, R. E., Fatemi, M., Arthur, S. D., Fedison, J. B., Tucker, J. B., Wang, S.

“…Using site-specific plan-view transmission electron microscopy (TEM) and light emission imaging, we have identified stacking faults formed during forward…”
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Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes by Cao, X.A., Lu, H., Kaminsky, E.B., Arthur, S.D., Grandusky, J.R., Shahedipour-Sandvik, F.

“…Homoepitaxial growth of GaN epilayers on free-standing hydride vapor phase epitaxy (HVPE) GaN substrates offered a better control over surface morphology,…”
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Stacking-fault formation and propagation in 4H-SiC PiN diodes by Stahlbush, R. E., Fatemi, M., Fedison, J. B., Arthur, S. D., Rowland, L. B., Wang, S.

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Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs by Okayama, T., Arthur, S.D., Garrett, J.L., Rao, M.V.

“…In this work, the instability of n-channel 4H–SiC double-implanted metal–oxide–semiconductor field-effect-transistors (DMOSFETs) was studied, in terms of…”
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Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodes by MERFELD, D. W, CAO, X. A, LEBOEUF, S. F, ARTHUR, S. D, KRETCHMER, J. W, D, M. P, EVELYN

“…An analysis of blue and near-ultraviolet (UV) light-emitting diodes (LEDs) and material structures explores the dependence of device performance on material…”
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Partial dislocations and stacking faults in 4H-SiC PiN diodes by TWIGG, M. E, STAHLBUSH, R. E, FATEMI, M, ARTHUR, S. D, FEDISON, J. B, TUCKER, J. B, WANG, S

“…Using plan-view transmission electron microscopy (TEM), we have identified stacking faults (SFs) in 4H-SiC PiN diodes subjected to both light and heavy…”
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Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nm by Cao, X.A., Yan, C.H., D’Evelyn, M.P., LeBoeuf, S.F., Kretchmer, J.W., Klinger, R., Arthur, S.D., Merfeld, D.W.

“…Near-ultraviolet InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) grown homoepitaxially on a free standing GaN substrate exhibited improved…”
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Comparison of recovery from anaesthesia induced in children with either propofol or thiopentone by Runcie, C J, Mackenzie, S J, Arthur, D S, Morton, N S

“…We studied 102 children undergoing day-case surgery, allocated randomly to receive either thiopentone 5 mg kg-1 or propofol 3 mg kg-1 i.v. at induction of…”
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Cathodoluminescence mapping and selective etching of defects in bulk GaN by Lu, Hai, Cao, X.A., LeBoeuf, S.F., Hong, H.C., Kaminsky, E.B., Arthur, S.D.

“…Cathodoluminescence (CL) mapping and selective-etching techniques were used to characterize defects in free-standing bulk GaN substrates prepared by hydride…”
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Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses by Cao, X.A., Sandvik, P.M., LeBoeuf, S.F., Arthur, S.D.

“…Electrical and optical degradations of GaN/InGaN single-quantum-well light-emitting diodes (LEDs) under high-injection current (150 A/cm 2) and reverse-bias…”
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Local anaesthetic techniques in paediatric surgery by Arthur, D S, McNicol, L R

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Revision Rates after Knee Replacement in the United States by Heck, David A., Melfi, Catherine A., Mamlin, Lorri A., Katz, Barry P., Arthur, Daniel S., Dittus, Robert S., Freund, Deborah A.

“…Objectives. Each year approximately 100,000 Medicare patients undergo knee replacement surgery. Patients, referring physicians, and surgeons must consider a…”
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Optimization of the active region of InGaN ∕ GaN 405 nm light emitting diodes using statistical design of experiments for determination of interaction effects by Grandusky, J. R., Jamil, M., Shahedipour-Sandvik, F., DeLuca, J. A., LeBoeuf, S. F., Cao, X. A., Arthur, S. D.

“…Output performance of InGaN based violet light emitting diode structures emitting at 405 nm was optimized using the statistical design of experiments (DOE)…”
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13C and 2D NMR Analysis of Propylene Polymers Made with α-Diimine Late Metal Catalysts by McCord, E. F, McLain, S. J, Nelson, L. T. J, Arthur, S. D, Coughlin, E. B, Ittel, S. D, Johnson, L. K, Tempel, D, Killian, C. M, Brookhart, M

“…Late transition metal catalysts bearing α-diimine ligands allow ethylene and α-olefin homo- and copolymerizations to polyolefins with unprecedented structures…”
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