Search Results - "Arsentyev, I. N."

Properties of Compliant Substrates Based on Porous Silicon Formed by Two-stage Etching by Seredin, P. V., Len’shin, A. S., Radam, Ali Obaid, Khuder, Abduljabbar Riyad, Goloshchapov, D. L., Harajidi, M. A., Arsentyev, I. N., Kasatkin, I. A.

“…—Our work reports on the influence of etching modes and their combination on the design, microstructural and optical properties of compliant substrates based…”
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Spectroscopic Studies of Integrated GaAs/Si Heterostructures by Seredin, P. V., Goloshchapov, D. L., Arsentyev, I. N., Nikolaev, D. N., Pikhtin, N. A., Slipchenko, S. O.

“…The purpose of the study is to investigate the effect of a new type of compliant substrates based on an AlGaAs superstructure layer (SL) and a protoporous Si…”
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Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon by Seredin, P. V., Goloshchapov, D. L., Khudyakov, Yu. Yu, Arsentyev, I. N., Nikolaev, D. N., Pikhtin, N. A., Slipchenko, S. O., Leiste, Harald

“…The purpose of the study is to investigate the effect of a new type of compliant substrate based on an AlGaAs superstructure layer (SL) and a protoporous Si…”
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On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon by Seredin, P. V., Radam, Ali Obaid, Goloshchapov, D. L., Len’shin, A. S., Buylov, N. S., Barkov, K. A., Nesterov, D. N., Mizerov, A. M., Timoshnev, S. N., Nikitina, E. V., Arsentyev, I. N., Sharafidinov, Sh, Kukushkin, S. A., Kasatkin, I. A.

“…—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a…”
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Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate by Seredin, P. V., Goloshchapov, D. L., Zolotukhin, D. S., Lenshin, A. S., Mizerov, A. M., Arsentyev, I. N., Leiste, Harald, Rinke, Monika

“…The possibility of synthesizing integrated GaN/por-Si heterostructures by plasma-assisted molecular beam epitaxy without an A1N/Si buffer layer is…”
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Experimental study of structural and optical properties of integrated MOCVD GaAs/Si(001) heterostructures by Seredin, P.V., Lenshin, A.S., Zolotukhin, D.S., Arsentyev, I.N., Nikolaev, D.N., Zhabotinskiy, A.V.

“…This is the first report of the control of the structural and optical functional characteristics of integrated GaAs/Si(001) heterostructures due to the use of…”
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On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates by Seredin, P. V., Fedyukin, A. V., Terekhov, V. A., Barkov, K. A., Arsentyev, I. N., Bondarev, A. D., Fomin, E. V., Pikhtin, N. A.

“…Thin AlN nanofilms are produced by reactive ion-plasma deposition onto GaAs(100) substrates misoriented with respect to the 〈100〉 direction to different…”
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Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment by Sladkopevtsev, B. V., Kotov, G. I., Arsentyev, I. N., Shashkin, I. S., Mittova, I. Ya, Tomina, E. V., Samsonov, A. A., Kostenko, P. V.

“…Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V 2 O 5 and MnO 2 nanolayers. The…”
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Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates by Seredin, P. V., Goloshchapov, D. L., Zolotukhin, D. S., Lenshin, A. S., Khudyakov, Yu. Yu, Mizerov, A. M., Timoshnev, S. N., Arsentyev, I. N., Beltyukov, A. N., Leiste, Harald, Kukushkin, S. A.

“…A set of structural and spectroscopic methods of diagnostics is used to study the influence of a nanoporous silicon ( por -Si) transition layer on the…”
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Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy by Seredin, P. V., Lenshin, A. S., Zolotukhin, D. S., Goloshchapov, D. L., Mizerov, A. M., Arsentyev, I. N., Beltyukov, A. N.

“…The influence of using a buffer sublayer of nanoporous por-Si on the morphological, physical, and structural properties of nanocolumnar In x Ga 1 – x N…”
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Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100) by Seredin, P. V., Lenshin, A. S., Fedyukin, A. V., Arsentyev, I. N., Zhabotinsky, A. V., Nikolaev, D. N., Leiste, H., Rinke, M.

“…The influence of the degree of misorientation and treatment of a GaAs substrate on the structural and optical characteristics of homoepitaxial GaAs/GaAs(100)…”
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Experimental studies of the effects of atomic ordering in epitaxial Ga x In1 – x P alloys on their optical properties by Seredin, P. V., Goloshchapov, D. L., Lenshin, A. S., Lukin, A. N., Khudyakov, Yu. Yu, Arsentyev, I. N., Prutskij, Tatiana

“…The properties of epitaxial GaxIn1 – xP alloys with an ordered arrangement of atoms in the crystal lattice are studied by a number of spectroscopic methods…”
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Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide by Seredin, P. V., Lenshin, A. S., Fedyukin, A. V., Goloshchapov, D. L., Lukin, A. N., Arsentyev, I. N., Zhabotinsky, A. V.

“…The properties of porous GaAs samples produced by the electrochemical etching of single-crystal n -GaAs(100) wafers are studied by X-ray diffraction analysis,…”
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Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy by Seredin, P. V., Goloshchapov, D. L., Zolotukhin, D. S., Lenshin, A. S., Lukin, A. N., Khudyakov, Yu. Yu, Arsentyev, I. N., Zhabotinsky, A. V., Nikolaev, D. N., Pikhtin, N. A.

“…It is shown for the first time that the structural and optical functional characteristics of integrated GaAs/Si(100) heterostructures can be controlled by…”
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Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition by Seredin, P.V., Terekhov, V.A., Barkov, K.A., Arsentyev, I.N., Bondarev, A.D.

“…With the use of reactive plasma-ion deposition, thin nano-sized films of AlN were obtained on the substrates of GaAs(100) with a different degree of…”
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Experimental studies of the effects of atomic ordering in epitaxial Ga x In1–x P alloys on their structural and morphological properties by Seredin, P. V., Lenshin, A. S., Khudyakov, Yu. Yu, Arsentyev, I. N., Kaliuzhny, N. A., Mintairov, S. A., Nikolaev, D. N., Prutskij, Tatiana

“…The properties of epitaxial GaxIn1–xP alloys with an ordered arrangement of atoms in the crystal lattice are studied by a number of structural and microscopic…”
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Structural and optical studies of thin films of aluminum nitride grown via ion-plasma sputtering on gallium arsenide substrates with different orientations by Seredin, P. V., Goloschapov, D. A., Lenshin, A. S., Ternovaya, V. E., Arsentyev, I. N., Bondarev, A. D., Tarasov, I. S.

“…IR and UV spectroscopy is used to study the properties of nanostructured aluminum nitride films obtained via reactive ion-plasma sputtering on GaAs substrates…”
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Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates by Seredin, P. V., Goloshchapov, D. L., Lenshin, A. S., Lukin, A. N., Fedyukin, A. V., Arsentyev, I. N., Bondarev, A. D., Lubyanskiy, Y. V., Tarasov, I. S.

“…Nanostructured aluminum-nitride films are formed by reactive ion-plasma sputtering onto GaAs substrates with different orientations. The properties of the…”
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Raman investigation of low temperature AlGaAs/GaAs(1 0 0) heterostructures by Seredin, P.V., Glotov, A.V., Domashevskaya, E.P., Arsentyev, I.N., Vinokurov, D.A., Tarasov, I.S.

“…Method of Raman backscattering allowed one to study the substructure of epitaxial low temperature MOCVD AlGaAs/GaAs(1 0 0) heterostructures. It is shown that…”
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Investigations of porous InP properties by XRD, IR, USXES, XANES and PL techniques by Domashevskaya, E.P., Kashkarov, V.M., Seredin, P.V., Terekhov, V.A., Turishchev, S.Yu, Arsentyev, I.N., Ulin, V.P.

“…The work is concerned with complex investigations of the layers of porous indium phosphide (por-InP) using X-ray diffraction and IR-spectroscopy, ultrasoft…”
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