Search Results - "Arsentiev, I.N."

Laser heterostructures with a broadened MQW waveguide for high-power and sub-ns-laser-pulse-width operation by Slipchenko, S.O., Podoskin, A.A., Golovin, V.S., Shamakhov, V.V., Arsentiev, I.N., Bondarev, A.D., Nikolaev, D.N., Pikhtin, N.A., Kop'ev, P.S.

“…Design of a structure with QWs distributed in a broadened waveguide layer is presented, which ensures mode selection, preserves the fundamental mode, provides…”
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Ultrathin nano-sized Al2O3 strips on the surface of por-Si by Seredin, P.V., Lenshin, A.S., Kashkarov, V.M., Lukin, A.N., Arsentiev, I.N., Bondarev, A.D., Tarasov, I.S.

“…The objective of this paper is to obtain nano-sized Al2O3 strips on the surface of nanoporous silicon surface as well as fundamental investigations of…”
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Epitaxial [Al.sub.x][Ga.sub.x-1]As:Mg alloys with different conductivity types by Seredin, P.V, Lenshin, A.S, Arsentiev, I.N, Zhabotinskii, A.V, Nikolaev, D.N, Tarasov, I.S, Shamakhov, V.V, Prutskij, Tatiana, Leiste, Harald, Rinke, Monika

“…The structural, optical, and energy properties of epitaxial [Al.sub.x][Ga.sub.1-x]As:Mg/GaAs(100) heterostructures at different levels of doping with Mg are…”
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AlxGa1−xAs/GaAs heterostructures with abnormally high mobility of charge carriers by Seredin, P.V., Lenshin, A.S., Arsentiev, I.N., Tarasov, I.S.

“…Using structural and spectroscopic methods, we have studied epitaxial layers of AlxGa1−xAs solid solutions with n-conductivity obtained by means of MOCVD…”
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High power photoactivated current switches for generating sub-ns electrical pulses by Shushkanov, I.V., Podoskin, A.A., Arsentiev, I.N., Rudova, N.A., Klimov, A.A., Kazakova, A.E., Slipchenko, S.O., Pikhtin, N.A.

“…Photoactivated current switches for pumping diode laser stacks with ns and sub-ns current pulses are studied. Test optical pulse: 860 nm, 50 ps leading edge,…”
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Physics-Technological Fabrication Features and Parameters of InP MM-Wave Gunn Diodes by Arsentiev, I.N., Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Kovtonyuk, V.M., Konakova, R.V., Kudryk, Ya.Ya, Milenin, V.V., Tarasov, I.S., Markovskyi, E.P., Redko, R.A., Russu, E.V.

“…We developed (i) a technology to form Au-Ge-TiB x -Au ohmic contacts to indium phosphide Gunn diodes on the basis of n-n + -n ++ epitaxial structures made on…”
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New technological possibilities for formation of GaAs and InP epitaxial layers for Gunn diodes by Arsentiev, I.N., Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya, Milenin, V.V., Taraso, I.S., Markovsky, E.P., Rusu, E.V.

“…We consider a novel technological approach to formation of structurally-perfect indium-phosphide and gallium-arsenide epitaxial n-layers grown on specially…”
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New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis by Arsentiev, I.N., Bobyi, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Y.Y., Lytvyn, O.S., Milenin, V.V., Tarasov, I.S., Belyaev, A.E., Rusu, E.V.

“…A new technological approach to production of structurally perfect epitaxial films LPE-grown on "soft" porous n/sup +/-InP substrates is considered. We studied…”
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