Search Results - "Arsentiev, I. N."

Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy by Seredin, P. V., Barkov, K. A., Goloshchapov, D. L., Lenshin, A. S., Khudyakov, Yu. Yu, Arsentiev, I. N., Lebedev, A. A., Sharofidinov, Sh. Sh, Mizerov, A. M., Kasatkin, I. A., Prutskij, Tatiana

“…The growth of GaN films on preliminarily treated Si(001) substrates by chloride–hydride vapor-phase epitaxy through a buffer layer is reported. It is…”
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Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures by Seredin, P. V., Goloshchapov, D. L., Zolotukhin, D. S., Lenshin, A. S., Mizerov, A. M., Timoshnev, S. N., Nikitina, E. V., Arsentiev, I. N., Kukushkin, S. A.

“…Using a complex of structural and spectroscopic methods of diagnostics, the influence of a nanoporous-silicon ( por -Si) transition layer on the optical…”
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Epitaxial Al x Ga1 – x As:Mg alloys with different conductivity types by Seredin, P. V., Lenshin, A. S., Arsentiev, I. N., Zhabotinskii, A. V., Nikolaev, D. N., Tarasov, I. S., Shamakhov, V. V., Prutskij, Tatiana, Leiste, Harald, Rinke, Monika

“…The structural, optical, and energy properties of epitaxial AlxGa1 – xAs:Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by…”
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Design of semiconductor lasers for generation of high-power sub-ns laser pulses in the gain switching mode by Slipchenko, S. O., Podoskin, A. A., Golovin, V. S., Shamakhov, V. V., Arsentiev, I. N., Vaviliva, L. S, Lyutetskiy, A. V., Nikolaev, D. N., Pikhtin, N. A., Kopev, P. S.

“…For the first time, an analysis of a series of laser heterostructures with different active-region designs and cavity parameters is performed to solve the…”
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Laser/heterothyristor hybrid assemblies based on AlGaAs/GaAs heterostructures for high-power and ns-laser-pulse-width operation by Slipchenko, S. O., Podoskin, A. A., Golovin, V. S., Gavrina, P. S., Shamakhov, V. V., Arsentiev, I. N., Bondarev, A. D., Nikolaev, D. N., Zolotarev, V. V., Pikhtin, N. A., Bagaev, T. A., Ladugin, M. A., Marmalyuk, A. A., Simakov, V. A.

“…High-power lasers and mini diode laser bars based on AlGaAs/InGaAs/GaAs heterostructures (1060 nm) demonstrate high-efficient generation of pulses with…”
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Ultrathin nano-sized Al2O3 strips on the surface of por-Si by Seredin, P.V., Lenshin, A.S., Kashkarov, V.M., Lukin, A.N., Arsentiev, I.N., Bondarev, A.D., Tarasov, I.S.

“…The objective of this paper is to obtain nano-sized Al2O3 strips on the surface of nanoporous silicon surface as well as fundamental investigations of…”
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AlxGa1−xAs/GaAs heterostructures with abnormally high mobility of charge carriers by Seredin, P.V., Lenshin, A.S., Arsentiev, I.N., Tarasov, I.S.

“…Using structural and spectroscopic methods, we have studied epitaxial layers of AlxGa1−xAs solid solutions with n-conductivity obtained by means of MOCVD…”
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Epitaxial Al{sub x}Ga{sub 1–x}As:Mg alloys with different conductivity types by Seredin, P. V., Lenshin, A. S., Arsentiev, I. N., Zhabotinskii, A. V., Nikolaev, D. N., Tarasov, I. S., Shamakhov, V. V., Prutskij, Tatiana, Leiste, Harald, Rinke, Monika

“…The structural, optical, and energy properties of epitaxial Al{sub x}Ga{sub 1–x}As:Mg/GaAs(100) heterostructures at different levels of doping with Mg are…”
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Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types by Seredin, P. V., Lenshin, A. S., Arsentiev, I. N., Zhabotinskii, A. V., Nikolaev, D. N., Tarasov, I. S., Shamakhov, V. V., Prutskij, Tatiana, Leiste, Harald, Rinke, Monika

“…The structural, optical, and energy properties of epitaxial Al x Ga 1 – x As:Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by…”
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Ohmic contacts based on Pd to indium phosphide Gunn diodes by Belyaev, A. E.

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Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy by Seredin, P. V., Kurilo, N. A., Radam, Ali O., Builov, N. S., Goloshchapov, D. L., Ivkov, S. A., Lenshin, A. S., Arsentiev, I. N., Nashchekin, A. V., Sharofldinov, Sh. Sh, Mizerov, A. M., Sobolev, M. S., Pirogov, E. V., Semeykin, I. V.

“…In this study, we analyzed the result of the influence of the non-polar plane of a sapphire substrate on the structural, morphological, and optical properties…”
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Laser heterostructures with a broadened MQW waveguide for high-power and sub-ns-laser-pulse-width operation by Slipchenko, S.O., Podoskin, A.A., Golovin, V.S., Shamakhov, V.V., Arsentiev, I.N., Bondarev, A.D., Nikolaev, D.N., Pikhtin, N.A., Kop'ev, P.S.

“…Design of a structure with QWs distributed in a broadened waveguide layer is presented, which ensures mode selection, preserves the fundamental mode, provides…”
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New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis by Arsentiev, I.N., Bobyi, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Y.Y., Lytvyn, O.S., Milenin, V.V., Tarasov, I.S., Belyaev, A.E., Rusu, E.V.

“…A new technological approach to production of structurally perfect epitaxial films LPE-grown on "soft" porous n/sup +/-InP substrates is considered. We studied…”
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Physics-Technological Fabrication Features and Parameters of InP MM-Wave Gunn Diodes by Arsentiev, I.N., Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Kovtonyuk, V.M., Konakova, R.V., Kudryk, Ya.Ya, Milenin, V.V., Tarasov, I.S., Markovskyi, E.P., Redko, R.A., Russu, E.V.

“…We developed (i) a technology to form Au-Ge-TiB x -Au ohmic contacts to indium phosphide Gunn diodes on the basis of n-n + -n ++ epitaxial structures made on…”
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New technological possibilities for formation of GaAs and InP epitaxial layers for Gunn diodes by Arsentiev, I.N., Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya, Milenin, V.V., Taraso, I.S., Markovsky, E.P., Rusu, E.V.

“…We consider a novel technological approach to formation of structurally-perfect indium-phosphide and gallium-arsenide epitaxial n-layers grown on specially…”
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