Search Results - "Arreghini, A."

Modeling the Operation of Charge Trap Flash Memory-Part I: The Importance of Carrier Energy Relaxation by Schanovsky, F., Verreck, D., Stanojevic, Z., Schallert, S., Arreghini, A., van den Bosch, G., Rosmeulen, M., Karner, M.

“…We present a novel approach to the modeling of carrier energy relaxation during high-field phases in semiconductor-oxide-nitride-oxide-semiconductor (SONOS)…”
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A methodology for mechanical stress and wafer warpage minimization during 3D NAND fabrication by Kruv, A., Gonzalez, M., Okudur, O.O., Spampinato, V., Franquet, A., Palayam, S.V., Arreghini, A., Van den bosch, G., Rosmeulen, M., De Wolf, I.

“…The introduction of the 3D NAND architecture brought new integration challenges, including the impact of fabrication-induced mechanical stress. If not…”
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A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash by Ramesh, S., Banerjee, K., Opsomer, K., Rachita, I., Bastos, J. P., Soulie, J-Ph, Sebaai, F., Favia, P., Korytov, M., Richard, O., Breuil, L., Arreghini, A., Van Den Bosch, G., Rosmeulen, M.

“…In this letter, a Ni-Al alloy based metal induced lateral crystallization (MILC) process in a vertical Si channel, from 3-D NAND flash cell, is reported…”
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Program charge interference and mitigation in vertically scaled single and multiple-channel 3D NAND flash memory by Verreck, D., Arreghini, A., den Bosch, G. Van, Furnemont, A., Rosmeulen, M.

“…Vertical pitch scaling and channel splitting are under active research to increase bit density in 3D NAND flash memories. Here, we use 3D TCAD simulations to…”
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Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND by Tiernc, D., Arreghini, A., Lesniewska, A., Jeong, Y., van der Veen, M. H., Stiers, J., Bazzazian, N., Ciofi, I., Van den Bosch, G., Rosmeulen, M.

“…In this work, we evaluate the scaling limits of inter-word line oxides for 3D NAND Flash devices. We test different oxide stacks by mimicking the stacked…”
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Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance by Higashi, Y., Bastos, J. P., Chasin, A., Breuil, L., Arreghini, A., Ramesh, S., Rachidi, S., Jeong, Y., Van den bosch, G., Rosmeulen, M.

“…Ferroelectricity boosted gate stacks, such as dual ferroelectric layer and charge trap layer (dual FE-CTL), have been proposed and confirmed to lead to…”
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Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices by Maconi, A., Arreghini, A., Monzio Compagnoni, C., Van den bosch, G., Spinelli, A.S., Van Houdt, J., Lacaita, A.L.

“…► Experimental evidence of lateral charge migration in planar device is shown. ► A 2D model able to reproduce the retention transients is developed. ► The…”
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Unexpected artefacts and occult pathologies under CBCT by Lombardo, L, Arreghini, A, Guarneri, M P, Lauritano, D, Nardone, M, Siciliani, G

“…To present the most frequent occult pathologies unexpectedly encountered via cone-beam computed tomography (CBCT), with particular reference to the diagnostic…”
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Validation of Retention Modeling as a Trap-Profiling Technique for SiN-Based Charge-Trapping Memories by Suhane, A., Arreghini, A., Degraeve, R., Van den bosch, G., Breuil, L., Zahid, M.B., Jurczak, M., De Meyer, K., Van Houdt, J.

“…We applied the developed trap spectroscopy by charge injection and sensing to validate the extraction of the silicon nitride trap distribution (both in space…”
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Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory by Van den bosch, G., Kar, G. S., Blomme, P., Arreghini, A., Cacciato, A., Breuil, L., De Keersgieter, A., Paraschiv, V., Vrancken, C., Douhard, B., Richard, O., Van Aerde, S., Debusschere, I., Van Houdt, J.

“…A vertical cylindrical SONOS cell with a novel bilayer polysilicon channel down to 22-nm diameter for 3-D NAND Flash memory is successfully developed. We…”
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Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling by Lee, K.H., Degraeve, R., Toledano-Luque, M., Arreghini, A., Breuil, L., Blomme, P., Van den bosch, G., Van Houdt, J.

“…We comprehensively investigate defects in 3-D SONOS devices (macaroni vs. full channel) in fresh state and after program/erase cycling endurance stress with…”
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3D TCAD Model for Poly-Si Channel Current and Variability in Vertical NAND Flash Memory by Verreck, D., Arreghini, A., Schanovsky, F., Stanojevic, Z., Steiner, K., Mitterbauer, F., Karner, M., Van den bosch, G., Furnemont, A.

“…The polycrystalline nature of state-of-the-art 3D NAND flash channels complicates on-current and variability modeling. We have therefore developed a 3D TCAD…”
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Long term charge retention dynamics of SONOS cells by Arreghini, A., Akil, N., Driussi, F., Esseni, D., Selmi, L., van Duuren, M.J.

“…We present a model for charge retention dynamics in SONOS non volatile memory cells which accounts for the space and energy distributions of the trapped charge…”
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Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells by Vianello, E., Driussi, F., Arreghini, A., Palestri, P., Esseni, D., Selmi, L., Akil, N., van Duuren, M.J., Golubovic, D.S.

“…A new characterization technique and an improved model for charge injection and transport through ONO gate stacks are used to investigate the program/retention…”
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Electron Trap Profiling Near Al2O3/Gate Interface in TANOS Stack Using Gate-Side Trap Spectroscopy by Charge Injection and Sensing by ZAHID, M. B, ARREGHINI, A, DEGRAEVE, R, GOVOREANU, B, SUHANE, A, VAN HOUDT, J

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Respiratory disorders in paediatric age: orthodontic diagnosis and treatment in dysmetabolic obese children and allergic slim children by Favero, L, Arreghini, A, Cocilovo, F, Favero, V

“…Obesity and allergic susceptibility are worsening problems in the most industrialised countries. With different mechanisms, they both lead to a deterioration…”
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Application of Single Pulse Dynamics to Model Program and Erase Cycling-Induced Defects in the Tunnel Oxide of Charge-Trapping Devices by Bastos, J. P., Arreghini, A., Verreck, D., Schanovsky, F., Degraeve, R., Linten, D., Rosmeulen, M., Van den Bosch, G., Furnemont, A.

“…3D NAND, the mainstream technology for high density Flash application [1], is typically based on the charge trapping paradigm, i.e. it relies on the storage of…”
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First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices by Delhougne, R., Arreghini, A., Rosseel, E., Hikavyy, A., Vecchio, E., Zhang, L., Pak, M., Nyns, L., Raymaekers, T., Jossart, N., Breuil, L., V-Palayam, S. S., Tan, C.-L., Van den bosch, G., Furnemont, A.

“…We are demonstrating for the first time epi-based monocrystalline silicon macaroni channel 3-D NAND devices. The highly controllable channel replacement…”
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Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory by Florent, K., Pesic, M., Subirats, A., Banerjee, K., Lavizzari, S., Arreghini, A., Di Piazza, L., Potoms, G., Sebaai, F., McMitchell, S. R. C., Popovici, M., Groeseneken, G., Van Houdt, J.

“…A vertical ferroelectric HfO 2 field effect transistor based on 3-D macaroni NAND architecture is reported for the first time. Up to 2 V memory window was…”
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Experimental Characterization of the Vertical Position of the Trapped Charge in Si Nitride-Based Nonvolatile Memory Cells by Arreghini, A., Driussi, F., Vianello, E., Esseni, D., van Duuren, M.J., Golubovic, D.S., Akil, N., van Schaijk, R.

“…We present a broad set of experiments on silicon nitride-based memories aimed at the investigation of the vertical position of the charge trapped in the…”
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