Molecular functionalization of tantalum oxide surface towards development of apatite growth

We have studied the apatite growth dynamics on tantalum oxide surfaces. This nucleation is obtained via an organosilane intermediate layer between the apatite and the substrate surface. Four organosilane layers (differing by their terminal functionality) were investigated. Their characterization wit...

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Bibliographic Details
Published in:	Applied surface science Vol. 255; no. 9; pp. 4765 - 4772
Main Authors:	Aubry, D., Volcke, C., Arnould, Ch, Humbert, C., Thiry, P.A., Delhalle, J., Mekhalif, Z.
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 15-02-2009 Elsevier
Subjects:	Apatite Atomic force microscopy Biomaterials Chemical Physics Condensed Matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Exact sciences and technology Materials Science Physics Self-assembled monolayers Tantalum X-ray photoelectron spectroscopy Atomic force microscopy Apatite Tantalum Self-assembled monolayers X-ray photoelectron spectroscopy Biomaterials Transition elements Self-assembled layers X-ray photoelectron spectra
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Summary:	We have studied the apatite growth dynamics on tantalum oxide surfaces. This nucleation is obtained via an organosilane intermediate layer between the apatite and the substrate surface. Four organosilane layers (differing by their terminal functionality) were investigated. Their characterization with atomic force microscopy and other techniques such as X-ray photoelectron spectroscopy (XPS) and wetting measurements highlighted the influence of the organosilane terminal groups on the apatite growth rates. Results revealed that apatite is indeed growing faster on phosphate terminal groups than on the three other groups studied (vinyl, hydroxyl and carboxyl).
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0169-4332 1873-5584
DOI:	10.1016/j.apsusc.2008.11.022