Search Results - "Arnauts, S."

Validation of vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis of silicon wafers by Hellin, D., Rip, J., Arnauts, S., De Gendt, S., Mertens, P.W., Vinckier, C.

“…The combination of vapor phase decomposition–droplet collection (VPD–DC) with total reflection-X-ray fluorescence spectrometry (TXRF) is a well-established…”
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Analysis of trace metals in thin silicon nitride films by total-reflection X-ray fluorescence by Vereecke, G., Arnauts, S., Van Doorne, P., Kenis, K., Onsia, B., Verstraeten, K., Schaekers, M., Van Hoeymissen, J.A.B., Heyns, M.M.

“…The validity of a matrix withdrawal method for the analysis of trace metals in silicon nitride films on silicon wafers by total-reflection X-ray fluorescence…”
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A synchrotron radiation photoelectron spectroscopy study on atomic-scale wet etching of InAs (111)-A and (111)-B in acidic peroxide solutions: surface chemistry versus kinetics by Abrenica, G.H.A., Lebedev, M.V., Fingerle, M., Arnauts, S., Calvet, W., Mayer, T., de Gendt, S., van Dorp, D.H.

“…Anisotropy in the wet-chemical surface oxidation of indium arsenide (InAs) (111) in HCl/H2O2 and H2SO4/H2O2 was investigated. The atomic-scale etching kinetics…”
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Implementation of the IMEC-Clean in advanced CMOS manufacturing by Meuris, M., Arnauts, S., Cornelissen, I., Kenis, K., Lux, M., Degendt, S., Mertens, P., Teerlinck, I., Vos, R., Loewenstein, L., Heyns, M.M., Wolke, K.

“…We present data measured using the wet bench in the prototyping line of IMEC. This wet bench has been running for 3 years an IMEC Clean for prediffusion cleans…”
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A high performance drying method enabling clustered single wafer wet cleaning by Mertens, P.W., Doumen, G., Lauerhaas, J., Kenis, K., Fyen, W., Meuris, M., Arnauts, S., Devriendt, K., Vos, R., Heyns, M.

“…A novel fast drying method for single wafer wet cleaning is proposed. The water-mark free drying method is based on an efficient interaction between Marangoni…”
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Strain enhanced FUSI/HfSiON Technology with optimized CMOS Process Window by Veloso, A., Arnauts, S., Loo, R., Lauwers, A., Conard, T., de Marneffe, J.-F., Goossens, D., Baute, D., Locorotondo, S., Chiarella, T., Kerner, C., Verheyen, P., Vrancken, C., Mertens, S., O'Sullivan, B. J., Yu, H. Y., Chang, S.-Z., Niwa, M., Kittl, J. A., Absil, P. P., Jurczak, M., Hoffmann, T., Vos, R., Biesemans, S., Brus, S., Ito, S., Mitsuhashi, R., Paraschiv, V., Shi, X., Onsia, B.

“…We report, for the first time, a comprehensive study on the compatibility of state-of-the-art performance boosters with FUSI/HfSiON technology, resulting in…”
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Roadblocks and Critical Aspects of Cleaning for Sub-65nm Technologies by Mertens, P.W., Vereecke, G., Vos, R., Arnauts, S., Barbagini, F., Bearda, T., Degendt, S., Demaco, C., Eitoku, A., Frank, M., Fyen, W., Hall, L., Hellin, D., Holsteyns, F., Kesters, E., Claes, M., Kim, K., Kenis, K., Kraus, H., Hoyer, R., Le, T.Q., Lux, M., Lee, K.-T., Kocsis, M., Kotani, T., Malhouitre, S., Muscat, A., Onsia, B., Garaud, S., Rip, J., Sano, K., Sioncke, S., Snow, J., Van Hoeymissen, J., Wostyn, K., Xu, K., Parachiev, V., Heyns, M.

“…This study will review some of the critical aspects of cleaning for sub-65 nm technologies. These issues include: surface preparation for high k dielectrics on…”
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