Search Results - "Arnaud D'Avitaya, F."

Effect of the electrolyte temperature on the formation and structure of porous anodic titania film by Lazarouk, S.K., Sasinovich, D.A., Kupreeva, O.V., Orehovskaia, T.I., Rochdi, N., d'Avitaya, F. Arnaud, Borisenko, V.E.

“…The porous titania growth during electrochemical anodization of titanium films and foils in the 0.1M ammonium fluoride (FNH4) solution in ethyleneglycol has…”
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Surface morphology and structure of ultra-thin magnesium oxide grown on (100) silicon by atomic layer deposition oxidation by Rochdi, N., Liudvikouskaya, K., Descoins, M., Raïssi, M., Coudreau, C., Lazzari, J.-L., Oughaddou, H., D'Avitaya, F. Arnaud

“…Ultra-thin magnesium oxide layers were elaborated by atomic layer deposition and oxidation process on silicon (100) starting from (2 × 1)…”
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Structural, electronic and optical properties of II-IV-N2 compounds (II = Be, Zn; IV = Si, Ge) by Shaposhnikov, V. L., Krivosheeva, A. V., Arnaud D'Avitaya, F., Lazzari, J.-L., Borisenko, V. E.

“…A detailed study of structural, electronic and optical properties of II–IV–N2 ternary compounds (II = Be, Zn; IV = Si, Ge) has been performed by means of ab…”
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Effects of Morphology on Stability, Electronic, and Optical Properties of Rutile TiO2 Nanowires by Migas, D. B, Shaposhnikov, V. L, Borisenko, V. E, Arnaud D’Avitaya, F

“…By means of first principles calculations we show that morphology of TiO2 nanowires in the rutile phase turns out to be important in their stability and band…”
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Electronic structure and optical properties of Si1-xGex alloys by BEN ZID, F, BHOURI, A, MEJRI, H, SAID, M, BOUARISSA, N, LAZZARI, J.-L, D'AVITAYA, F. Arnaud, DERRIEN, J

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Interfacial solid phase reactions in cobalt/aluminum oxide/silicon(001) system by Raïssi, M., Vizzini, S., Langer, G., Rochdi, N., Oughaddou, H., Coudreau, C., Nitsche, S., D'Avitaya, F. Arnaud, Aufray, B., Lazzari, J.-L.

“…Auger electron spectroscopy, secondary neutral mass spectrometry and high-resolution transmission electron microscopy were used to assess the chemical,…”
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Silicon quantum integrated circuits – an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques by Paul, D.J, Coonan, B, Redmond, G, O’Neill, B.J, Crean, G.M, Holländer, B, Mantl, S, Zozoulenko, I, Berggren, K.-F, Lazzari, J.-L, Arnaud d’Avitaya, F, Derrien, J

“…An introduction to the methodology, design concepts, fabrication routes and potential applications is presented of research to fabricate quantum devices on a…”
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Controlled growth of aluminum oxide thin films on hydrogen terminated Si(0 0 1) surface by Vizzini, S., Oughaddou, H., Léandri, C., Lazarov, V.K., Kohn, A., Nguyen, K., Coudreau, C., Bibérian, J.-P., Ealet, B., Lazzari, J.-L., Arnaud d’Avitaya, F., Aufray, B.

“…Auger electron spectroscopy, energy electron loss spectroscopy, atomic force microscopy and transmission electron microscopy were used to characterize…”
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Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer by El Asri, T., Raissi, M., Vizzini, S., Maachi, A. El, Ameziane, E.L., d’Avitaya, F. Arnaud, Lazzari, J.-L., Coudreau, C., Oughaddou, H., Aufray, B., Kaddouri, A.

“…Optical emission spectroscopy of sputtered species during ion bombardment, Auger electron spectroscopy and high-resolution transmission electron microscopy…”
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Investigation of Si/SiGe heterostructure material using non-destructive optical techniques by COONAN, B. P, GRIFFIN, N, D'AVITAYA, F. A, DERRIEN, J, PAUL, D. J, BEECHINOR, J. T, MURTAGH, M, REDMOND, G, CREAN, G. M, HOLLÄNDER, B, MANTL, S, BOZZO, S, LAZZARI, J.-L

“…Characterization of UHV-CVD (ultra high vacuum chemical vapour deposition) grown Si/SiGe heterostructure field-effect transistor (HFET) material with a buried,…”
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Structural, electronic and optical properties of II–IV–N 2 compounds (II = Be, Zn; IV = Si, Ge) by Shaposhnikov, V. L., Krivosheeva, A. V., Arnaud D'Avitaya, F., Lazzari, J.‐L., Borisenko, V. E.

“…A detailed study of structural, electronic and optical properties of II–IV–N 2 ternary compounds (II = Be, Zn; IV = Si, Ge) has been performed by means of ab…”
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Growth of magnetic tunnel junctions on Si(001) substrates by Olive Mendez, S., Le Thanh, V., Ozerov, I., Ferrero, S., Coudreau, C., Lazzari, J.-L., Arnaud d'Avitaya, F., Ravel, L., Boivin, P.

“…We present in this work the growth of magnetic tunnel junctions on Si(001) substrates using a template layer technique and the implementation of the…”
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Electroluminescence from silicon nanocrystals in Si/CaF2 superlattices by Ioannou-Sougleridis, V., Nassiopoulou, A. G., Ouisse, T., Bassani, F., Arnaud d’Avitaya, F.

“…Electroluminescence (EL) from silicon nanocrystals in Si/CaF2 superlattices grown by molecular-beam epitaxy at room temperature was investigated and compared…”
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Prospects on Mn-doped ZnGeP2 for spintronics by KRIVOSHEEV, A. V, SHAPOSHNIKOV, V. L, LYSKOUSKI, V. V, BORISENKO, V. E, ARNAUD D'AVITAYA, F, LAZZARI, J.-L

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Chemical vapor deposition of silicon–germanium heterostructures by Bozzo, S, Lazzari, J.-L, Coudreau, C, Ronda, A, Arnaud d’Avitaya, F, Derrien, J, Mesters, S, Hollaender, B, Gergaud, P, Thomas, O

“…We report on the growth of SiGe/Si heterostructures in a commercial chemical vapor deposition cold-wall vertical reactor using SiH4 and GeH4 gas precursors,…”
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Cascaded resonant tunneling diode quantizer for analog-to-digital flash conversion by Kholod, Alexandre N., Liniger, M., Zaslavsky, A., d’Avitaya, F. Arnaud

“…We propose and model an application of cascaded resonant tunneling diodes to flash analog-to-digital conversion. We connect diodes of linearly increasing area…”
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Infrared response of Pt/Si/ErSi1.7 heterostructure : tunable internal photoemission sensor by PAHUN, L, CAPIDELLI, Y, ARNAUD D'AVITAYA, F, BADOZ, P. A

“…We present the first internal photoemission response of a metal-Si-metal heterostructure. Using the Pt/Si/ErSi1.7 system, we show that the photoresponse of…”
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Step-driven molecular adsorption of Sb on Si(111) by LADEVEZE, M, TREGLIA, G, MÜLLER, P, D'AVITAYA, D. A

“…Adsorption of Sb on a misoriented Si(111) surface is investigated by thermodesorption Auger spectroscopy. The spectra reveal that, in the submonolayer range,…”
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Appearance of direct gap in silicon and germanium nanosize slabs by Kholod, A.N., Borisenko, V.E., Saúl, A., Arnaud d'Avitaya, F., Fuhr, J.

“…Ab initio calculations have been performed to obtain electronic structure of hydrogen terminated silicon and germanium slabs of 0.5–2.0 nm in thickness…”
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Fabrication and structure of epitaxial Er silicide films on (111) Si by ARNAUD D'AVITAYA, F, PERIO, A, OBERLIN, J.-C, CAMPIDELLI, Y, CHROBOCZEK, J. A

“…We prepared Er silicide films on (111) Si by (1) deposition of Er and contact reaction at 380 °C or (2) vacuum codeposition of Er and Si maintaining the flux…”
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