Search Results - "Armstrong, Sarah E."

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  1. 1

    The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs by King, M P, Reed, R A, Weller, R A, Mendenhall, M H, Schrimpf, R D, Alles, M L, Auden, E C, Armstrong, S E, Asai, M

    Published in IEEE transactions on nuclear science (01-12-2010)
    “…Monte-Carlo radiation transport simulations are used to quantify energy deposition from δ -rays in sensitive volumes representative of future SRAM…”
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    Journal Article
  2. 2

    Neurocognitive and clinical characteristics of elementary school-aged children with a history of suicidal thoughts and behaviors by Chen, Qi, Armstrong, Sarah E., Vakil, Fatima, Bridge, Jeffrey A., Keilp, John G., Sheftall, Arielle H.

    Published in Journal of affective disorders (15-10-2023)
    “…Suicidal thoughts and behaviors (STBs) in elementary school-aged youth have increased in recent years. Understanding the risks associated with childhood STBs…”
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    Journal Article
  3. 3

    Clinical risk factors, emotional reactivity/regulation and suicidal ideation in elementary school-aged children by Sheftall, Arielle H., Vakil, Fatima, Armstrong, Sarah E., Rausch, Joseph R., Feng, Xin, Kerns, Kathryn A., Brent, David A., Bridge, Jeffrey A.

    Published in Journal of psychiatric research (01-06-2021)
    “…Suicidal behavior (SB) in young children is rare yet in 2019, suicide was the fifth leading cause of death in 5-12-year-old youth. Understanding the risks…”
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    Journal Article
  4. 4

    Single-Event-Hardened CMOS Operational Amplifier Design by Blaine, Raymond W., Atkinson, Nick M., Kauppila, Jeffrey S., Loveless, T. Daniel, Armstrong, Sarah E., Holman, W. Tim, Massengill, Lloyd W.

    Published in IEEE transactions on nuclear science (01-08-2012)
    “…Novel RHBD techniques are described that utilize charge sharing to mitigate single-event voltage transients in a folded cascode operational amplifier. These…”
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    Journal Article
  5. 5

    Leakage Current Degradation of Gallium Nitride Transistors Due to Heavy Ion Tests by Olson, Brian D., Ingalls, J. David, Rice, Casey H., Hedge, Casey C., Cole, Patrick L., Duncan, Adam R., Armstrong, Sarah E.

    “…Commercial gallium nitride high-electron mobility transistors are tested at Texas A&M University cyclotron. Degradation of gate and drain currents is…”
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    Conference Proceeding
  6. 6

    Heavy Ion Testing of Commercial GaN Transistors in the Radio Frequency Spectrum by Armstrong, Sarah E., Bole, Ken, Bradley, Holly, Johnson, Ethan, Staggs, James, Shedd, Walter, Cole, Patrick L., Rice, Casey H., Ingalls, J. David, Hedge, Casey C., Duncan, Adam R., Olson, Brian D.

    “…Commercial gallium nitride (GaN) high-electron mobility transistors (HEMTs) are tested in the radio frequency (RF) spectrum at heavy ion facilities to explore…”
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    Conference Proceeding
  7. 7

    RHBD Technique for Single-Event Charge Cancellation in Folded-Cascode Amplifiers by Atkinson, N. M., Blaine, R. W., Kauppila, J. S., Armstrong, S. E., Loveless, T. Daniel, Hooten, N. C., Holman, W. T., Massengill, L. W., Warner, J. H.

    Published in IEEE transactions on nuclear science (01-08-2013)
    “…A novel RHBD technique that exploits charge sharing is implemented in the single-ended gain stage of a folded-cascode operational amplifier to mitigate…”
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    Journal Article
  8. 8

    Laser-Induced Current Transients in Strained-Si Diodes by Hyunwoo Park, Cummings, D.J., Arora, R., Pellish, J.A., Reed, R.A., Schrimpf, R.D., McMorrow, D., Armstrong, S.E., Roh, U., Nishida, T., Law, M.E., Thompson, S.E.

    Published in IEEE transactions on nuclear science (01-12-2009)
    “…Laser-induced current transients are measured on uniaxially stressed silicon (Si) N+/P diodes using a high speed measurement system. Controlled external…”
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    Journal Article
  9. 9

    Effect of Total Ionizing Dose on a Bulk 130 nm Ring Oscillator Operating at Ultra-Low Power by Casey, M.C., Armstrong, S.E., Arora, R., King, M.P., Ahlbin, J.R., Francis, S.A., Bhuva, B.L., McMorrow, D., Hughes, H.L., McMarr, P.J., Melinger, J.S., Massengill, L.W.

    Published in IEEE transactions on nuclear science (01-12-2009)
    “…Total ionizing dose experiments showed an increase in operating frequency (and therefore, power consumption) in bulk CMOS ring oscillators when operated at…”
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    Journal Article
  10. 10

    A single-event-hardened CMOS operational amplifier design by Blaine, Raymond W., Atkinson, Nicholas M., Kauppila, Jeffrey S., Armstrong, Sarah E., Holman, W. Timothy, Massengill, Lloyd W.

    “…Novel RHBD techniques are described that utilize charge sharing to mitigate voltage transients due to single event strikes in a folded cascode operational…”
    Get full text
    Conference Proceeding