Search Results - "Armstrong, B. M."

Development of a Monolithic Active Pixel Sensor Using SOI Technology With a Thick Device Layer by Marczewski, J., Grabiec, P., Kucharski, K., Tomaszewski, D., Kucewicz, W., Kusiak, T., Niemiec, H., Sapor, M., Ruddell, F.H., Armstrong, B.M., Gamble, H.S., Loster, B.W., Majewski, S.

“…Monolithic active pixel detectors fabricated in SOI (silicon on insulator) technology are novel sensors of ionizing radiation which exploit SOI substrates for…”
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Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates by McNeill, D. W., Bhattacharya, S., Wadsworth, H., Ruddell, F. H., Mitchell, S. J. N., Armstrong, B. M., Gamble, H. S.

“…Hafnium oxide films have been deposited at 250 °C on silicon and germanium substrates by atomic layer deposition (ALD), using tetrakis-ethylmethylamino hafnium…”
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Effects of tacrolimus (FK506) on human insulin gene expression, insulin mRNA levels, and insulin secretion in HIT-T15 cells by Redmon, J B, Olson, L K, Armstrong, M B, Greene, M J, Robertson, R P

“…FK506 (tacrolimus) is an immunosuppressive drug which interrupts Ca2+-calmodulin-calcineurin signaling pathways in T lymphocytes, thereby blocking antigen…”
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Investigation into the selectivity of CVD iron from Fe(CO) 5 precursor on various metal and dielectric patterned substrates by Bain, M.F., Low, Y.H., Bien, D.C.S., Montgomery, J.H., Armstrong, B.M., Gamble, H.S.

“…It has been shown that CVD iron from a Fe(CO) 5 precursor deposits selectively on dielectric surfaces over tungsten surfaces. No similar selective CVD…”
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Fermi level de-pinning of aluminium contacts to n -type germanium using thin atomic layer deposited layers by Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M., McNeill, D. W.

“…Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier…”
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SiGe HBTs on bonded SOI incorporating buried silicide layers by Bain, M., El Mubarek, H.A.W., Bonar, J.M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B.M., Hemment, P.L.F., Hall, S., Ashburn, P.

“…A technology is described for fabricating SiGe heterojunction bipolar transistors (HBTs) on wafer-bonded silicon-on-insulator (SOI) substrates that incorporate…”
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Selective deposition of CVD iron on silicon dioxide and tungsten by Low, Y.H., Bain, M.F., Bien, D.C.S., Montgomery, J.H., Armstrong, B.M., Gamble, H.S.

“…The preferential deposition of CVD iron on silicon dioxide (SiO 2) surfaces over tungsten (W) surfaces has been demonstrated. Depositions carried out on…”
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Germanium on sapphire substrates for system on a chip by Gamble, H.S., Armstrong, B.M., Baine, P.T., Low, Y.H., Rainey, P.V., Low, Y.W., McNeill, D.W., Mitchell, S.J.N., Montgomery, J.H., Ruddell, F.H.

“…Germanium on sapphire (GeOS) is proposed for system on a chip applications. Sapphire substrates are demonstrated to exhibit lower rf losses and superior…”
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Composition and stress analysis in Si structures using micro-raman spectroscopy by McCarthy, J., Perova, T. S., Moore, R. A., Bhattacharya, S., Gamble, H., Armstrong, B. M.

“…Strained silicon (Si) technology enables improvements in complementary metal oxide semiconductor (CMOS) performance and functionality via replacement of the…”
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Optimisation and scaling of interfacial GeO2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO2 by Murad, S.N.A., Baine, P.T., McNeill, D.W., Mitchell, S.J.N., Armstrong, B.M., Modreanu, M., Hughes, G., Chellappan, R.K.

“…► Scaling of thermal GeO2 thickness at 550°C using N2 dilution. ► Physical characterisation of scaled GeO2 layers. ► Fabrication and testing of high-κ gate…”
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Ultralow silicon substrate noise crosstalk using metal Faraday cages in an SOI technology by Stefanou, S., Hamel, J.S., Baine, P., Bain, M., Armstrong, B.M., Gamble, H.S., Kraft, M., Kemhadjian, H.A.

“…Ultralow substrate crosstalk is demonstrated using a novel metal Faraday cage isolation scheme in silicon-on-insulator technology. Over ten times reduction in…”
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Morphological and functional characterization of beta TC-6 cells--an insulin-secreting cell line derived from transgenic mice by Poitout, V., Stout, L. E., Armstrong, M. B., Walseth, T. F., Sorenson, R. L., Robertson, R. P.

“…Morphological and functional characterization of beta TC-6 cells--an insulin-secreting cell line derived from transgenic mice. V Poitout , L E Stout , M B…”
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Cross-talk suppression in SOI substrates by Baine, P., Jin, M., Gamble, H.S., Armstrong, B.M., Linton, D., Mohammed, F.

“…Cross-talk between the noisy digital circuitry and the highly sensitive analog circuitry of integrated “system-on-a-chip” circuits is a serious problem…”
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Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors by Gajula, D. R., McNeill, D. W., Coss, B. E., Dong, H., Jandhyala, S., Kim, J., Wallace, R. M., Armstrong, B. M.

“…In this work, nickel germanide Schottky contacts have been fabricated on n-type germanium (n-Ge) with an optimum barrier height of 0.63eV. For rapid thermal…”
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Tungsten silicide contacts to polycrystalline silicon and silicon–germanium alloys by Srinivasan, G., Bain, M.F., Bhattacharyya, S., Baine, P., Armstrong, B.M., Gamble, H.S., McNeill, D.W.

“…Silicon–germanium alloy layers will be employed in the source–drain engineering of future MOS transistors. The use of this technology offers advantages in…”
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Low-temperature plasma-enhanced chemical vapor deposition of tungsten and tungsten nitride by BAIN, M. F, ARMSTRONG, B. M, GAMBLE, H. S

“…Tungsten and tungsten nitride layers have been deposited by plasma-enhanced chemical vapor deposition (PECVD). Tungsten layers deposited at low deposition…”
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Surface electromigration in copper interconnects by McCusker, N.D, Gamble, H.S, Armstrong, B.M

“…RF-magnetron sputter deposited copper films have been characterised in terms of microstructure, stress and resistivity. The electromigration behaviour of this…”
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Electrical characterization of SOI substrates incorporating WSix ground planes by BAIN, M, JIN, M, LOH, S. H, BAINE, P, ARMSTRONG, B. M, GAMBLE, H. S, MCNEILL, D. W

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Effect of deposition temperature on the formation of CoSi2 through the rapid thermal annealing of CVD cobalt by Bain, M.F., Deo, N., Armstrong, B.M., Gamble, H.S.

“…Epitaxial CoSi2 layers were successfully produced on (100) silicon substrates by rapid thermal annealing of cobalt layer deposited by CVD. The epitaxial layer…”
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Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples by Wasyluk, J., Rainey, P. V., Perova, T. S., Mitchell, S. J. N., McNeill, D. W., Gamble, H. S., Armstrong, B. M., Hurley, R.

“…The results on structural damage in germanium wafers caused by hydrogen and helium implants of typical doses used in Smart Cut™ Technology (1–6 × 1016…”
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