Search Results - "Armbrister, V. A."

Strain-induced formation of fourfold symmetric SiGe quantum dot molecules by Zinovyev, V A, Dvurechenskii, A V, Kuchinskaya, P A, Armbrister, V A

“…The strain field distribution at the surface of a multilayer structure with disklike SiGe nanomounds formed by heteroepitaxy is exploited to arrange the…”
Get full text

Phonon bottleneck in p -type Ge/Si quantum dots by Yakimov, A. I., Kirienko, V. V., Armbrister, V. A., Bloshkin, A. A., Dvurechenskii, A. V.

“…We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type…”
Get full text

Photovoltaic Ge/SiGe quantum dot mid-infrared photodetector enhanced by surface plasmons by Yakimov, A I, Kirienko, V V, Bloshkin, A A, Armbrister, V A, Dvurechenskii, A V, Hartmann, J-M

“…We report the fabrication and characterization of a multilayer Ge quantum dot detector grown on Si xGex virtual substrate (x = 0.18) for photovoltaic mid-wave…”
Get full text

Localization of electrons in dome-shaped GeSi/Si islands by Yakimov, A. I., Kirienko, V. V., Bloshkin, A. A., Armbrister, V. A., Kuchinskaya, P. A., Dvurechenskii, A. V.

“…We report on intraband photocurrent spectroscopy of dome-shaped GeSi islands embedded in a Si matrix with n+-type bottom and top Si layers. An in-plane…”
Get full text

Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots by Yakimov, A. I., Kirienko, V. V., Armbrister, V. A., Dvurechenskii, A. V.

“…It is found that the integration of Ge/Si heterostructures containing layers of Ge quantum dots with twodimensional regular lattices of subwave holes in a gold…”
Get full text

Enhancement of the hole photocurrent in layers of Ge/Si quantum dots with abrupt heterointerfaces by Yakimov, A. I., Kirienko, V. V., Armbrister, V. A., Dvurechenskii, A. V.

“…The photoconductive gain, hole photocurrent spectra in the mid-infrared range, and band-to-band photoluminescence spectra in arrays of Ge/Si quantum dots with…”
Get full text

Resonant photoluminescence of Si layers grown on SiO2 by Shklyaev, A.A., Gulyaev, D.V., Zhuravlev, K.S., Latyshev, A.V., Armbrister, V.A., Dvurechenskii, A.V.

“…The Si layers grown on SiO2 at temperatures between 430 and 550°C and annealed at high temperatures emit a photoluminescence (PL) peak in the 1.4–1.7μm range…”
Get full text

Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy by Dvurechenskii, A.V., Smagina, J.V., Groetzschel, R., Zinovyev, V.A., Armbrister, V.A., Novikov, P.L., Teys, S.A., Gutakovskii, A.K.

“…Scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED) experiments were performed to study growth modes induced by…”
Get full text

Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation by Smagina, Zh.V., Novikov, P.L., Zinovyev, V.A., Armbrister, V.A., Teys, S.A., Dvurechenskii, A.V.

“…Joint experimental and theoretical study of low-energy ion-beam-assisted Ge growth on Si has been carried out. Pulsed ion-beam action results in the increase…”
Get full text

Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation by Smagina, J.V., Novikov, P.L., Armbrister, V.A., Zinoviev, V.A., Nenashev, A.V., Dvurechenskii, A.V.

“…Stress-induced nucleation of nanoislands under pulsed low-energy ion-beam assisted growth of Si/Ge heterostructures is studied by molecular dynamics and…”
Get full text

Electronic states in vertically ordered Ge/Si quantum dots detected by photocurrent spectroscopy by Yakimov, A. I., Kirienko, V. V., Armbrister, V. A., Bloshkin, A. A., Dvurechenskii, A. V.

“…We report on intraband photocurrent spectroscopy of sixfold stacked Ge/Si quantum dots embedded in a Si matrix and aligned along the growth direction. The dots…”
Get full text

Surface plasmon dispersion in a mid-infrared Ge/Si quantum dot photodetector coupled with a perforated gold metasurface by Yakimov, A. I., Kirienko, V. V., Armbrister, V. A., Bloshkin, A. A., Dvurechenskii, A. V.

“…The photodetection improvement previously observed in mid-infrared (IR) quantum dot photodetectors (QDIPs) coupled with periodic metal metasurfaces is usually…”
Get full text

Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior by Dabard, C., Shklyaev, A.A., Armbrister, V.A., Aseev, A.L.

“…•Dewetting behavior of Ge layers on SiO2 depends on the method of their deposition.•More stable Ge layers on SiO2 brake up into particles via liquid-state…”
Get full text

Strain-induced improvement of photoluminescence from the groups of laterally ordered SiGe quantum dots by Zinovyev, V. A., Zinovieva, A. F., Kuchinskaya, P. A., Smagina, Zh. V., Armbrister, V. A., Dvurechenskii, A. V., Borodavchenko, O. M., Zhivulko, V. D., Mudryi, A. V.

“…Photoluminescence properties of highly strained Ge/Si multi-layer heterostructures with incorporated groups of laterally ordered SiGe quantum dots are studied…”
Get full text

Strain-induced improvement of photoluminescence from the groups of laterallyordered SiGe quantum dots by Zinovyev, V A, Zinovieva, A F, Kuchinskaya, P A, Smagina Zh V, Armbrister, V A, Dvurechenskii, A V, Borodavchenko, O M, Zhivulko, V D, Mudryi, A V

“…Photoluminescenceproperties of highly strained Ge/Si multi-layer heterostructures with incorporated groups of laterallyordered SiGe quantumdots are studied in…”
Get full text

Suppression of hole relaxation in small Ge/Si quantum dots by Yakimov, A. I., Kirienko, V. V., Bloshkin, A. A., Armbrister, V. A., Dvurechenskii, A. V.

“…We study the effect of quantum dot size on the mid-infrared photocurrent, photoconductive gain, and hole capture probability in ten-period p -type Ge/Si…”
Get full text

Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots by Yakimov, A. I., Kirienko, V. V., Bloshkin, A. A., Armbrister, V. A., Dvurechenskii, A. V.

“…Electronic states in multilayer Ge/Si heterostructures with different periods of the arrangement of layers of Ge quantum dots have been studied by the…”
Get full text

Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy by Dvurechenskii, A. V., Smagina, Zh. V., Zinov’ev, V. A., Armbrister, V. A., Volodin, V. A., Efremov, M. D.

Get full text

Surface morphology of Si layers grown on SiO2 by Shklyaev, A.A., Kozhukhov, A.S., Armbrister, V.A., Gulyaev, D.V.

“…► Si crystals appear to be larger and uniform when Si is grown on SiO2 covered with an array of Ge islands. ► Si crystals grown on SiO2 have a rounded shape at…”
Get full text

Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation by Smagina, Zh. V., Dvurechenskii, A. V., Seleznev, V. A., Kuchinskaya, P. A., Armbrister, V. A., Zinovyev, V. A., Stepina, N. P., Zinovieva, A. F., Nenashev, A. V., Gutakovskii, A. K.

“…The growth of Ge nanoclusters on a prepatterned Si (100) surface formed by imprint lithography in combination with subsequent irradiation with Ge + ions is…”
Get full text