Search Results - "Arehart, A R"

Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen by Long, R D, Jackson, C M, Yang, J, Hazeghi, A, Hitzman, C, Arehart, A R, Nishi, Y, Ma, T P, Ringel, S A, McIntyre, P C

“…Three interface state density (Dit) characterization methods to evaluate the oxide-semiconductor interface on metal-oxide-semiconductor capacitors fabricated…”
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Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy by Zhang, Z., Arehart, A. R., Kyle, E. C. H., Chen, J., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Speck, J. S., Ringel, S. A.

“…The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical…”
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Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy by Zhang, Z., Farzana, E., Arehart, A. R., Ringel, S. A.

“…Deep level optical spectroscopy (DLOS) and deep level transient spectroscopy (DLTS) measurements performed on Ni/β-Ga2O3 Schottky diodes fabricated on…”
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Impact of carbon on trap states in n -type GaN grown by metalorganic chemical vapor deposition by Armstrong, A., Arehart, A. R., Moran, B., DenBaars, S. P., Mishra, U. K., Speck, J. S., Ringel, S. A.

“…The effect of excess C incorporation on the deep level spectrum of n-type GaN grown by metalorganic chemical vapor deposition was investigated. Low-pressure…”
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Impact of proton irradiation on deep level states in n-GaN by Zhang, Z., Arehart, A. R., Cinkilic, E., Chen, J., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., McSkimming, B., Speck, J. S., Ringel, S. A.

“…Deep levels in 1.8 MeV proton irradiated n-type GaN were systematically characterized using deep level transient spectroscopies and deep level optical…”
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Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy by Sasikumar, A., Arehart, A. R., Martin-Horcajo, S., Romero, M. F., Pei, Y., Brown, D., Recht, F., di Forte-Poisson, M. A., Calle, F., Tadjer, M. J., Keller, S., DenBaars, S. P., Mishra, U. K., Ringel, S. A.

“…Traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors (HEMTs) are identified and compared using constant drain-current deep level transient…”
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Erratum: “Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy” [Appl. Phys. Lett. 108, 052105 (2016)] by Zhang, Z., Farzana, E., Arehart, A. R., Ringel, S. A.

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Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing by Gleason, D. A., Galiano, K., Brown, J. L., Hilton, A. M., Ringel, S. A., Arehart, A. R., Heller, E. R., Dorsey, D. L., Pelz, J. P.

“…Scanning probe deep-level transient spectroscopy (SP-DLTS) is applied to cross-sectioned, fully processed, commercially sourced AlGaN/GaN Schottky barrier…”
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Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy by Arehart, A. R., Corrion, A., Poblenz, C., Speck, J. S., Mishra, U. K., Ringel, S. A.

“…The incorporation of deep level defects in n-type GaN grown by ammonia-based molecular beam epitaxy (MBE) is studied via systematic adjustment of the NH3/Ga…”
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Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy by Hierro, A., Arehart, A. R., Heying, B., Hansen, M., Mishra, U. K., DenBaars, S. P., Speck, J. S., Ringel, S. A.

“…The effect of growth regime on the deep level spectrum of n-GaN using molecular-beam epitaxy (MBE) was investigated. As the Ga/N flux ratio was decreased…”
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Correlation of a generation-recombination center with a deep level trap in GaN by Nguyen, X. S., Lin, K., Zhang, Z., McSkimming, B., Arehart, A. R., Speck, J. S., Ringel, S. A., Fitzgerald, E. A., Chua, S. J.

“…We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire,…”
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Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor by Cardwell, D. W., Arehart, A. R., Poblenz, C., Pei, Y., Speck, J. S., Mishra, U. K., Ringel, S. A., Pelz, J. P.

“…Fast, bias-induced, surface potential transients (SPTs) and conductance transients (CTs) were simultaneously measured on an AlGaN/GaN high electron mobility…”
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Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy by Zhang, Z., Hurni, C. A., Arehart, A. R., Yang, J., Myers, R. C., Speck, J. S., Ringel, S. A.

“…Deep level defects in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy were characterized using deep level transient spectroscopy (DLTS) and…”
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Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy by Arehart, A. R., Homan, T., Wong, M. H., Poblenz, C., Speck, J. S., Ringel, S. A.

“…Deep levels in N-face and Ga-face n-type GaN grown by plasma-assisted molecular beam epitaxy were detected, analyzed and compared using deep level optical…”
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Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy by Nguyen, X. S., Hou, H. W., De Mierry, P., Vennéguès, P., Tendille, F., Arehart, A. R., Ringel, S. A., Fitzgerald, E. A., Chua, S. J.

“…Deep level traps in the low dislocation density, 5.1 × 107 cm−2, semi‐polar GaN (11–22), grown on patterned sapphire substrate was characterized for the first…”
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Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy by Zhang, Z., Hurni, C. A., Arehart, A. R., Speck, J. S., Ringel, S. A.

“…Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) were utilized to investigate the behavior of deep states in m-plane, n-type…”
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Capture Kinetics of Electron Traps in MBE-Grown n-GaN by Hierro, A., Arehart, A.R., Heying, B., Hansen, M., Speck, J.S., Mishra, U.K., DenBaars, S.P., Ringel, S.A.

“…The carrier capture kinetics of the Ec—0.59 eV and Ec—0.91 eV electron traps found in molecular beam epitaxy (MBE)‐grown n‐GaN have been determined by means of…”
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Publisher’s Note: “Correlation of a generation-recombination center with a deep level trap in GaN” [Appl. Phys. Lett. 106 , 102101 (2015)] by Nguyen, X. S., Lin, K., Zhang, Z., McSkimming, B., Arehart, A. R., Speck, J. S., Ringel, S. A., Fitzgerald, E. A., Chua, S. J.

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Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs by Sasikumar, A., Arehart, A.R., Cardwell, D.W., Jackson, C.M., Sun, W., Zhang, Z., Ringel, S.A.

“…Identification and characterization of a single, deep trap causing large increases in the on-resistance of GaN-on-Si power metal-insulator-semiconductor-high…”
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Impact of the Ga/In ratio on defects in Cu(In, Ga)Se2 by Paul, P. K., Aryal, K., Marsillac, S., Ringel, S. A., Arehart, A. R.

“…The impact of the composition of a 3-stage-process deposited CIGS on the deep level spectrum was investigated using deep level transient and optical…”
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