Search Results - "Ardaravičius, L."

Descriptive model of the transition from superconducting to normal state in thin high quality YBaCuO films by nanosecond electrical pulses by Kiprijanovič, O., Ardaravičius, L.

“…•Propagation of normal (N) zone in thin superconducting (S) YBaCuO films is modeled.•An unstable border between the N and S state strongly influences on the…”
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Detailed look into the unstable S-N border during propagation of the N-zone into the thin YBaCuO film by Ardaravičius, L, Kiprijanovič, O

“…The focus is on the initial processes which change the shape of the bending S-N border during pulsed electrical S-N switching of thin YBaCuO films. These…”
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Hot-Phonon Decided Carrier Velocity in AlInN/GaN Based Two-Dimensional Channels by Ardaravičius, L., Kiprijanovič, O., Liberis, J.

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The Electric Field and Temperature Dependence of Conductance of Two-Dimensional Electron Gas in AlGaN/AlN/GaN by Ardaravičius, L., Kiprijanovič, O., Liberis, J.

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Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN by Ardaravicˇius, L., Liberis, J., Kiprijanovicˇ, O., Matulionis, A., Wu, M., Morkoç, H.

“…A nanosecond‐pulsed current–voltage technique was applied to study hot‐electron transport along the two‐dimensional electron gas channel confined at a…”
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High frequency noise of epitaxial graphene grown on sapphire by Ardaravicˇius, L., Liberis, J., Šermukšnis, E., Matulionis, A., Hwang, J., Kwak, J. Y., Campbell, D., Alsalman, H. A., Eastman, L. F., Spencer, M. G.

“…Microwave noise technique is applied to study in‐plane electronic properties of epitaxial graphene grown on sapphire by chemical vapor deposition and subjected…”
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Electron drift velocity in AlGaN/GaN channel at high electric fields by Ardaravičius, L., Matulionis, A., Liberis, J., Kiprijanovic, O., Ramonas, M., Eastman, L. F., Shealy, J. R., Vertiatchikh, A.

“…Current–voltage characteristics of a nominally undoped AlGaN/GaN two-dimensional electron gas channel is measured at a room temperature, and electron drift…”
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Window for better reliability of nitride heterostructure field effect transistors by Matulionis, A., Liberis, J., Šermukšnis, E., Ardaravičius, L., Šimukovič, A., Kayis, C., Zhu, C.Y., Ferreyra, R., Avrutin, V., Özgür, Ü., Morkoç, H.

“…Phase-noise technique was applied to monitor channel degradation of nitride heterostructure field effect transistors (HFETs) subjected to a fixed drain voltage…”
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Comparative analysis of hot-electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channels by Ardaravičius, L., Ramonas, M., Kiprijanovic, O., Liberis, J., Matulionis, A., Eastman, L. F., Shealy, J. R., Chen, X., Sun, Y. J.

“…Nanosecond‐pulsed current–voltage measurements were used to study hot‐electron transport in undoped AlGaN/GaN and AlGaN/AlN/GaN two‐dimensional electron gas…”
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Hot-electron transport in 4H-SiC by Ardaravičius, L., Matulionis, A., Kiprijanovic, O., Liberis, J., Cha, H.-Y., Eastman, L. F., Spencer, M. G.

“…Nanosecond-pulsed technique is used to study hot-electron transport in donor-doped 4H-SiC ( n = 2 × 10 17 cm − 3 ) biased parallel to the basal plane. The…”
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Self-heating and microwave noise in AlGaN/GaN by Ardaravičius, L., Liberis, J., Matulionis, A., Eastman, L. F., Shealy, J. R., Vertiatchikh, A.

“…Equivalent noise temperature and spectral intensity of current fluctuations at 10 GHz frequency are investigated for Al0.15Ga0.85N/GaN channels. Dependence on…”
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Influence of low-field-mobility-related issues on SiC metal-semiconductor field-effect transistor performance by Cha, Ho-Young, Choi, Y. C., Eastman, L. F., Spencer, M. G., Ardaravicius, L., Matulionis, A., Kiprijanovic, O.

“…High field-dependent electron transport characteristics in 4H-SiC were measured successfully using a nanosecond-pulsed technique. It should be noted that the…”
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Fast and Ultrafast Processes in AlGaN/GaN Channels by Matulionis, A., Liberis, J., Ardaravičius, L., Ramonas, M., Zubkutė, T., Matulionienė, I., Eastman, L.F., Shealy, J.R., Smart, J., Pavlidis, D., Hubbard, S.

“…Extrapolated experimental dependence of electron energy relaxation time is used to treat hot‐electron sharing by the adjacent Al0.15Ga0.85N and GaN layers in…”
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High-field electron transport in bulk ZnO by Ardaravičius, L, Liberis, J, Ramonas, M, Šermukšnis, E, Matulionis, A, Toporkov, M, Avrutin, V, Özgür, Ü, Morkoç, H

“…Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short…”
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Influence of low-field-mobility-related issues on SiC metal-semiconductor field-effect transistor performance: Special issue on SiC and the group III nitride semiconductors by CHA, Ho-Young, CHOI, Y. C, EASTMAN, L. F, SPENCER, M. G, ARDARAVICIUS, L, MATULIONIS, A, KIPRIJANOVIC, O

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