Search Results - "Arapov, Yu.G."

Temperature dependence of the electron quantum lifetime in InGaAs/GaAs double quantum well: Fukuyama-Abrahams mechanism by Gudina, S.V., Arapov, Yu.G., Neverov, V.N., Savelyev, A.P., Sandakov, N.S., Shelushinina, N.G., Yakunin, M.V.

“…In the n-InGaAs/GaAs double quantum well, the suppression of resonant resistance by an in-plane magnetic field B ≤ 9 T in the temperature range T = (1.8–70) K…”
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Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells by Gudina, S.V., Arapov, Yu.G., Neverov, V.N., Savelyev, A.P., Podgornykh, S.M., Shelushinina, N.G., Yakunin, M.V.

“…We report on experimental study of quantum conductivity corrections for two-dimensional electron gas in GaAs/InGaAs/GaAs single and double quantum wells in a…”
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The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination by Arapov, Yu. G., Gudina, S. V., Klepikova, A. S., Neverov, V. N., Harus, G. I., Shelushinina, N. G., Yakunin, M. V.

“…The dependences of the longitudinal and Hall resistances on a magnetic field in n -InGaAs/GaAs heterostructures with a single and double quantum wells after…”
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Effect of impurity potential range on a scaling behavior in the quantum Hall regime by Arapov, Yu.G., Harus, G.I., Karskanov, I.V., Neverov, V.N., Shelushinina, N.G., Yakunin, M.V.

“…Qualitatively different temperature dependences of quantum Hall transition width are observed for heterostructures with short-range (InGaAs/GaAs) or smooth…”
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Parallel magnetic field-induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes by Yakunin, M.V., Alshanskii, G.A., Arapov, Yu.G., Harus, G.I., Neverov, V.N., Shelushinina, N.G., Kuznetsov, O.A., Zvonkov, B.N., Uskova, E.A., Ponomarenko, L., deVisser, A.

“…In In x Ga 1− x As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields…”
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