Search Results - "Arapov, Yu. G"

Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures by Gudina, S. V., Arapov, Yu. G., Ilchenko, E. I., Neverov, V. N., Savelyev, A. P., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Vasil’evskii, I. S., Vinichenko, A. N.

“…The longitudinal ρ xx and Hall ρ xy resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic…”
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Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure by Arapov, Yu. G., Gudina, S. V., Neverov, V. N., Podgornykh, S. M., Popov, M. R., Harus, G. I., Shelushinina, N. G., Yakunin, M. V., Dvoretsky, S. A., Mikhailov, N. N.

“…We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields B up to 9 T and temperatures T = ( 2.9 ÷ 50 )  K for the…”
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Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum by Arapov, Yu. G., Gudina, S. V., Neverov, V. N., Podgornykh, S. M., Popov, M. R., Harus, G. I., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.

“…The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is d = 20.3 nm) are…”
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Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures by Gudina, S. V., Arapov, Yu. G., Ilchenko, E. V., Neverov, V. N., Savelyev, A. P., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Vasil’evskii, I. S., Vinichenko, A. N.

“…The name of the third author should read E. V. Ilchenko…”
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The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination by Arapov, Yu. G., Gudina, S. V., Klepikova, A. S., Neverov, V. N., Harus, G. I., Shelushinina, N. G., Yakunin, M. V.

“…The dependences of the longitudinal and Hall resistances on a magnetic field in n -InGaAs/GaAs heterostructures with a single and double quantum wells after…”
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Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells by Arapov, Yu. G., Gudina, S. V., Klepikova, A. S., Neverov, V. N., Shelushinina, N. G., Yakunin, M. V.

“…The dependences of the longitudinal and Hall resistances on a magnetic field in the integer quantum Hall effect regime in n -InGaAs/GaAs heterostructures with…”
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Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures by Arapov, Yu. G., Gudina, S. V., Klepikova, A. S., Neverov, V. N., Novokshonov, S. G., Kharus, G. I., Shelushinina, N. G., Yakunin, M. V.

“…The longitudinal ρ xx ( B ) and Hall ρ xy ( B ) magnetoresistances are investigated experimentally in the integer quantum Hall effect (QHE) regime in n…”
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Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells by Arapov, Yu. G., Gudina, S. V., Klepikova, A. S., Neverov, V. N., Podgornykh, S. M., Yakunin, M. V., Zvonkov, B. N.

“…The effects of tunneling between two parallel two-dimensional electron gases in n -InGaAs/GaAs nanostructures with strongly coupled double quantum wells with a…”
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Effect of impurity potential range on a scaling behavior in the quantum Hall regime by Arapov, Yu.G., Harus, G.I., Karskanov, I.V., Neverov, V.N., Shelushinina, N.G., Yakunin, M.V.

“…Qualitatively different temperature dependences of quantum Hall transition width are observed for heterostructures with short-range (InGaAs/GaAs) or smooth…”
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Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs by Gudina, S V, Arapov, Yu G, Saveliev, A P, Neverov, V N, Podgornykh, S M, Shelushinina, N G, Yakunin, M V, I. S. Vasil’evskii, Vinichenko, A N

“…The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T =…”
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Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures by Gudina, S. V., Arapov, Yu. G., Saveliev, A. P., Neverov, V. N., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Vasil’evskii, I. S., Vinichenko, A. N.

“…The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n -InGaAs/InAlAs heterostructures at temperatures of T =…”
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Temperature dependence of the electron quantum lifetime in InGaAs/GaAs double quantum well: Fukuyama-Abrahams mechanism by Gudina, S.V., Arapov, Yu.G., Neverov, V.N., Savelyev, A.P., Sandakov, N.S., Shelushinina, N.G., Yakunin, M.V.

“…In the n-InGaAs/GaAs double quantum well, the suppression of resonant resistance by an in-plane magnetic field B ≤ 9 T in the temperature range T = (1.8–70) K…”
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Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime by Gudina, S. V, Arapov, Yu. G, Neverov, V. N, Savelyev, A. P, Podgonykh, S. M, Shelushinina, N. G, Yakunin, M. V

“…We report an experimental study of quantum conductivity corrections for two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum wells in a…”
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Galvanomagnetic study of the quantum-well valence band of germanium in the Ge1−xSix/Ge/Ge1−xSix potential well by Yakunin, M. V., Al’shanskii, G. A., Arapov, Yu. G., Neverov, V. N., Harus, G. I., Shelushinina, N. G., Kuznetsov, O. A., de Visser, A., Ponomarenko, L.

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Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells by Gudina, S.V., Arapov, Yu.G., Neverov, V.N., Savelyev, A.P., Podgornykh, S.M., Shelushinina, N.G., Yakunin, M.V.

“…We report on experimental study of quantum conductivity corrections for two-dimensional electron gas in GaAs/InGaAs/GaAs single and double quantum wells in a…”
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Waveguide measuring methods for the complex dielectric constant of semiconductors at shf by Arapov, Yu. G., Davydov, A. B.

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Waveguide methods of measuring complex dielectric constant of semiconductors at SHF by Arapov, Yu. G., Davydov, A. B.

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Transport properties of two-dimensional hole gas in a Ge{sub 1-x}Si{sub x}/Ge/Ge{sub 1-x}Si{sub x} quantum well in the vicinity of metal-insulator transition by Arapov, Yu. G., Neverov, V. N., Harus, G. I., Shelushinina, N. G., Yakunin, M. V., Gudina, S. V., Karskanov, I. V., Kuznetsov, O. A., Visser, A. de, Ponomarenko, L.

“…Observation of a low-temperature transition from metallic ({partial_derivative}{rho}/{partial_derivative}T > 0) to insulator…”
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Transport properties of two-dimensional hole gas in a Ge1−x Si x /Ge/Ge1−x Si x quantum well in the vicinity of metal-insulator transition by Arapov, Yu. G., Neverov, V. N., Harus, G. I., Shelushinina, N. G., Yakunin, M. V., Gudina, S. V., Karskanov, I. V., Kuznetsov, O. A., de Visser, A., Ponomarenko, L.

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Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure by Gudina, S. V, Arapov, Yu. G, Neverov, V. N, Novik, E. G, Podgornykh, S. M, Popov, M. R, Ilchenko, E. V, Shelushinina, N. G, Yakunin, M. V, Mikhailov, N. N, Dvoretsky, S. A

“…We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH)…”
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